Abstract: Apparatus and techniques herein related battery plates. For example, a first battery plate can include a conductive silicon wafer. A first mechanical support can be located on a first side of the conductive silicon wafer. A first active material can be adhered to the first mechanical support and the first side of the conductive silicon wafer, the first active material having a first polarity. In an example, the battery plate can be a bipolar plate, such as having a second mechanical support located on a second side of the conductive silicon wafer opposite the first side, and a second active material adhered to the second mechanical support and the second side of the conductive silicon wafer, the second material having an opposite second polarity.

Abstract: Apparatus and techniques herein related battery plates. For example, a first battery plate can include a conductive silicon wafer. A first mechanical support can be located on a first side of the conductive silicon wafer. A first active material can be adhered to the first mechanical support and the first side of the conductive silicon wafer, the first active material having a first polarity. In an example, the battery plate can be a bipolar plate, such as having a second mechanical support located on a second side of the conductive silicon wafer opposite the first side, and a second active material adhered to the second mechanical support and the second side of the conductive silicon wafer, the second material having an opposite second polarity.

Abstract: Methods for forming thin dielectric films by selectively depositing a conformal film of dielectric material on a high aspect ratio structure have uses in semiconductor processing and other applications. A method for forming a dielectric film involves providing in a deposition reaction chamber a substrate having a gap on the surface. The gap has a top opening and a surface area comprising a bottom and sidewalls running from the top to the bottom. A conformal silicon oxide-based dielectric film is selectively deposited in the gap by first preferentially applying a film formation catalyst or a catalyst precursor on a portion representing less than all of the gap surface area. The substrate surface is then exposed to a silicon-containing precursor gas such that a silicon oxide-based dielectric film layer is preferentially formed on the portion of the gap surface area.

Abstract: A deposition method modulates the reaction rate and thickness of highly conformal dielectric films deposited by forming a saturated catalytic layer on the surface and then exposing the surface to silicon-containing precursor gas and a reaction modulator, which may accelerate or quench the reaction. The modulator may be added before, after, or during exposure of the silicon-containing precursor gas. The film thickness after one cycle of deposition may be increased up to 20 times or decreased up to 20 times.

Abstract: Methods for forming thin dielectric films by selectively depositing a conformal film of dielectric material on a high aspect ratio structure have uses in semiconductor processing and other applications. A method for forming a dielectric film involves providing in a deposition reaction chamber a substrate having a gap on the surface. The gap has a top opening and a surface area comprising a bottom and sidewalls running from the top to the bottom. A conformal silicon oxide-based dielectric film is selectively deposited in the gap by first preferentially applying a film formation catalyst or a catalyst precursor on a portion representing less than all of the gap surface area. The substrate surface is then exposed to a silicon-containing precursor gas such that a silicon oxide-based dielectric film layer is preferentially formed on the portion of the gap surface area.