Abstract: A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a zone of weakness is present to define a useful layer to be transferred, molecularly bonding at a bonding interface the surface of the useful layer of the donor wafer to a surface of the receptor wafer to form a structure, heating the structure at a first temperature that is substantially higher than ambient temperature for a first time period sufficient to liberate water molecules from the bonding interface, with the heating being insufficient to cause detachment of the useful layer at the zone of weakness, and detaching the useful layer from the donor wafer.

Abstract: A method for preparing an oxidized surface of a first wafer for bonding with a second wafer. The method includes treating the oxidized surface with a solution of NH4OH/H2O2 at treatment parameters sufficient to etch about 10 ? to about 120 ? from the wafer surface, followed by treating the etched surface with hydrochloric acid species at a temperature below about 50° C. for a duration of less than about 10 minutes to remove isolated particles from the oxidized surface. This method cleans the wafer surface without increasing roughness or creating rough patches thereon, and thus provides a cleaned surface capable of providing an increased bonding energy between the first and second wafers when those surfaces are bonded together. This cleaning process is advantageously used in a thin layer removal process to fabricate a semiconductor on insulator structure.

Abstract: A method for bonding semiconductor structures together is described. The technique includes providing a bonding surface on each of two semiconductor structures, brushing a bonding surface of at least one of the structures to remove contaminants and to activate hydroxyl groups on the bonding surface to enhance hydrophilicity and to facilitate molecular bonding of the structures, and joining the bonding surfaces together by molecular bonding to form a composite structure.

Abstract: A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a zone of weakness is present to define a useful layer to be transferred, molecularly bonding at a bonding interface the surface of the useful layer of the donor wafer to a surface of the receptor wafer to form a structure, heating the structure at a first temperature that is substantially higher than ambient temperature for a first time period sufficient to liberate water molecules from the bonding interface, with the heating being insufficient to cause detachment of the useful layer at the zone of weakness, and detaching the useful layer from the donor wafer.

Abstract: A method for preparing an oxidized surface of a first wafer for bonding with a second wafer. The method includes treating the oxidized surface with a solution of NH4OH/H2O2 at treatment parameters sufficient to etch about 10 ? to about 120 ? from the wafer surface, followed by treating the etched surface with hydrochloric acid species at a temperature below about 50° C. for a duration of less than about 10 minutes to remove isolated particles from the oxidized surface. This method cleans the wafer surface without increasing roughness or creating rough patches thereon, and thus provides a cleaned surface capable of providing an increased bonding energy between the first and second wafers when those surfaces are bonded together. This cleaning process is advantageously used in a thin layer removal process to fabricate a semiconductor on insulator structure.

Abstract: A method for preparing a bonding surface of a semiconductor layer of a wafer is described. The method includes treating the bonding surface to oxidize contaminants, and then cleaning the bonding surface to remove essentially all remaining contaminants. Ozone is then used to oxidize the bonding surface to improve the hydrophilic properties of the bonding surface. In an implementation, two wafers are prepared and then bonded together to form a structure.

Abstract: A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a zone of weakness is present to define a useful layer to be transferred, molecularly bonding at a bonding interface the surface of the useful layer of the donor wafer to a surface of the receptor wafer to form a structure, heating the structure at a first temperature that is substantially higher than ambient temperature for a first time period sufficient to liberate water molecules from the bonding interface, with the heating being insufficient to cause detachment of the useful layer at the zone of weakness, and detaching the useful layer from the donor wafer.

Abstract: A method for preparing an oxidized surface of a first wafer for bonding with a second wafer. The method includes treating the oxidized surface using a mix of NH4OH/H2O2 to increase the bonding energy between the first and second wafers. The treatment parameters are chosen such that etching occurs that is sufficient to remove isolated particles from the oxidized surface, but that is sufficiently weak to smooth the surface without creating rough patches thereon. Also described is a thin layer removal process, which may advantageously be used to fabricate a semiconductor on insulator structure.

Abstract: A method for bonding semiconductor structures together is described. The technique includes providing a bonding surface on each of two semiconductor structures, brushing a bonding surface of at least one of the structures to remove contaminants and to activate hydroxyl groups on the bonding surface to enhance hydrophilicity and to facilitate molecular bonding of the structures, and joining the bonding surfaces together by molecular bonding to form a composite structure.

Abstract: A method for preparing a bonding surface of a semiconductor layer of a wafer is described. The method includes treating the bonding surface to oxidize contaminants, and then cleaning the bonding surface to remove essentially all remaining contaminants. Ozone is then used to oxidize the bonding surface to improve the hydrophilic properties of the bonding surface. In an implementation, two wafers are prepared and then bonded together to form a structure.

Abstract: A method and a device for producing an adhesive surface on a substrate which can be bonded to another substrate. In an implementation, the technique includes treating the surface of the substrate by wet chemical etching to remove an oxide layer and to provide a hydrophobic surface, and exposing the etched hydrophobic surface to a gaseous ozone atmosphere to provide a dry hydrophilic surface. A device for producing an adhesive surface on a substrate according to an implementation includes a bath with an etchant for removing an oxide layer from the surface of the substrate and to produce a hydrophobic surface, and a container having an inner volume that surrounds the bath. The inner volume also includes a gaseous ozone atmosphere to produce a dry hydrophilic surface.