Patents by Inventor Corley B. Wooldridge

Corley B. Wooldridge has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of erasing flash memory with pre-programming memory cells only in the presence of a cell leakage
    Patent number: 7554852
    Abstract: Some embodiments include converting a plurality of memory cells into a first logic state, and converting the plurality of memory cells into a second logic state only if a leakage occurs after the plurality of memory cells are converted into the first logic state. Other embodiments including additional apparatus, systems, and methods are disclosed.
    Type: Grant
    Filed: May 30, 2007
    Date of Patent: June 30, 2009
    Assignee: Micron Technology, Inc.
    Inventor: Corley B. Wooldridge
  • Method of converting contents of flash memory cells in the presence of leakage
    Patent number: 7233525
    Abstract: An erase operation in a flash memory device includes applying an erase pulse to memory cells of the flash memory device to convert the contents of the memory cells into logic 1 bits before any pre-programming operation is performed.
    Type: Grant
    Filed: August 29, 2005
    Date of Patent: June 19, 2007
    Assignee: Micron Technology, Inc.
    Inventor: Corley B. Wooldridge
  • Flash memory device with a variable erase pulse
    Patent number: 7167399
    Abstract: A method of operating a flash memory device according to an embodiment of the present invention includes selecting a flash cell in a flash memory device to undergo an erase, applying a long erase pulse to the flash cell, and reading the flash cell. For each time the flash cell is read and is not in an erased state, the method includes applying a short erase pulse to the flash cell, counting the short erase pulse, and reading the flash cell. Finally, a length of the long erase pulse is adjusted based on the counted number of short erase pulses that were applied to the flash cell. The length of the long erase pulse may be increased if the counted number of short erase pulses is more than a high number of pulses, or it may be decreased if the counted number of short erase pulses is less than a low number of pulses.
    Type: Grant
    Filed: March 22, 2005
    Date of Patent: January 23, 2007
    Assignee: Micron Technology, Inc.
    Inventor: Corley B. Wooldridge
  • Faster method of erasing flash memory
    Patent number: 7061811
    Abstract: An erase operation in a flash memory device includes applying an erase pulse to memory cells of the flash memory device to convert the contents of the memory cells into logic 1 bits before any pre-programming operation is performed.
    Type: Grant
    Filed: August 29, 2005
    Date of Patent: June 13, 2006
    Assignee: Micron Technology, Inc.
    Inventor: Corley B. Wooldridge
  • Erasing flash memory without pre-programming the flash memory before erasing
    Patent number: 7061810
    Abstract: An erase operation in a flash memory device includes applying an erase pulse to memory cells of the flash memory device to convert the contents of the memory cells into logic 1 bits before any pre-programming operation is performed.
    Type: Grant
    Filed: October 9, 2001
    Date of Patent: June 13, 2006
    Assignee: Micron Technology, Inc.
    Inventor: Corley B. Wooldridge
  • Flash memory device with a variable erase pulse
    Patent number: 6903974
    Abstract: A method of operating a flash memory device according to an embodiment of the present invention includes selecting a flash cell in a flash memory device to undergo an erase, applying a long erase pulse to the flash cell, and reading the flash cell. For each time the flash cell is read and is not in an erased state, the method includes applying a short erase pulse to the flash cell, counting the short erase pulse, and reading the flash cell. Finally, a length of the long erase pulse is adjusted based on the counted number of short erase pulses that were applied to the flash cell. The length of the long erase pulse may be increased if the counted number of short erase pulses is more than a high number of pulses, or it may be decreased if the counted number of short erase pulses is less than a low number of pulses.
    Type: Grant
    Filed: January 28, 2003
    Date of Patent: June 7, 2005
    Assignee: Micron Technology Inc.
    Inventor: Corley B. Wooldridge
  • Flash memory device with a variable erase pulse
    Publication number: 20030112671
    Abstract: A method of operating a flash memory device according to an embodiment of the present invention includes selecting a flash cell in a flash memory device to undergo an erase, applying a long erase pulse to the flash cell, and reading the flash cell. For each time the flash cell is read and is not in an erased state, the method includes applying a short erase pulse to the flash cell, counting the short erase pulse, and reading the flash cell. Finally, a length of the long erase pulse is adjusted based on the counted number of short erase pulses that were applied to the flash cell. The length of the long erase pulse may be increased if the counted number of short erase pulses is more than a high number of pulses, or it may be decreased if the counted number of short erase pulses is less than a low number of pulses.
    Type: Application
    Filed: January 28, 2003
    Publication date: June 19, 2003
    Applicant: Micron Technology, Inc.
    Inventor: Corley B. Wooldridge
  • Faster method of erasing flash memory
    Publication number: 20030067809
    Abstract: An erase operation in a flash memory device includes applying an erase pulse to memory cells of the flash memory device to convert the contents of the memory cells into logic 1 bits before any pre-programming operation is performed.
    Type: Application
    Filed: October 9, 2001
    Publication date: April 10, 2003
    Applicant: Micron Technology, Inc.
    Inventor: Corley B. Wooldridge
  • Flash memory device with a variable erase pulse
    Patent number: 6515909
    Abstract: A method of operating a flash memory device according to an embodiment of the present invention includes selecting a flash cell in a flash memory device to undergo an erase, applying a long erase pulse to the flash cell, and reading the flash cell. For each time the flash cell is read and is not in an erased state, the method includes applying a short erase pulse to the flash cell, counting the short erase pulse, and reading the flash cell. Finally, a length of the long erase pulse is adjusted based on the counted number of short erase pulses that were applied to the flash cell. The length of the long erase pulse may be increased if the counted number of short erase pulses is more than a high number of pulses, or it may be decreased if the counted number of short erase pulses is less than a low number of pulses.
    Type: Grant
    Filed: October 5, 2001
    Date of Patent: February 4, 2003
    Assignee: Micron Technology Inc.
    Inventor: Corley B. Wooldridge