Abstract: Metal patterns (11, 11′, 11″) can be provided on a glass substrate (1) in an electroless process by modifying the substrate with a silane monolayer (3), nucleating said momolayer with a polymer-stabilized Pd sol (5) and, subsequently, locally removing the Pd nuclei and silane layer (9, 9′) with a pulsed laser. Neither a photoresist nor organic solvents are used. The method can very suitably be used for the manufacture of the black matrix on a faceplate of display devices, such as the passive plate for an LCD.

Abstract: In order to prevent impurities, in particular a chlorine impurity, present in the wall of the vessel from diffusing into the interior of the vessel and there disturb the growth process of the crystal, a hollow member, in particular a tube (1), of quartz is provided on its inside with a coating of silicon dioxide, while argon, gaseous silane and a gaseous oxidant, for example, dinitrogen oxide and/or carbon dioxide are introduced into the hollow member heated at 250.degree. to 350.degree. C. and are converted by means of a microwave resonator (2) into a porous coating of silicon dioxide at a pressure between 20 and 30 mbar, which coating is sintered to form a coating which is preferably at least 50 .mu.m thick.

Abstract: A method of manufacturing a semiconductor device in which a monocrystalline material is epitaxially grown on a disc-shaped monocrystalline substrate. The substrate is placed in an elongate reactor and a gas flow in the longitudinal direction is passed over the substrate while a temperature gradient is maintained in the gas flow. The gas flow initially contains the reaction components in equilibrium with the material to be grown, and the gas flow becomes supersaturated with respect to the material to be grown as the temperature gradient is traversed. If the temperature gradient is selected so that the gas flow becomes undersaturated with respect to the material to be grown, etching will take place.