Abstract: A ceramic body of a dielectric material on the basis of barium titanate comprises 0.2 to 0.5 atom % of antimony and/or cerium as the donor material. The grain size of the dielectric material is less than 2 .mu.m. The dielectric constant of the material exceeds 3500 and the material has a high electric resistance which is maintained at a high temperature and for a long period of time. The ceramic material is suitable for use in capacitors, in particular ultilayer capacitors.

Abstract: In a multilayer capacitor, which is made of alternate layers of a dielectric oxidic ceramic material and an electrode material, and which is provided with metallic end contacts which electrically conductively contact a prescribed part of the layers of electrode material via an intermediate layer of a conductive metal oxide, the metallic end contacts containing silver, the diffusion of silver from the end contacts to the layers of electrode material is suppressed effectively in that the electrode material consists of palladium with 1 to 10% by weight of lead. On account of this, the end contacts can be readily manufactured from a paste, and delamination, cracking and the formation of cavities in the vicinity of the end contacts are suppressed.

Abstract: In a multilayer capacitor, which is made of alternate layers 1 of a dielectric oxidic ceramic material and an electrode material 2, and which is provided with metallic end contacts 4 which electrically conductively contact a prescribed part of the layers of electrode material via an intermediate layer 3 of a conductive metal oxide, the metallic end contacts containing silver, the diffusion of silver from the end contacts to the layers of electrode material is suppressed effectively in that the intermediate layer is a heterogeneous layer which, apart from the conductive metal oxide, contains glass particles, and in that the heterogeneous layer has a thickness of at least 1 .mu.m. On account of this, the end contacts can readily be manufactured from a paste, and delamination, cracking and the formation of cavities in the viscinity of the end contacts are suppressed.

Abstract: A chip resistor having a value ranging from 10 Ohm to 100 kOhm and having a low temperature coefficient a low noise level and a high stability. The resistor is manufactured by means of the thin-fil technique. For this purpose, an NiCrAl-resistance layer is applied to one side of a flat ceramic support, and contact strips of Ni or an Ni-alloy, possibly preceded by an intermediate layer, are provided at two ends of the said support. An insulating lacquer layer is then applied to the resistance layer and partly overlaps the contact strips. The solderable supply strips are provided on the exposed metal portions.