Patents by Inventor Cornelius A. van der Jeugd
Cornelius A. van der Jeugd has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10343907Abstract: In some embodiments, a system is disclosed for delivering hydrogen peroxide to a semiconductor processing chamber. The system includes a process canister for holding a H2O2/H2O mixture in a liquid state, an evaporator provided with an evaporator heater, a first feed line for feeding the liquid H2O2/H2O mixture to the evaporator, and a second feed line for feeding the evaporated H2O2/H2O mixture to the processing chamber, the second feed line provided with a second feed line heater. The evaporator heater is configured to heat the evaporator to a temperature lower than 120° C. and the second feed line heater is configured to heat the feed line to a temperature equal to or higher than the temperature of the evaporator.Type: GrantFiled: March 17, 2015Date of Patent: July 9, 2019Assignee: ASM IP Holding B.V.Inventors: Bert Jongbloed, Dieter Pierreux, Cornelius A. van der Jeugd, Lucian Jdira, Radko G. Bankras, Theodorus G. M. Oosterlaken
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Patent number: 9837271Abstract: In some embodiments, silicon-filled openings are formed having no or a low occurrence of voids in the silicon fill, while maintaining a smooth exposed silicon surface. In some embodiments, an opening in a substrate may be filled with silicon, such as amorphous silicon. The deposited silicon may have interior voids. This deposited silicon is then exposed to a silicon mobility inhibitor, such as an oxygen-containing species and/or a semiconductor dopant. The deposited silicon fill is subsequently annealed. After the anneal, the voids may be reduced in size and, in some embodiments, this reduction in size may occur to such an extent that the voids are eliminated.Type: GrantFiled: November 13, 2015Date of Patent: December 5, 2017Assignee: ASM IP HOLDING B.V.Inventors: Steven R. A. Van Aerde, Cornelius A. van der Jeugd, Theodorus G. M. Oosterlaken, Frank Huussen
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Patent number: 9552979Abstract: A process for depositing aluminum nitride is disclosed. The process comprises providing a plurality of semiconductor substrates in a batch process chamber and depositing an aluminum nitride layer on the substrates by performing a plurality of deposition cycles without exposing the substrates to plasma during the deposition cycles. Each deposition cycle comprises flowing an aluminum precursor pulse into the batch process chamber, removing the aluminum precursor from the batch process chamber, and removing the nitrogen precursor from the batch process chamber after flowing the nitrogen precursor and before flowing another pulse of the aluminum precursor. The process chamber may be a hot wall process chamber and the deposition may occur at a deposition pressure of less than 1 Torr.Type: GrantFiled: May 31, 2013Date of Patent: January 24, 2017Assignee: ASM IP HOLDING B.V.Inventors: Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Peter Zagwijn, Hessel Sprey, Cornelius A. van der Jeugd, Marinus Josephus de Blank, Robin Roelofs, Qi Xie, Jan Willem Maes
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Publication number: 20170011910Abstract: In some embodiments, a reactive curing process may be performed by exposing a semiconductor substrate in a process chamber to an ambient containing hydrogen peroxide, with the pressure in the process chamber at about 300 Torr or less. In some embodiments, the residence time of hydrogen peroxide molecules in the process chamber is about five minutes or less. The curing process temperature may be set at about 500° C. or less. The curing process may be applied to cure flowable dielectric materials and may provide highly uniform curing results, such as across a batch of semiconductor substrates cured in a batch process chamber.Type: ApplicationFiled: August 18, 2016Publication date: January 12, 2017Inventors: Bert Jongbloed, Dieter Pierreux, Cornelius A. van der Jeugd, Herbert Terhorst, Lucian Jdira, Radko G. Bankras, Theodorus G.M. Oosterlaken
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Patent number: 9443730Abstract: In some embodiments, silicon-filled openings are formed having no or a low occurrence of voids in the silicon fill, while maintaining a smooth exposed silicon surface. In some embodiments, an opening in a substrate may be filled with silicon, such as amorphous silicon. The deposited silicon may have interior voids. This deposited silicon is then exposed to a silicon mobility inhibitor, such as an oxygen-containing species and/or a semiconductor dopant. The deposited silicon fill is subsequently annealed. After the anneal, the voids may be reduced in size and, in some embodiments, this reduction in size may occur to such an extent that the voids are eliminated.Type: GrantFiled: July 18, 2014Date of Patent: September 13, 2016Assignee: ASM IP Holding B.V.Inventors: Steven R. A. Van Aerde, Cornelius A. van der Jeugd, Theodorus G. M. Oosterlaken
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Patent number: 9431238Abstract: In some embodiments, a reactive curing process may be performed by exposing a semiconductor substrate in a process chamber to an ambient containing hydrogen peroxide, with the pressure in the process chamber at about 300 Torr or less. In some embodiments, the residence time of hydrogen peroxide molecules in the process chamber is about five minutes or less. The curing process temperature may be set at about 500° C. or less. The curing process may be applied to cure flowable dielectric materials and may provide highly uniform curing results, such as across a batch of semiconductor substrates cured in a batch process chamber.Type: GrantFiled: May 21, 2015Date of Patent: August 30, 2016Assignee: ASM IP HOLDING B.V.Inventors: Bert Jongbloed, Dieter Pierreux, Cornelius A. van der Jeugd, Herbert Terhorst, Lucian Jdira, Radko G. Bankras, Theodorus G. M. Oosterlaken
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Publication number: 20160240373Abstract: In some embodiments, an oxide layer is grown on a semiconductor substrate by oxidizing the semiconductor substrate by exposure to hydrogen peroxide at a process temperature of about 500° C. or less. The exposure to the hydrogen peroxide may continue until the oxide layer grows by a thickness of about 1 ? or more. Where the substrate is a germanium substrate, while oxidation using H2O has been found to form germanium oxide with densities of about 4.25 g/cm3, oxidation according to some embodiments can form an oxide layer with a density of about 6 g/cm3 or more (for example, about 6.27 g/cm3). In some embodiments, another layer of material is deposited directly on the oxide layer. For example, a dielectric layer may be deposited directly on the oxide layer.Type: ApplicationFiled: February 12, 2015Publication date: August 18, 2016Inventors: Fu Tang, Michael Givens, Qi Xie, Jan Willem Maes, Bert Jongbloed, Radko G. Bankras, Theodorus G.M. Oosterlaken, Dieter Pierreux, Werner Knaepen, Harald B. Profijt, Cornelius A. van der Jeugd
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Publication number: 20160141176Abstract: In some embodiments, silicon-filled openings are formed having no or a low occurrence of voids in the silicon fill, while maintaining a smooth exposed silicon surface. In some embodiments, an opening in a substrate may be filled with silicon, such as amorphous silicon. The deposited silicon may have interior voids. This deposited silicon is then exposed to a silicon mobility inhibitor, such as an oxygen-containing species and/or a semiconductor dopant. The deposited silicon fill is subsequently annealed. After the anneal, the voids may be reduced in size and, in some embodiments, this reduction in size may occur to such an extent that the voids are eliminated.Type: ApplicationFiled: November 13, 2015Publication date: May 19, 2016Inventors: Steven R.A. Van Aerde, Cornelius A. van der Jeugd, Theodorus G.M. Oosterlaken, Frank Huussen
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Publication number: 20160020094Abstract: In some embodiments, silicon-filled openings are formed having no or a low occurrence of voids in the silicon fill, while maintaining a smooth exposed silicon surface. In some embodiments, an opening in a substrate may be filled with silicon, such as amorphous silicon. The deposited silicon may have interior voids. This deposited silicon is then exposed to a silicon mobility inhibitor, such as an oxygen-containing species and/or a semiconductor dopant. The deposited silicon fill is subsequently annealed. After the anneal, the voids may be reduced in size and, in some embodiments, this reduction in size may occur to such an extent that the voids are eliminated.Type: ApplicationFiled: November 26, 2014Publication date: January 21, 2016Inventors: Steven R.A. Van Aerde, Cornelius A. van der Jeugd, Theodorus G.M. Oosterlaken
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Publication number: 20160020093Abstract: In some embodiments, silicon-filled openings are formed having no or a low occurrence of voids in the silicon fill, while maintaining a smooth exposed silicon surface. In some embodiments, an opening in a substrate may be filled with silicon, such as amorphous silicon. The deposited silicon may have interior voids. This deposited silicon is then exposed to a silicon mobility inhibitor, such as an oxygen-containing species and/or a semiconductor dopant. The deposited silicon fill is subsequently annealed. After the anneal, the voids may be reduced in size and, in some embodiments, this reduction in size may occur to such an extent that the voids are eliminated.Type: ApplicationFiled: July 18, 2014Publication date: January 21, 2016Inventors: Steven R.A. Van Aerde, Cornelius A. van der Jeugd, Theodorus G.M. Oosterlaken
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Publication number: 20150357184Abstract: In some embodiments, a reactive curing process may be performed by exposing a semiconductor substrate in a process chamber to an ambient containing hydrogen peroxide, with the pressure in the process chamber at about 300 Torr or less. In some embodiments, the residence time of hydrogen peroxide molecules in the process chamber is about five minutes or less. The curing process temperature may be set at about 500° C. or less. The curing process may be applied to cure flowable dielectric materials and may provide highly uniform curing results, such as across a batch of semiconductor substrates cured in a batch process chamber.Type: ApplicationFiled: May 21, 2015Publication date: December 10, 2015Inventors: Bert Jongbloed, Dieter Pierreux, Cornelius A. van der Jeugd, Herbert Terhorst, Lucian Jdira, Radko G. Bankras, Theodorus G.M. Oosterlaken
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Publication number: 20150279693Abstract: In some embodiments, a system is disclosed for delivering hydrogen peroxide to a semiconductor processing chamber. The system includes a process canister for holding a H2O2/H2O mixture in a liquid state, an evaporator provided with an evaporator heater, a first feed line for feeding the liquid H2O2/H2O mixture to the evaporator, and a second feed line for feeding the evaporated H2O2/H2O mixture to the processing chamber, the second feed line provided with a second feed line heater. The evaporator heater is configured to heat the evaporator to a temperature lower than 120° C. and the second feed line heater is configured to heat the feed line to a temperature equal to or higher than the temperature of the evaporator.Type: ApplicationFiled: March 17, 2015Publication date: October 1, 2015Inventors: Bert JONGBLOED, Dieter PIERREUX, Cornelius A. van der JEUGD, Lucian JDIRA, Radko G. BANKRAS, Theodorus G.M. OOSTERLAKEN
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Publication number: 20140357090Abstract: A process for depositing aluminum nitride is disclosed. The process comprises providing a plurality of semiconductor substrates in a batch process chamber and depositing an aluminum nitride layer on the substrates by performing a plurality of deposition cycles without exposing the substrates to plasma during the deposition cycles. Each deposition cycle comprises flowing an aluminum precursor pulse into the batch process chamber, removing the aluminum precursor from the batch process chamber, and removing the nitrogen precursor from the batch process chamber after flowing the nitrogen precursor and before flowing another pulse of the aluminum precursor. The process chamber may be a hot wall process chamber and the deposition may occur at a deposition pressure of less than 1 Torr.Type: ApplicationFiled: May 31, 2013Publication date: December 4, 2014Inventors: Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Peter Zagwijn, Hessel Sprey, Cornelius A. van der Jeugd, Marinus Josephus de Blank, Robin Roelofs, Qi Xie, Jan Willem Maes
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Patent number: 7691750Abstract: A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.Type: GrantFiled: November 9, 2006Date of Patent: April 6, 2010Assignee: ASM International N.V.Inventors: Ernest H. A. Granneman, Vladimir Kuznetsov, Xavier Pages, Cornelius A. van der Jeugd
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Patent number: 7655093Abstract: A wafer support system comprising a susceptor having top and bottom sections and gas flow passages therethrough. One or more spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer.Type: GrantFiled: January 29, 2007Date of Patent: February 2, 2010Assignee: ASM America, Inc.Inventors: Michael W. Halpin, Mark R. Hawkins, Derrick W. Foster, Robert M. Vyne, John F. Wengert, Cornelius A. van der Jeugd, Loren R. Jacobs, Frank B. M. Van Bilsen, Matthew Goodman, Hartmann Glenn, Jason M. Layton
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Patent number: 7645486Abstract: The invention relates to a of manufacturing a silicon dioxide layer of low roughness, that includes depositing a layer of silicon dioxide over a substrate by a low pressure chemical vapor deposition (LPCVD) process, the deposition process employing simultaneously a flow of tetraethylorthosilicate (TEOS) as the source material for the film deposition and a flow of a diluant gas that it not reactive with TEOS, so that the diluant gas/TEOS flow ratio is between 0.5 and 100; and annealing the silicon dioxide layer at a temperature between 600° C. and 1200° C., for a duration between 10 minutes and 6 hours.Type: GrantFiled: February 22, 2007Date of Patent: January 12, 2010Assignees: S.O.I. Tec Silicon on Insulator Technologies, ASM International N.V.Inventors: Konstantin Bourdelle, Nicolas Daval, Ian Cayrefourcq, Steven R. A. Van Aerde, Marinus J. M. De Blank, Cornelius A. Van Der Jeugd
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Patent number: 7629270Abstract: A nitrogen precursor that has been activated by exposure to a remotely excited species is used as a reactant to form nitrogen-containing layers. The remotely excited species can be, e.g., N2, Ar, and/or He, which has been excited in a microwave radical generator. Downstream of the microwave radical generator and upstream of the substrate, the flow of excited species is mixed with a flow of NH3. The excited species activates the NH3. The substrate is exposed to both the activated NH3 and the excited species. The substrate can also be exposed to a precursor of another species to form a compound layer in a chemical vapor deposition. In addition, already-deposited layers can be nitrided by exposure to the activated NH3 and to the excited species, which results in higher levels of nitrogen incorporation than plasma nitridation using excited N2 alone, or thermal nitridation using NH3 alone, with the same process temperatures and nitridation durations.Type: GrantFiled: August 24, 2005Date of Patent: December 8, 2009Assignee: ASM America, Inc.Inventors: Johan Swerts, Hilde De Witte, Jan Willem Maes, Christophe F. Pomarede, Ruben Haverkort, Yuet Mei Wan, Marinus J. De Blank, Cornelius A. Van Der Jeugd, Jacobus Johannes Beulens
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Patent number: 7294582Abstract: Sequential processes are conducted in a batch reaction chamber to form ultra high quality silicon-containing compound layers, e.g., silicon nitride layers, at low temperatures. Under reaction rate limited conditions, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. Trisilane flow is interrupted. A silicon nitride layer is then formed by nitriding the silicon layer with nitrogen radicals, such as by pulsing the plasma power (remote or in situ) on after a trisilane step. The nitrogen radical supply is stopped. Optionally non-activated ammonia is also supplied, continuously or intermittently. If desired, the process is repeated for greater thickness, purging the reactor after each trisilane and silicon compounding step to avoid gas phase reactions, with each cycle producing about 5-7 angstroms of silicon nitride.Type: GrantFiled: August 25, 2005Date of Patent: November 13, 2007Assignee: ASM International, N.V.Inventors: Ruben Haverkort, Yuet Mei Wan, Marinus J. De Blank, Cornelius A. van der Jeugd, Jacobus Johannes Beulens, Michael A. Todd, Keith D. Weeks, Christian J. Werkhoven, Christophe F. Pomarede
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Publication number: 20070134887Abstract: The invention relates to a of manufacturing a silicon dioxide layer of low roughness, that includes depositing a layer of silicon dioxide over a substrate by a low pressure chemical vapour deposition (LPCVD) process, the deposition process employing simultaneously a flow of tetraethylorthosilicate (TEOS) as the source material for the film deposition and a flow of a diluant gas that it not reactive with TEOS, so that the diluant gas/TEOS flow ratio is between 0.5 and 100; and annealing the silicon dioxide layer at a temperature between 600° C. and 1200° C., for a duration between 10 minutes and 6 hours.Type: ApplicationFiled: February 22, 2007Publication date: June 14, 2007Inventors: Konstantin Bourdelle, Nicolas Daval, Ian Cayrefourcq, Steven Van Aerde, Marinus De Blank, Cornelius Van Der Jeugd
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Publication number: 20070131173Abstract: A wafer support system comprising a susceptor having top and bottom sections and gas flow passages therethrough. One or more spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer.Type: ApplicationFiled: January 29, 2007Publication date: June 14, 2007Applicant: ASM AMERICA, INC.Inventors: Michael Halpin, Mark Hawkins, Derrick Foster, Robert Vyne, John Wengert, Cornelius van der Jeugd, Loren Jacobs, Frank Van Bilsen, Matthew Goodman, Hartmann Glenn, Jason Layton