Patents by Inventor Court Skinner

Court Skinner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of providing lower contact resistance in MOS transistors
    Patent number: 5312766
    Abstract: Germanium is used to significantly enhance the drift mobilities of minority carriers in the channels of N-channel and P-channel metal-oxide-semiconductor (MOS) transistors with silicon substrates. Germanium processing is also used to enhance the source/drain contact conductance for MOS devices. Methods are disclosed for forming the germanium-rich interfacial layer utilizing a germanium implant and wet oxidation or growing a silicon-germanium alloy by molecular beam epitaxy.
    Type: Grant
    Filed: February 7, 1992
    Date of Patent: May 17, 1994
    Assignee: National Semiconductor Corporation
    Inventors: Sheldon Aronowitz, Courtney Hart, Court Skinner
  • Method of providing lower contact resistance in MOS transistor structures
    Patent number: 5296386
    Abstract: Germanium is used to significantly enhance the drift mobilities of minority carriers in the channels of N-channel and P-channel metal-oxide-semiconductor (MOS) transistors with silicon substrates. Germanium processing is also used to enhance the source/drain contact conductance for MOS devices. Methods are disclosed for forming the germanium-rich interfacial layer utilizing a germanium implant and wet oxidation or growing a silicon-germanium alloy by molecular beam epitaxy.
    Type: Grant
    Filed: March 6, 1991
    Date of Patent: March 22, 1994
    Assignee: National Semiconductor Corporation
    Inventors: Sheldon Aronowitz, Courtney Hart, Court Skinner