Abstract: The present invention relates generally to a deposition apparatus for semiconductor processing. More specifically, embodiments of the present invention relate to a gas manifold valve cluster and deposition apparatus. In some embodiments of the present invention a gas manifold valve cluster and system are provided that promotes reduced length and volumes of gas lines that will be exposed to atmosphere during cleaning which minimizes the time required to perform process chamber maintenance and therefore increase the productivity of the process chamber. In other embodiments a gas manifold valve cluster and ALD deposition apparatus are provided.

Abstract: The present invention relates generally to a deposition apparatus for semiconductor processing. More specifically, embodiments of the present invention relate to a deposition apparatus having a reduced reaction zone volume. In some embodiments a deposition apparatus is provided with a process chamber having a raised reaction zone. Other embodiments of the present invention provide a deposition apparatus with a process chamber having a vertical baffle ring. Embodiments of the present invention provide a reduced reaction zone or volume which promotes uniform gas flow pattern and faster gas exchange.

Abstract: Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.

Abstract: Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.

Abstract: A method of making high-k dielectrics is provided. The method comprises providing a substrate having a high-k dielectric layer deposited thereon in a process chamber and introducing a nitrogen containing gas into the process chamber to incorporate nitrogen into the high-k dielectric layer. In one embodiment, the nitrogen containing gas is a nitrogen plasma gas from a source disposed outside the process chamber. The nitrogen plasma gas is introduced into the process chamber at a flow rate from 0 to about 5000 sccm over a time period of about 20 to 1800 seconds. In another embodiment, the process chamber is maintained at a pressure of about 1 to 100 Torr, and at a wafer temperature in the range of about 200° C.-700° C. The high-k dielectric film pre-deposited on the substrate can be formed by atomic layer deposition, chemical vapor deposition (CVD), physical vapor deposition (PVD), jet vapor deposition (JVD), aerosol pyrolysis, and spin-coating.

Abstract: Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.

Abstract: A heat exchanger apparatus including a heat exchange element and a substrate support. A clamp member is coupled to the heat exchange element and the substrate support by expanding the clamp member to an expanded state sufficient to surround a portion of the substrate support and the heat exchange element, and contracting the clamp member to couple the clamp member to the substrate support.

Abstract: A heat exchanger apparatus including a heat exchange element and a substrate support. A clamp member is coupled to the heat exchange element and the substrate support by expanding the clamp member to an expanded state sufficient to surround a portion of the substrate support and the heat exchange element, and contracting the clamp member to couple the clamp member to the substrate support.

Abstract: Disclosed is a method of making an anodized aluminum susceptor capable of withstanding an elevated temperature of 590° C., or a temperature as high as 475° C. in the presence of an NF3 plasma, without peeling or cracking, which preferably comprises selecting a high purity or low magnesium aluminum alloy, roughening the surface of the alloy, and then anodizing the surface roughened alloy in an electrolyte comprising an organic acid to form the desired anodized aluminum oxide coating thereon. Further, the invention comprises a high purity or low magnesium aluminum alloy susceptor and an organic acid anodic coating thereon highly resistant to spalling or cracking at elevated temperatures.

Abstract: A heat exchanger apparatus including a heat exchange element and a substrate support. A clamp member is coupled to the heat exchange element and the substrate support by expanding the clamp member to an expanded state sufficient to surround a portion of the substrate support and the heat exchange element, and contracting the clamp member to couple the clamp member to the substrate support.

Abstract: The present invention provides an apparatus and methods for controlling gas pressure within a semiconductor process chamber. The apparatus comprises a throttle valve 32 positioned downstream of the process chamber outlet for controlling gas flow therethrough. The throttle valve includes a valve body 41 having a through-hole and a plug 44 movably disposed within the valve body for controlling gas flow through the through-hole. The throttle valve incorporates an abrasive element 86 disposed within the valve body in abrading contact with an exposed surface 89 of the plug. The abrasive element effectively removes gas deposited onto the exposed surface of the valve plug during operation of the throttle valve.

Abstract: Non-bonded ceramic protection is provided for metal surfaces in a plasma processing chamber, particularly heated metal electrode surfaces, in a plasma processing chamber, to prevent or inhibit attack of the heated metal surfaces by chemically aggressive species generated in the plasma during processing of materials, without bonding the ceramic material to the metal surface. In accordance with the invention the ceramic protection material comprises a thin cover material which is fitted closely, but not bonded, to the heated metal. This form of ceramic protection is particularly useful for protecting the surfaces of glow discharge electrodes and gas distribution apparatus in plasma process chambers used for processing semiconductor substrates to form integrated circuit structures.

Abstract: We have discovered that corrosion of an aluminum article (such as a susceptor) exposed to corrosive halogen-containing species within semiconductor processing apparatus can be avoided by fabricating the article from a high purity aluminum-magnesium alloy having an optimum magnesium content. Upon exposure of the article to a halogen-containing species, a protective magnesium halide layer is formed upon or beneath the surface of the article. The protective layer prevents halogens from penetrating to the base aluminum, thereby protecting the article from corrosion and cracking. To protect the magnesium halide layer from abrasion, the article preferably also includes a hard, cohesive coating over the magnesium halide layer. A preferred cohesive coating is aluminum oxide or aluminum nitride. The magnesium content of the aluminum article, to enable formation of a magnesium halide layer, should be in the range of about 0.1% to about 6% by weight, depending on the operational temperature of the article.

Abstract: Corrosion of an aluminum article exposed to corrosive halogen-containing species within semiconductor processing apparatus is avoided by fabricating the aluminum article from a high purity aluminum-magnesium alloy having a magnesium content of about 0.1% to 1.5% by weight, either throughout the entire article or at least in the surface region which is to be rendered corrosion-resistant, and a mobile impurity atom content of less than 0.2% by weight. Upon exposure of the article to a halogen-containing species, a protective magnesium halide layer is formed beneath the surface of the article. The protective layer prevents halogens from penetrating to the base aluminum, thereby protecting the article from corrosion and cracking. To protect the magnesium layer from abrasion, the article preferably also includes a hard, cohesive coating over the magnesium halide layer. A preferred cohesive coating is aluminum oxide or aluminum nitride.

Abstract: Anodized aluminum coatings employed in semiconductor processing equipment are treated to reduce their sensitivity to halogenated species. The pores of the aluminum oxide surface can be filled either by a metal, such as magnesium or aluminum, forming the corresponding metal oxide that is resistant to reaction with halogens, or by filling the pores with a getter for halogens, such as hydrogen ions. The hydrogen ions adsorbed on the surface of the aluminum oxide react with halogens to form volatile hydrogen halides that can be pumped away in the exhaust system of the semiconductor processing chambers, thereby preventing or reducing reaction of the underlying aluminum oxide with the halogens.

Abstract: Non-bonded ceramic protection is provided for metal surfaces in a plasma processing chamber, particularly heated metal electrode surfaces, in a plasma processing chamber, to prevent or inhibit attack of the heated metal surfaces by chemically aggressive species generated in the plasma during processing of materials, without bonding the ceramic material to the metal surface. In accordance with the invention the ceramic protection material comprises a thin cover material which is fitted closely, but not bonded, to the heated metal. This form of ceramic protection is particularly useful for protecting the surfaces of glow discharge electrodes and gas distribution apparatus in plasma process chambers used for processing semiconductor substrates to form integrated circuit structures.

Abstract: A susceptor or other semiconductor wafer processing and/or transfer support platform includes a surface pattern having two or more regions of high and low elevation. The regions of high and low elevations can be rectangular/square dimpled patterns having tops coplanar with one another to support a semiconductor wafer for processing. The high and low regions can also be a wave form appearing to emanate from a point, where each of the wave crests form an imaginary plane on which a wafer to be processed can rest. The combination of high and low regions increases the average spacing between the wafer and the susceptor and reduces or eliminates the capacitive coupling (or sticking force) between processing hardware and a substrate (wafer) created by electrical fields during processing. The dimpled patterns are created by machining and can be created by using chemical and electrochemical etching of the wafer handling surfaces of processing hardware pieces.

Abstract: A slotted conical (non-flat) spring washer with an encircling ring provides improved spring washer performance. A split or slotted conical spring washer is encircled by a retaining ring that prevents the ends of the washer adjacent to the slot from expanding as the washer is compressed. The ends of the washer on both sides of the slot move to prevent the washer material from exceeding its yield strength. The ring restricts the radial movement of said outside diameter of the washer strip away from a center axis of the washer bore. The ring can be a counter bore in a member to be clamped, a retaining washer having an outside annular washer to act as the ring, or can be integral with the spring washer such that the slot appears not to pass completely through the washer strip.This slotted conical spring washer greatly increases the elastic spring travel available during repeated clamping cycles and during movement of clamped members due to differences in rates of thermal expansion and thermal gradients.

Abstract: A corrosion-resistant protective coating on an aluminum substrate capable of withstanding corrosion attack by process halogen gases and plasmas is disclosed. The protective coating is formed by contacting an aluminum oxide layer on an aluminum substrate with one or more fluorine-containing gases at an elevated temperature. In a preferred embodiment, a high purity corrosion-resistant protective coating on an aluminum substrate capable of withstanding corrosion attack may be formed by first forming a high purity aluminum oxide layer on the aluminum substrate and then contacting the aluminum oxide layer with one or more high purity fluorine-containing gases at an elevated temperature to form the high purity corrosion resistant protective coating thereon.

Abstract: A corrosion-resistant protective coating on an aluminum substrate capable of withstanding corrosion attack by process halogen gases and plasmas is disclosed. The protective coating is formed by contacting an aluminum oxide layer on an aluminum substrate with one or more fluorine-containing gases at an elevated temperature. In a preferred embodiment, a high purity corrosion-resistant protective coating on an aluminum substrate capable of withstanding corrosion attack may be formed by first forming a high purity aluminum oxide layer on the aluminum substrate and then contacting the aluminum oxide layer with one or more high purity fluorine-containing gases at an elevated temperature to form the high purity corrosion resistant protective coating theron.