Abstract: There is disclosed a method of manufacturing of optical devices, for example, semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and the like. There is further disclosed Optoelectronic Integrated Circuits (OEICs) and Photonic Integrated Circuits (PICs) including such devices. According to the present invention there is provided a method of manufacturing an optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum Well Intermixing (QWI) structure (30), the method including the step of plasma etching at least part of a surface of the device body portion (5) prior to depositing a dielectric layer (51) thereon so as to introduce structural defects at least into a portion (53) of the device body portion (5) adjacent the dielectric layer (51). The structural defects substantially comprise “point” defects.

Abstract: There is disclosed an improved optical device (110), such as a laser, modulator, amplifier, switch, ore the like. The invention provides an optically active device (110) comprising: an optically active region (150) having an input/output end (165); and an optically passive region (155, 160) extending from said input/output end (165, 170) of the optically active region (150) to an input/output end (175, 180) of the device (110).

Abstract: A method of manufacturing an optical device, wherein the device body portion from which the device is to be made includes at least one Quantum Well, the method including the step of causing an impurity material including copper to intermix with the Quantum Well.

Abstract: There is disclosed an improved laser device (10), comprising a semiconductor laser diode. The invention provides laser device (10) comprising: at least two lasing regions (12,14); an interference region (16) into which an output of each lasing region (12,14) is coupled; and an output region (118) extending from the interference region (116) to an output (20) of the device (10).

Abstract: There is disclosed an improved semiconductor laser device (10;10a), eg a single mode index guided laser diode. The device (10;10a) comprises: an optical waveguide (15;15a); at least one electrical contact (20;20a) extending along part of a length of the waveguide (15;15a); and wherein the at least one electrical contact (20;20a) is shorter than the optical waveguide (15;15a). By this arrangement a part or parts of the waveguide (15;15a) are not electrically pumped, in use.

Abstract: There is disclosed an improved optical device (10;10a), eg comprising a semiconductor optically active or optoelectronic devices such as lasers, modulators, amplifiers, switching structures, or the like, mounted on a heatsink (28;28a) The invention provides an optically active device (10;10a) comprising a device body (12;12a) having an active region (14;14a) and an optically passive region(s) (20;22) provided at one or more ends (24,26;26a) of the active region (14;14a); and a heatsink (28;28a); the device body (12;12a) and heatsink (28;28a) being retained in thermal association with one another such that a first end of the at least one of the optically passive region(s) (20,22;22a) adjacent an end of the active region (14;14a) is provided within an area of the heatsink (28;28a), and a second end of the said at least one optically passive region(s) (20,22;22a) is provided outwith the area of the heatsink (28;28a).

Abstract: There is disclosed an improved method of manufacturing of an optical device (40), particularly semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and optical detectors. The invention provides a method of manufacturing optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum Well (QW) structure (30), the method including the step of: processing the device body portion (15) so as to create extended defects at least in a portion (53) of the device portion (5). Each extended defect is a structural defect comprising a plurality of adjacent “point” defects.

Abstract: There is disclosed an improved method of manufacturing an optical device using impurity induced Quantum Well Intermixing (QWI) process.

Abstract: There is disclosed an improved semiconductor laser device (10). Previous high power (greater than a few hundred milliwatts output) semiconductor lasers suffer from a number of problems such as poor beam quality and low brightness. The invention therefore provides a semiconductor laser device (10) including at least one portion which has been Quantum Well Intermixed (QWI) and means for providing gain profiling within an active portion of the device (10). In a preferred implementation the device (10) provides a Wide Optical Waveguide (WOW).

Abstract: There is disclosed an improved method of manufacturing of an optical device (40), particularly semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and optical detectors. The invention provides a method of manufacturing optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum Well (QW) structure (30), the method including the step of: processing the device body portion (15) so as to create extended defects at least in a portion (53) of the device portion (5). Each extended defect is a structural defect comprising a plurality of adjacent “point” defects.

Abstract: There is disclosed a method of manufacturing of optical devices, for example, semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and the like. There is further disclosed Optoelectronic Integrated Circuits (OEICs) and Photonic Integrated Circuits (PICs) including such devices. According to the present invention there is provided a method of manufacturing an optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum Well Intermixing (QWI) structure (30), the method including the step of depositing a dielectric layer (51) on at least part of a surface of the device body portion (5) so as to introduce structural defects at least into a portion (53) of the device body portion (5) adjacent the dielectric layer (51). The structural defects substantially comprise “point” defects.

Abstract: There is disclosed an improved semiconductor laser device (10;10a), eg a single mode index guided laser diode. The device (10;10a) comprises: an optical waveguide (15;15a); at least one electrical contact (20;20a) extending along part of a length of the waveguide (15;15a); and wherein the at least one electrical contact (20;20a) is shorter than the optical waveguide (15;15a). By this arrangement a part or parts of the waveguide (15;15a) are not electrically pumped, in use.

Abstract: There is disclosed an improved optical device (110), such as a laser, modulator, amplifier, switch, or the like. The invention provides an optically active device (110) comprising: an optically active region (150) having an input/output end (165); and an optically passive region (155,160) extending from said input/output end (165,170) of the optically active region (150) to an input/output end (175,180) of the device (110).

Abstract: There is disclosed an improved laser device (10), comprising a semiconductor laser diode. The invention provides laser device (10) comprising: at least two lasing regions (12,14); an interference region (16) into which an output of each lasing region (12,14) is coupled; and an output region (118) extending from the interference region (116) to an output (20) of the device (10).

Abstract: There is disclosed an improved optical device (10;10a), eg comprising a semiconductor optically active or optoelectronic devices such as lasers, modulators, amplifiers, switching structures, or the like, mounted on a heatsink (28;28a) The invention provides an optically active device (10;10a) comprising a device body (12;12a) having an active region (14;14a) and an optically passive region(s) (20;22) provided at one or more ends (24,26;26a) of the active region (14;14a); and a heatsink (28;28a); the device body (12;12a) and heatsink (28;28a) being retained in thermal association with one another such that a first end of the at least one of the optically passive region(s) (20,22;22a) adjacent an end of the active region (14;14a) is provided within an area of the heatsink (28;28a), and a second end of the said at least one optically passive region(s) (20,22;22a) is provided outwith the area of the heatsink (28;28a).