Abstract: The invention comprises a butyl acetate-silicone formulation comprising (A) an organopolysiloxane containing an average of at least two silicon-bonded alkenyl groups per molecule, (B) an organosilicon compound containing an average of at least two silicon-bonded hydrogen atoms per molecule; (C) a hydrosilylation catalyst; and a coating effective amount of (D) butyl acetate. The invention also comprises related silicone formulations made by removing a portion, or all, of (D) butyl acetate therefrom, and related cured products, methods, articles and devices.

Abstract: Methods for fabrication of thermal interposers, using a low stress photopatternable silicone are provided, for use in production of electronic products that feed into packaging of LEDs, logic and memory devices and other such semiconductor products where thermal management is desired. A photopatternable silicone composition, thermally conductive material and a low melting point compliant solder form a complete semiconductor package module. The photopatternable silicone is applied on a surface of a wafer and selectively radiated to form openings which provided user defined bondline thickness control. The openings are then filled with high conductivity pastes to form high conductivity thermal links. A low melting point curable solder is then applied where the solder wets the silicone as well as the thermally conductive path that leads to low thermal contact resistance between the structured z-axis thermal interposer and the heat sink and/or substrate which can be a wafer or PCB.

Abstract: A method of treating the surface of a semiconductor wafer through the formation of a bonding system is provided in order to enhance the handling of the wafer during subsequent processing operations. The method generally comprises the steps of applying a release layer and an adhesive to different wafers; bonding the wafers together to form a bonded wafer system; performing at least one wafer processing operation (e.g., wafer grinding, etc.) to form a thin processed wafer; debonding the wafers; and then cleaning the surface of the processed wafer with an organic solvent that is capable of dissolving the release layer or any residue thereof. The adhesive includes a vinyl-functionalized polysiloxane oligomeric resin, a Si—H functional polysiloxane oligomeric resin, a catalyst, and optionally an inhibitor, while the release layer is comprised of either a silsesquioxane-based resin or a thermoplastic resin.

Abstract: A method of treating the surface of a semiconductor wafer through the formation of a bonding system is provided in order to enhance the handling of the wafer during subsequent processing operations. The method generally comprises the steps of applying a release layer and an adhesive to different wafers; bonding the wafers together to form a bonded wafer system; performing at least one wafer processing operation (e.g., wafer grinding, etc.) to form a thin processed wafer; debonding the wafers; and then cleaning the surface of the processed wafer with an organic solvent that is capable of dissolving the release layer or any residue thereof. The adhesive includes a vinyl-functionalized polysiloxane oligomeric resin, a Si—H functional polysiloxane oligomeric resin, a catalyst, and optionally an inhibitor, while the release layer is comprised of either a silsesquioxane-based resin or a thermoplastic resin.