Abstract: An embodiment provides a method, including: receiving, from a device, a user identification; storing, in a storage device, first data produced by first free-form user input specifying one or more regions of an image and second data comprising second free-form user input describing the one or more regions of the image; each first data having corresponding second data stored in association therewith; selecting, using a processor, a data set comprising at least a portion of the first data and the second data based at least in part on the user identification; and providing the selected data set for display. Other embodiments are described and claimed.

Abstract: A femoral hip prosthesis has a body having a body lateral face, a body medial face, a body front face and a body rear face. A stem extends longitudinally from a lower end of the body along a central stem axis. A neck extends from an upper end of the body along a central neck axis inclined at an obtuse angle to the central stem axis. The body lateral face is provided with a series of longitudinally spaced lateral face teeth transversely extending between the body front face and body rear face. Each of the lateral face teeth has an upper face inclined with respect to an adjacent tangent of the body lateral face by between 60 and 120 degrees.

Abstract: A low standby current power-on reset circuit is described. A first NMOS transistor's drain is coupled to a first PMOS transistor's drain; source coupled to ground line; and gate coupled to a first capacitor coupled to ground line. The first PMOS transistor's source is coupled to power line; gate coupled to second capacitor coupled to ground line; and drain provides a power-on reset indication. A second PMOS transistor's source is coupled to power line; drain is coupled to drain of second NMOS transistor, gates of first PMOS, second PMOS, and second NMOS transistors, and second capacitor. The second NMOS transistor's source is coupled to gate of first NMOS transistor and first capacitor. A discharge circuit is coupled to power line, ground line, and first and second capacitors for discharging the capacitors when a voltage on power line drops below a level determined by the second PMOS transistor's threshold voltage.

Abstract: A low standby current power-on reset circuit is described. A first NMOS transistor's drain is coupled to a first PMOS transistor's drain; source coupled to ground line; and gate coupled to a first capacitor coupled to ground line. The first PMOS transistor's source is coupled to power line; gate coupled to second capacitor coupled to ground line; and drain provides a power-on reset indication. A second PMOS transistor's source is coupled to power line; drain is coupled to drain of second NMOS transistor, gates of first PMOS, second PMOS, and second NMOS transistors, and second capacitor. The second NMOS transistor's source is coupled to gate of first NMOS transistor and first capacitor. A discharge circuit is coupled to power line, ground line, and first and second capacitors for discharging the capacitors when a voltage on power line drops below a level determined by the second PMOS transistor's threshold voltage.

Abstract: A content addressable memory cell 920 includes a first storage element 922a for storing information and a first transistor 921a for selectively transferring charge representing information from a first bitline 924a to the first storage element 922a. A second transistor 921b selectively transfers charge representing information from a second bitline 924b to a second storage element 922b. First and second comparelines 925a, 925b carry first and second bits of a comparand to a comparator 905, 906, 908 which compares the first and second bits of the comparand with information stored on the first and second storage elements. In response, comparator 905, 906, 908 selectively controls a voltage on a corresponding one of a plurality of matchline 909.

Abstract: A content addressable memory cell 920 includes a first storage element 922a for storing information and a first transistor 921a for selectively transferring charge representing information from a first bitline 924a to the first storage element 922a. A second transistor 921b selectively transfers charge representing information from a second bitline 924b to a second storage element 922b. First and second comparelines 925a, 925b carry first and second bits of a comparand to a comparator 905, 906, 908 which compares the first and second bits of the comparand with information stored on the first and second storage elements. In response, comparator 905, 906, 908 selectively controls a voltage on a corresponding one of a plurality of matchline 909.

Abstract: A content addressable memory cell 920 includes a first storage element 922a for storing information and a first transistor 921a for selectively transferring charge representing information from a first bitline 924a to the first storage element 922a. A second transistor 921b selectively transfers charge representing information from a second bitline 924b to a second storage element 922b. First and second comparelines 925a, 925b carry first and second bits of a comparand to a comparator 905, 906, 908 which compares the first and second bits of the comparand with information stored on the first and second storage elements. In response, comparator 905, 906, 908 selectively controls a voltage on a corresponding one of a plurality of matchline 909.

Abstract: A memory 1300 including an array of rows and columns of memory cells 501 is disclosed. For each column, first and second interdigitated bitlines 1301, 1303 are coupled to the cells of the column. The first bitlines 1301 has an end coupled to a sense amplifier 1302 at a first boundary of the array and a second bitline 1303 has an end coupled to a second sense amplifier at a second boundary of the array, the first and second boundaries being spaced apart by the array. Control circuitry 508 precharges the first bitlines 1301 of the columns of the array substantially simultaneous to an access to the array through the second bitlines 1303 of selected columns of the array.

Abstract: A dynamic random access memory 400 includes an array 401 of physical rows and columns of memory cells, the cells of each row coupled to first and second wordlines 603 and first and second bitlines 602. A direct input/output data path 402 having a width equal to a width of the rows supports simultaneous writing to each of the cells along a selected row using the first wordlines and first bitlines during a single access cycle without restore.