Patents by Inventor Cryil Cabral, Jr.

Cryil Cabral, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Implantless dopant segregation for silicide contacts
    Patent number: 8889537
    Abstract: A method for formation of a segregated interfacial dopant layer at a junction between a semiconductor material and a silicide layer includes depositing a doped metal layer over the semiconductor material; annealing the doped metal layer and the semiconductor material, wherein the anneal causes a portion of the doped metal layer and a portion of the semiconductor material to react to form the silicide layer on the semiconductor material, and wherein the anneal further causes the segregated interfacial dopant layer to form between the semiconductor material and the silicide layer, the segregated interfacial dopant layer comprising dopants from the doped metal layer; and removing an unreacted portion of the doped metal layer from the silicide layer.
    Type: Grant
    Filed: July 9, 2010
    Date of Patent: November 18, 2014
    Assignee: International Business Machines Corporation
    Inventors: Cryil Cabral, Jr., John M. Cotte, Dinesh R. Koli, Laura L. Kosbar, Mahadevaiyer Krishnan, Christian Lavoie, Stephen M. Rossnagel, Zhen Zhang