Abstract: A compound semiconductor radiation detector includes a body of compound semiconducting material having an electrode on at least one surface thereof. The electrode includes a layer of a compound of a first element and a second element. The first element is platinum and the second element includes at least one of the following: chromium, cobalt, gallium, germanium, indium, molybdenum, nickel, palladium, ruthenium, silicon, silver, tantalum, titanium, tungsten, vanadium, zirconium, manganese, iron, magnesium, copper, tin, or gold. The layer can further include sublayers, each of which is made from a different one of the second elements and platinum as the first element.

Abstract: In a method of annealing a Cd1-xZnxTe sample/wafer, surface contamination is removed from the sample/wafer and the sample/wafer is then introduced into a chamber. The chamber is evacuated and Hydrogen or Deuterium gas is introduced into the evacuated chamber. The sample/wafer is heated to a suitable annealing temperature in the presence of the Hydrogen or Deuterium gas for a predetermined period of time.

Abstract: In a method of annealing a Cd1?xZnxTe sample/wafer, surface contamination is removed from the sample/wafer and the sample/wafer is then introduced into a chamber. The chamber is evacuated and Hydrogen or Deuterium gas is introduced into the evacuated chamber. The sample/wafer is heated to a suitable annealing temperature in the presence of the Hydrogen or Deuterium gas for a predetermined period of time.

Abstract: A CdZnTe photon counting detector includes a core material of Cd1-xZnxTe, where (0?x<1), an anode terminal on one side of the core material and a cathode terminal on a side of the core material opposite the anode terminal. At least one of the following is selected in the design of the detector as a function of the maximum sustainable photon flux the core material is able to absorb in operation while avoiding polarization of the core material: electron lifetime-mobility product of the core material; de-trapping time of the core material; a value of a DC bias voltage applied between the anode and the cathode; a temperature of the core material in operation; a mean photon flux density to be absorbed by the core material in operation; and a thickness of the core material between the anode and the cathode.

Abstract: A method of detecting radiation through which the residence time of charge carriers is dramatically reduced by an external optical energy source and the occupancy of the deep-level defects is maintained close to the thermal equilibrium of the un-irradiated device even under high-flux exposure conditions. Instead of relying on thermal energy to release the trapped carriers, infra-red light radiation is used to provide sufficient energy for the trapped carriers to escape from defect levels. Cd1-xZnxTe crystals are transparent to infra-red light of this energy and no additional absorption occurs other than the one associated with the ionization of the targeted deep-level defects. This allows irradiation geometry from the side source of the Cd1-xZnxTe detector crystals.

Abstract: A method of detecting radiation by which residence time of charge carriers is dramatically reduced by an external optical energy source and the occupancy of deep-level defects is maintained close to the thermal equilibrium of the un-irradiated device at any temperature. The energy of an infra-red light source is tuned within a predetermined band gap energy range and crystals are transparent to the infra-red light of the energy. Thus, other than the one associated with the ionization of the target deep-level defects, no other absorption occurs. Because of this low absorption, infra-red irradiation can be performed through any surface of the crystal that is transparent to the infra-red light which allows irradiation geometry from any side surface(s) of the detector crystals.

Abstract: A radiation detector crystal is made from CdxZn1-xTe, where 0?x?1; an element from column III or column VII of the periodic table, desirably in a concentration of about 1 to 10,000 atomic parts per billion; and the element Ruthenium (Ru), the element Osmium (Os) or the combination of Ru and Os, desirably in a concentration of about 1 to 10,000 atomic parts per billion using a conventional crystal growth method, such as, for example, the Bridgman method, the gradient freeze method, the electro-dynamic gradient freeze method, the so-call traveling heater method or by the vapor phase transport method. The crystal can be used as the radiation detecting element of a radiation detection device configured to detect and process, without limitation, X-ray and Gamma ray radiation events.

Abstract: A room temperature radiation detector is made from a semi-insulating Cd1-xZnxTe crystal, where 0?x?1, having a first electrode made of Pt or Au on one surface of the crystal and a second electrode of Al, Ti or In on another surface of the crystal. In use of the crystal to detect radiation events, an electrical bias is applied between the first and second electrodes.

Abstract: A compound semiconductor radiation detector includes a body of compound semiconducting material having an electrode on at least one surface thereof. The electrode includes a layer of a compound of a first element and a second element. The first element is platinum and the second element includes at least one of the following: chromium, cobalt, gallium, germanium, indium, molybdenum, nickel, palladium, ruthenium, silicon, silver, tantalum, titanium, tungsten, vanadium, zirconium, manganese, iron, magnesium, copper, tin, or gold. The layer can further include sublayers, each of which is made from a different one of the second elements and platinum as the first element.

Abstract: A CdZnTe photon counting detector includes a core material of Cd1-xZnxTe, where (0?x<1), an anode terminal on one side of the core material and a cathode terminal on a side of the core material opposite the anode terminal. At least one of the following is selected in the design of the detector as a function of the maximum sustainable photon flux the core material is able to absorb in operation while avoiding polarization of the core material: electron lifetime-mobility product of the core material; de-trapping time of the core material; a value of a DC bias voltage applied between the anode and the cathode; a temperature of the core material in operation; a mean photon flux density to be absorbed by the core material in operation; and a thickness of the core material between the anode and the cathode.

Abstract: A radiation detector crystal is made from CdxZn1-xTe, where 0?x?1; an element from column III or column VII of the periodic table, desirably in a concentration of about 1 to 10,000 atomic parts per billion; and the element Ruthenium (Ru), the element Osmium (Os) or the combination of Ru and Os, desirably in a concentration of about 1 to 10,000 atomic parts per billion using a conventional crystal growth method, such as, for example, the Bridgman method, the gradient freeze method, the electro-dynamic gradient freeze method, the so-call traveling heater method or by the vapor phase transport method. The crystal can be used as the radiation detecting element of a radiation detection device configured to detect and process, without limitation, X-ray and Gamma ray radiation events.

Abstract: The present invention is a radiation detector that includes a crystalline substrate formed of a II-VI compound and a first electrode covering a substantial portion of one surface of the substrate. A plurality of second, segmented electrodes is provided in spaced relation on a surface of the substrate opposite the first electrode. A passivation layer is disposed between the second electrodes on the surface of the substrate opposite the first electrode. The passivation layer can also be positioned between the substrate and one or both of the first electrode and each second electrode. The present invention is also a method of forming the radiation detector.

Abstract: A radiation detector made from a compound, or alloy, comprising CdxZn1-xTe (0?x?1), an element from column III or column VII of the periodic table in a concentration about 10 to 10,000 atomic parts per billion and an element selected from C the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu in a concentration about 10 to 10,000 atomic parts per billion exhibits full electrical compensation, high-resistivity, full depletion under an applied electrical bias and excellent charge transport.

Abstract: A radiation detector made from a compound, or alloy, comprising CdxZn1?xTe (0=x=1), Pb in a concentration between 10 and 10,000 atomic parts per billion and at least one element selected from the group consisting of (i) Cl and (ii) elements in column III of the periodic table in a concentration between 10 and 10,000 atomic parts per billion. The radiation detector exhibits full electrical compensation, high-resistivity, full depletion under an applied electrical bias and excellent charge transport.

Abstract: A radiation detector (FIG. 1) made from an compound, or alloy, comprising CdxZn1-xTe (0=x=1), Pb in a concentration between 10 and 10,000 atomic parts per billion and at least one element selected from the group consisting of (i) Cl and (ii) elements in column III of the periodic table in a concentration between 10 and 10,000 atomic parts per billion exhibits full electrical compensation, high-resistivity, full depletion under an applied electrical bias and excellent charge transport.