Abstract: A class of organometallic compounds is provided. The compounds correspond in structure to Formula 1 (A)x-M-(OR3)4-x wherein: A is selected from the group consisting of —NR1R2, —N(R4)(CH2)nN(R5R6), —N?C(NR4R5)(NR6R7), OCOR1, halo and Y; R1 and R2 are independently selected from the group consisting of H and a cyclic or acyclic alkyl group having from 1 to 8 carbon atoms, with the proviso that at least one of R1 and R2 must be other than H; R4, R5, R6 and R7 are independently selected from the group consisting of H and an acyclic alkyl group having from 1 to 4 carbon atoms; Y is selected from the group consisting of a 3- to 13-membered heterocyclic radical containing at least one nitrogen atom; R3 is a cyclic or acyclic alkyl group having from 1 to 6 carbon atoms; M is selected from the group consisting of Si, Ge, Sn, Ti, Zr and Hf; x is an integer from 1 to 3; and n is an integer from 1 to 4.

Abstract: Disclosed herein are methods of purifying compounds useful for the deposition of high purity tin oxide and high purity compounds purified by those methods. Such compounds are those of the Formula as follows Rx—Sn-A4-x, wherein: A is selected from the group consisting of (YaR?z) and a 3- to 7-membered N-containing heterocyclic group; each R group is independently selected from the group consisting of an alkyl or aryl group having from 1 to 10 carbon atoms; each R? group is independently selected from the group consisting of an alkyl, acyl or aryl group having from 1 to 10 carbon atoms; x is an integer from 0 to 4; a is an integer from 0 to 1; Y is selected from the group consisting of N, O, S, and P; and z is 1 when Y is O, S or when Y is absent and z is 2 when Y is N or P.

Abstract: A method for forming a metal-containing film includes: a) providing at least one substrate; b) delivering to said substrate at least one compound of Formula 1 in the gaseous phase, (R1R2R3 (Si))—Co(CO)4 (Formula 1), wherein R1, R2 and R3 are independently selected lower alkyl groups; and c) simultaneously with or subsequently to step b), delivering to said substrate a co-reagent in the gaseous phase, the co-reagent being lower alcohol. Further, a method of selectively depositing a metal-containing film includes: a) providing at least two substrates comprising different materials, one of said at least two substrates has an affinity for Si and another of said at least two substrates has an affinity for CO; b) delivering to said substrates at least one compound of the Formula 1 in the gaseous phase; and c) simultaneously with or subsequently to step b), delivering to said at least two substrates at least one co-reagent in the gaseous phase.

Abstract: Disclosed herein are methods of purifying compounds useful for the deposition of high purity tin oxide and high purity compounds purified by those methods. Such compounds are those of the Formula as follows Rx—Sn-A4-x wherein: A is selected from the group consisting of (YaR?z) and a 3- to 7-membered N-containing heterocyclic group; each R group is independently selected from the group consisting of an alkyl or aryl group having from 1 to 10 carbon atoms; each R? group is independently selected from the group consisting of an alkyl, acyl or aryl group having from 1 to 10 carbon atoms; x is an integer from 0 to 4; a is an integer from 0 to 1; Y is selected from the group consisting of N, O, S, and P; and z is 1 when Y is O, S or when Y is absent and z is 2 when Y is N or P.

Abstract: A class of organometallic compounds is provided. The compounds correspond in structure to Formula 1 (A)x-M-(OR3)4-x wherein: A is selected from the group consisting of —NR1R2, —N(R4)(CH2)nN(R5R6), —N?C(NR4R5)(NR6R7), OCOR1, halo and Y; R1 and R2 are independently selected from the group consisting of H and a cyclic or acyclic alkyl group having from 1 to 8 carbon atoms, with the proviso that at least one of R1 and R2 must be other than H; R4, R5, R6 and R7 are independently selected from the group consisting of H and an acyclic alkyl group having from 1 to 4 carbon atoms; Y is selected from the group consisting of a 3- to 13-membered heterocyclic radical containing at least one nitrogen atom; R3 is a cyclic or acyclic alkyl group having from 1 to 6 carbon atoms; M is selected from the group consisting of Si, Ge, Sn, Ti, Zr and Hf; x is an integer from 1 to 3; and n is an integer from 1 to 4.

Abstract: Organometallic compounds useful in chemical phase deposition processes such as atomic layer deposition (ALD) and chemical vapor deposition (CVD).

Abstract: Disclosed herein are methods of purifying compounds useful for the deposition of high purity tin oxide and high purity compounds purified by those methods. Such compounds are those of the Formula as follows Rx—Sn-A4-x, wherein: A is selected from the group consisting of (YaR?z) and a 3- to 7-membered N-containing heterocyclic group; each R group is independently selected from the group consisting of an alkyl or aryl group having from 1 to 10 carbon atoms; each R? group is independently selected from the group consisting of an alkyl, acyl or aryl group having from 1 to 10 carbon atoms; x is an integer from 0 to 4; a is an integer from 0 to 1; Y is selected from the group consisting of N, O, S, and P; and z is 1 when Y is O, S or when Y is absent and z is 2 when Y is N or P.

Abstract: Disclosed herein are compounds useful for the deposition of high purity tin oxide. Also disclose are methods for the deposition of tin oxide films using such compounds. Such films demonstrate high conformality, high etch selectivity and are optically transparent. Such compounds are those of the Formula as follows Rx—Sn-A4-x wherein: A is selected from the group consisting of (YaR?z) and a 3- to 7-membered N-containing heterocyclic group; each R group is independently selected from the group consisting of an alkyl or aryl group having from 1 to 10 carbon atoms; each R? group is independently selected from the group consisting of an alkyl, acyl or aryl group having from 1 to 10 carbon atoms; x is an integer from 0 to 4; a is an integer from 0 to 1; Y is selected from the group consisting of N, O, S, and P; and z is 1 when Y is O, S or when Y is absent and z is 2 when Y is N or P.

Abstract: Organometallic compounds, useful in chemical phase deposition processes, having a structure: [{R1R2R3(A))x-M(CO)y]z, wherein R1, R2 and R3 are selected from H, a lower alkyl group and a phenyl group substituted with at least one selected lower alkyl group, where at least one of R1, R2 and R3 must be other than H; M is selected from cobalt, iron, manganese, and chromium group metals; A is selected from Si, Ge, and Sn; wherein: x=1, y=4, and z=1 when M is selected from a cobalt group metal, x=1, y=5, and z=1 when M is selected from a manganese group metal, x=2, y=4, and z=1 when M is selected from a chromium group metal, and x=2, y=4, and z=1 or, alternatively, x=1, y=4, and z=2 when M is selected from an iron group metal.

Abstract: An aqueous soluble, lanthanide rich nanoparticle for investigative use, such as NMR, MRI, CT, PET, and GdNCT is provided. The nanoparticle is synthesized from a mixture comprising lanthanide ions and coated with a suitably selected organic ligand such that the resultant nanoparticle is soluble in aqueous solutions. A method of collecting nuclear magnetic resonance information on a sample or a subject is also provided.

Abstract: An aqueous soluble, lanthanide rich nanoparticle for investigative use, such as NMR, MRI, CT, PET, and GdNCT is provided. The nanoparticle is synthesized from a mixture comprising lanthanide ions and coated with a suitably selected organic ligand such that the resultant nanoparticle is soluble in aqueous solutions. A method of collecting nuclear magnetic resonance information on a sample or a subject is also provided.