Patents by Inventor Curt D. Bergeron

Curt D. Bergeron has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Indirectly heated cathode ion source
    Patent number: 7138768
    Abstract: An indirectly heated cathode ion source includes an arc chamber housing that defines an arc chamber, an indirectly heated cathode and a filament for heating the cathode. The cathode may include an emitting portion having a front surface, a rear surface and a periphery, a support rod attached to the rear surface of the emitting portion, and a skirt extending from the periphery of the emitting portion. A cathode assembly may include the cathode, a filament and a clamp assembly for mounting the cathode and the filament in a fixed spatial relationship and for conducting electrical energy to the cathode and the filament. The filament is positioned in a cavity defined by the emitting portion and the skirt of the cathode. The ion source may include a shield for inhibiting escape of electrons and plasma from a region outside the arc chamber in proximity to the filament and the cathode.
    Type: Grant
    Filed: May 23, 2002
    Date of Patent: November 21, 2006
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Peter E. Maciejowski, Joseph C. Olson, Shengwu Chang, Bjorn O. Pedersen, Leo V. Klos, Jr., Daniel Distaso, Curt D. Bergeron
  • Gas flow restricting cathode system for ion implanter and related method
    Patent number: 6984831
    Abstract: A cathode system having a cathode element configured to extend through an aperture in a wall of an arc chamber of an ion implanter system. A gas flow through a spacing between the cathode element and the aperture is restricted by a restriction member. A method of ionizing a source gas and a cathode element incorporating the restriction member are also provided.
    Type: Grant
    Filed: March 5, 2004
    Date of Patent: January 10, 2006
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell J. Low, Joseph C. Olson, Curt D. Bergeron, Eric R. Cobb, Jeffrey A. Burgess
  • Indirectly heated cathode ion source
    Publication number: 20030218428
    Abstract: An indirectly heated cathode ion source includes an arc chamber housing that defines an arc chamber, an indirectly heated cathode and a filament for heating the cathode. The cathode may include an emitting portion having a front surface, a rear surface and a periphery, a support rod attached to the rear surface of the emitting portion, and a skirt extending from the periphery of the emitting portion. A cathode assembly may include the cathode, a filament and a clamp assembly for mounting the cathode and the filament in a fixed spatial relationship and for conducting electrical energy to the cathode and the filament. The filament is positioned in a cavity defined by the emitting portion and the skirt of the cathode. The ion source may include a shield for inhibiting escape of electrons and plasma from a region outside the arc chamber in proximity to the filament and the cathode.
    Type: Application
    Filed: May 23, 2002
    Publication date: November 27, 2003
    Inventors: Peter E. Maciejowski, Joseph C. Olson, Shengwu Chang, Bjorn O. Pedersen, Leo V. Klos, Daniel Distaso, Curt D. Bergeron