Abstract: A method for rinsing and drying a workpiece includes placing the workpiece into a chamber and spinning the workpiece. A rinsing fluid, such as water, is applied onto the workpiece through a first outlet in the chamber, with the rinsing fluid moving outwardly towards the edge of the workpiece via centrifugal force, to rinse the workpiece. A drying fluid, such as an alcohol vapor, is applied onto the workpiece through the first outlet, with the drying fluid moving outwardly towards the edge of the workpiece via centrifugal force, to dry the workpiece. The drying fluid advantageously follows a meniscus of the rinsing fluid across the workpiece surface. The rinsing fluid, or the drying fluid, or both fluids, may be applied near or at a central area of the workpiece.

Abstract: This invention provides a process for treating a workpiece having a front side, a back side, and an outer perimeter. In accordance with the process, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides or the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece as the workpiece and corresponding reactor are spinning about an axis of rotation that is generally orthogonal to the center of the face of the workpiece being processed. The flow rate of the one or more processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.

Abstract: An apparatus for processing a semiconductor wafer or similar article includes a reactor having a processing chamber formed by upper and lower rotors. The wafer is supported between the rotors. The rotors are rotated by a spin motor. A processing fluid is introduced onto the top or bottom surface of the wafer, or onto both surfaces, at a central location. The fluid flows outwardly uniformly and in all directions. A wafer support automatically lifts the wafer, so that it can be removed from the reactor by a robot, when the rotors separate from each other after processing.

Abstract: This invention provides a process for treating a workpiece having a front side, a back side, and an outer perimeter. In accordance with the process, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides or the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece as the workpiece and corresponding reactor are spinning about an axis of rotation that is generally orthogonal to the center of the face of the workpiece being processed. The flow rate of the one or more processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.

Abstract: A method for processing a semiconductor wafer or similar article includes the step of spinning the wafer and applying a fluid to a first side of the wafer, while it is spinning. The fluid flows radially outwardly in all directions, over the first side of the wafer, via centrifugal force. As the fluid flows off of the circumferential edge of the wafer, it is contained in an annular reservoir, so that the fluid also flows onto an outer annular area of the second side of the wafer. An opening allows fluid to flow out of the reservoir. The opening defines the location of a parting line beyond which the fluid will not travel on the second side of the wafer. An apparatus for processing a semiconductor wafer or similar article includes a reactor having a processing chamber formed by upper and lower rotors. The wafer is supported between the rotors. The rotors are rotated by a spin motor. A processing fluid is introduced onto the top or bottom surface of the wafer, or onto both surfaces, at a central location.

Abstract: This invention provides a process for treating a workpiece having a front side, a back side, and an outer perimeter. In accordance with the process, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides or the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece as the workpiece and corresponding reactor are spinning about an axis of rotation that is generally orthogonal to the center of the face of the workpiece being processed. The flow rate of the one or more processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.

Abstract: This invention provides a process for treating a workpiece having a front side, a back side, and an outer perimeter. In accordance with the process, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides or the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece as the workpiece and corresponding reactor are spinning about an axis of rotation that is generally orthogonal to the center of the face of the workpiece being processed. The flow rate of the one or more processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.

Abstract: A method for processing a semiconductor wafer or similar article includes the step of spinning the wafer and applying a fluid to a first side of the wafer, while it is spinning. The fluid flows radially outwardly in all directions, over the first side of the wafer, via centrifugal force. As the fluid flows off of the circumferential edge of the wafer, it is contained in an annular reservoir, so that the fluid also flows onto an outer annular area of the second side of the wafer. An opening allows fluid to flow out of the reservoir. The opening defines the location of a parting line beyond which the fluid will not travel on the second side of the wafer. An apparatus for processing a semiconductor wafer or similar article includes a reactor having a processing chamber formed by upper and lower rotors. The wafer is supported between the rotors. The rotors are rotated by a spin motor. A processing fluid is introduced onto the top or bottom surface of the wafer, or onto both surfaces, at a central location.

Abstract: An apparatus for processing a semiconductor wafer or similar article includes a reactor having a processing chamber formed by upper and lower rotors. The wafer is supported between the rotors. The rotors are rotated by a spin motor. A processing fluid is introduced onto the top or bottom surface of the wafer, or onto both surfaces, at a central location. The fluid flows outwardly uniformly and in all directions. A wafer support automatically lifts the wafer, so that it can be removed from the reactor by a robot, when the rotors separate from each other after processing.

Abstract: In a process for treating a workpiece such as a semiconductor wafer, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides of the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece while the workpiece and a reactor holding the workpiece are spinning. The flow rate of the processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.

Abstract: In a process for treating a workpiece such as a semiconductor wafer, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides of the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece while the workpiece and a reactor holding the workpiece are spinning. The flow rate of the processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.

Abstract: A method for processing a semiconductor wafer or similar article includes the step of spinning the wafer and applying a fluid to a first side of the wafer, while it is spinning. The fluid flows radially outwardly in all directions, over the first side of the wafer, via centrifugal force. As the fluid flows off of the circumferential edge of the wafer, it is contained in an annular reservoir, so that the fluid also flows onto an outer annular area of the second side of the wafer. An opening allows fluid to flow out of the reservoir. The opening defines the location of a parting line beyond which the fluid will not travel on the second side of the wafer. An apparatus for processing a semiconductor wafer or similar article includes a reactor having a processing chamber formed by upper and lower rotors. The wafer is supported between the rotors. The rotors are rotated by a spin motor. A processing fluid is introduced onto the top or bottom surface of the wafer, or onto both surfaces, at a central location.

Abstract: A method for processing a semiconductor wafer or similar article includes the step of spinning the wafer and applying a fluid to a first side of the wafer, while it is spinning. The fluid flows radially outwardly in all directions, over the first side of the wafer, via centrifugal force. As the fluid flows off of the circumferential edge of the wafer, it is contained in an annular reservoir, so that the fluid also flows onto an outer annular area of the second side of the wafer. An opening allows fluid to flow out of the reservoir. The opening defines the location of a parting line beyond which the fluid will not travel on the second side of the wafer. An apparatus for processing a semiconductor wafer or similar article includes a reactor having a processing chamber formed by upper and lower rotors. The wafer is supported between the rotors. The rotors are rotated by a spin motor. A processing fluid is introduced onto the top or bottom surface of the wafer, or onto both surfaces, at a central location.

Abstract: In a process for treating a workpiece such as a semiconductor wafer, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides of the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece while the workpiece and a reactor holding the workpiece are spinning. The flow rate of the processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.