Abstract: A wafer transfer machine transfers wafers from either of a first wafer cassette (55) and a second wafer cassette (56) having incompatible registration features into the other, and includes a support plate (30) having a top surface (38) for supporting the first and second wafer cassette. A first and second registration bosses attached to the top surface extend upward into registration features of the first and second wafer cassette, respectively. A carriage (1) is supported by and movable in opposite directions along a track mechanism (41A,B) that is attached in fixed relationship to the support plate (30). First and second wafer pushing members (10A,B) are supported by the carriage. Each wafer pushing member can be moved to push wafers in one of the wafer cassettes into the other by moving the carriage in one direction or the other.

Abstract: A wafer transfer machine transfers wafers from either of a first wafer cassette (55) and a second wafer cassette (56) having incompatible registration features into the other, and includes a support plate (30) having a top surface (38) for supporting the first and second wafer cassette. A first and second registration bosses attached to the top surface extend upward into registration features of the first and second wafer cassette, respectively. A carriage (1) is supported by and movable in opposite directions along a track mechanism (41A,B) that is attached in fixed relationship to the support plate (30). First and second wafer pushing members (10A,B) are supported by the carriage. Each wafer pushing member can be moved to push wafers in one of the wafer cassettes into the other by moving the carriage in one direction or the other.

Abstract: We have found that liquid crystals can be aligned on a polyimide surface exposed to a low energy and neutral Argon ion beam. The energy of the incident ions were varied between 75 and 500 eV, the integrated current density from 100 .mu.A/cm.sup.2 to 500 mA/cm.sup.2, and the angle of incidence over which alignment was measured was between 10 and 20 degrees. The pretilt angle of the liquid crystals could be varied between 0 and 8 degrees, by controlling the processing conditions. Degradation of the polyimide, which leads to charge migration, can be avoided by operating at low accelerating voltages.

Abstract: Silicon and germanium containing materials are used at surface of conductors in electronic devices. Solder can be fluxlessly bonded and wires can be wire bonded to these surfaces. These material are used as a surface coating for lead frames for packaging integrated circuit chips. These materials can be decal transferred onto conductor surfaces or electrolessly or electrolytically disposed thereon.