Abstract: A reorientable electrical outlet employs rotatable female electrical receptacle(s) to allow rotation of a male plug while connected in the rotatable female electrical receptacle. The disclosed technique is adaptable to a variety of rotatable female electrical receptacles ranging from typical residential two receptacles, polarized/grounded receptacles, and non-grounded receptacles. The prongs of a male plug may be inserted into the rotatable female electrical receptacle and rotated to desired positions and remain substantially fixed. Male plug interference with other electrical receptacles is minimized.

Abstract: A method of altering a portion of the semiconductive layer of an electric power cable, to increase its resistance so as to render it electrically insulative. The semiconductive layer is loaded with carbon powder which forms chains to provide conductive pathways through the layer. By introducing an intercalant into the semiconductive layer, which causes the layer to swell, the conductive pathways are interrupted and the material is rendered insulative (>10.sup.4 .OMEGA.-cm). The intercalant may be a polymerizable material with a curing agent which is cured in situ, i.e., without removing the semiconductive layer from the cable. By this method, flashover to the semiconductive layer at a cable splice or termination may be prevented without requiring tedious removal of the exposed portion of the semiconductive layer. The method is usable with both strippable and coextruded semiconductive layers.

Abstract: A method of altering a portion of the semiconductive layer of an electric power cable, to increase its resistance so as to render it electrically insulative. The semiconductive layer is loaded with carbon powder which forms chains to provide conductive pathways through the layer. By introducing an intercalant into the semiconductive layer, which causes the layer to swell, the conductive pathways are interrupted and the material is rendered insulative (>10.sup.4 .OMEGA.-cm). The intercalant may be a polymerizable material with a curing agent which is cured in situ, i.e., without removing the semiconductive layer from the cable. By this method, flashover to the semiconductive layer at a cable splice or termination may be prevented without requiring tedious removal of the exposed portion of the semiconductive layer. The method is usable with both strippable and coextruded semiconductive layers.

Abstract: A microcontroller directed circuit evaluates volume flows through fluid distribution lines. The control circuit is integrated into a modularized housing designed to retro-fit standard fluid divider valve assemblies. The modular housing includes a plunger-driven magnet positioned to actuate a reed switch in response to divider valve piston reciprocation. The control circuit evaluates the frequency of reed switch actuation pulses to derive intelligible fluid flow related data available for RAM storage or conveyance to peripheral computer devices. In a preferred embodiment, a cavitated cylindrical housing contains a control circuit and a reed switch. A plunger acts as a lever arm to transmit the lateral oscillation of a fluid control piston within a divider valve assembly to a magnetic field source within the housing.

Abstract: A method of altering a portion of the semiconductive layer of an electric power cable, to increase its resistance so as to render it electrically insulative. The semiconductive layer is loaded with carbon powder which forms chains to provide conductive pathways through the layer. By introducing an intercalant into the semiconductive layer, which causes the layer to swell, the conductive pathways are interrupted and the material is rendered insulative (>10.sup.4 .OMEGA.-cm). The intercalant may be a polymerizable material with a curing agent which is cured in situ, i.e., without removing the semiconductive layer from the cable. By this method, flashover to the semiconductive layer at a cable splice or termination may be prevented without requiring tedious removal of the exposed portion of the semiconductive layer. The method is usable with both strippable and coextruded semiconductive layers.