Patents by Inventor Cynthia A. Volkert

Cynthia A. Volkert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5625723
    Abstract: A method for reducing the inherent polarization shift caused by birefringence between the TE and TM modes of an optical signal propagating in an optical grating which has a plurality of waveguides includes the step of: irradiating the waveguides of the optical grating for different periods of time to induce a compensating polarization shift that substantially reduces the inherent polarization shift. If desired, a compensating polarization shift may be induced which not only reduces but also substantially eliminates the inherent polarization shift.
    Type: Grant
    Filed: February 28, 1995
    Date of Patent: April 29, 1997
    Assignee: Lucent Technologies Inc.
    Inventors: Corrado Dragone, Benjamin I. Greene, Thomas A. Strasser, Cynthia A. Volkert
  • Patent number: 5506925
    Abstract: A method for reducing birefringence in a silicate waveguide structure having a waveguide core and cladding includes the step of selecting an irradiation energy that induces compaction in the cladding. The waveguide structure is then irradiated with radiation having an energy equal to the irradiation energy to induce a reduction in birefringence.
    Type: Grant
    Filed: February 28, 1995
    Date of Patent: April 9, 1996
    Assignee: AT&T Corp.
    Inventors: Benjamin I. Greene, Thomas A. Strasser, Cynthia A. Volkert
  • Patent number: 5500312
    Abstract: A process for controlling the stress of multilayer films formed on a substrate is disclosed. A plurality of periods, each period having at least two layers of material wherein one of the layers of material is under compressive stress and the other layer of material is under tensile stress, are formed in a substrate. The stress in the multilayer film is controlled by selecting a thickness for the layer under compressive stress and a thickness for the layer under tensile stress that will provide a multilayer film of the desired stress. The thickness of each layer is about 0.5 nm to about 10 nm. Multilayer films with a stress of about -50 MPa to about 50 MPa are obtained using the present process. The present invention is also directed to masks with such multilayer films.
    Type: Grant
    Filed: October 11, 1994
    Date of Patent: March 19, 1996
    Assignee: AT&T Corp.
    Inventors: Lloyd R. Harriott, James A. Liddle, Cynthia A. Volkert, Warren K. Waskiewicz, David L. Windt