Patents by Inventor Cynthia Pagdanganan

Cynthia Pagdanganan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (PECVD)
    Patent number: 8105465
    Abstract: Methods and apparatus for depositing an amorphous carbon layer on a substrate are provided. In one embodiment, a deposition process includes positioning a substrate in a substrate processing chamber, introducing a hydrocarbon source having a carbon to hydrogen atom ratio of greater than 1:2 into the processing chamber, introducing a plasma initiating gas selected from the group consisting of hydrogen, helium, argon, nitrogen, and combinations thereof into the processing chamber, with the hydrocarbon source having a volumetric flow rate to plasma initiating gas volumetric flow rate ratio of 1:2 or greater, generating a plasma in the processing chamber, and forming a conformal amorphous carbon layer on the substrate.
    Type: Grant
    Filed: October 12, 2009
    Date of Patent: January 31, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Kwangduk Douglas Lee, Takashi Morii, Yoichi Suzuki, Sudha Rathi, Martin Jay Seamons, Deenesh Padhi, Bok Hoen Kim, Cynthia Pagdanganan
  • Method for Depositing Conformal Amorphous Carbon Film by Plasma-Enhanced Chemical Vapor Deposition (PECVD)
    Publication number: 20100093187
    Abstract: Methods and apparatus for depositing an amorphous carbon layer on a substrate are provided. In one embodiment, a deposition process includes positioning a substrate in a substrate processing chamber, introducing a hydrocarbon source having a carbon to hydrogen atom ratio of greater than 1:2 into the processing chamber, introducing a plasma initiating gas selected from the group consisting of hydrogen, helium, argon, nitrogen, and combinations thereof into the processing chamber, with the hydrocarbon source having a volumetric flow rate to plasma initiating gas volumetric flow rate ratio of 1:2 or greater, generating a plasma in the processing chamber, and forming a conformal amorphous carbon layer on the substrate.
    Type: Application
    Filed: October 12, 2009
    Publication date: April 15, 2010
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Kwangduk Douglas Lee, Takashi Morii, Yoichi Suzuki, Sudha Rathi, Martin Jay Seamons, Deenesh Padhi, Bok Hoen Kim, Cynthia Pagdanganan