Abstract: Method of depositing a layer of oxide of at least one metal element on a curved surface of a textured metal substrate, said method comprising the following steps: (1) a layer of a precursor of at least one oxide of a metal is deposited using an organic solution of at least one precursor of said metal, this solution preferably having a viscosity, measured at the temperature of the method, of between 1 mPa s and 20 mPa s, and even more preferentially between 2 mPa s and 10 mPa s. (2) said layer of oxide precursor is left to dry, (3) heat treatment is carried out in order to pyrolyse said oxide precursor and to form the oxide, at least part of said heat treatment being carried out under a flow of reducing gas, said reducing gas preferably having a flow rate greater than 0.005 cm/s, preferentially between 0.012 cm/s and 0.1 cm/s, and even more preferentially between 0.04 cm/s and 0.08 cm/s.

Abstract: Method of depositing a buffer layer of epitaxial metal oxide on a functionalised surface of a textured metal substrate, said method comprising the following steps: (1) a layer is deposited of a precursor of an oxide of the type A2?xB2+xO7 where A represents a metal of valency 3 or a mixture of several of these metals, and B a metal of valency 4, and x is a number between ?0.1 and +0.1, from a solution of carboxylates of said metals A and B, (2) said layer of oxide precursor is left to dry, (3) heat treatment is carried out in order to pyrolyse said oxide precursor and to form the oxide, at least part of said heat treatment being carried out under a flow of reducing gas.

Abstract: Method of depositing a layer of oxide of at least one metal element on a curved surface of a textured metal substrate, said method comprising the following steps: (1) a layer of a precursor of at least one oxide of a metal is deposited using an organic solution of at least one precursor of said metal, this solution preferably having a viscosity, measured at the temperature of the method, of between 1 mPa s and 20 mPa s, and even more preferentially between 2 mPa s and 10 mPa s. (2) said layer of oxide precursor is left to dry, (3) heat treatment is carried out in order to pyrolyse said oxide precursor and to form the oxide, at least part of said heat treatment being carried out under a flow of reducing gas, said reducing gas preferably having a flow rate greater than 0.005 cm/s, preferentially between 0.012 cm/s and 0.1 cm/s, and even more preferentially between 0.04 cm/s and 0.08 cm/s.

Abstract: Method of depositing a buffer layer of epitaxial metal oxide on a functionalised surface of a textured metal substrate, said method comprising the following steps: (1) a layer is deposited of a precursor of an oxide of the type A2?xB2+xO7 where A represents a metal of valency 3 or a mixture of several of these metals, and B a metal of valency 4, and x is a number between ?0.1 and +0.1, from a solution of carboxylates of said metals A and B, (2) said layer of oxide precursor is left to dry, (3) heat treatment is carried out in order to pyrolyse said oxide precursor and to form the oxide, at least part of said heat treatment being carried out under a flow of reducing gas.