Patents by Inventor D. Scott Katzer

D. Scott Katzer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated Acoustic Devices
    Publication number: 20230387877
    Abstract: Method for forming an integrated acoustic device. A thin film piezoelectric acoustic transducer is epitaxially formed on a host substrate and is then transferred to a functional target substrate wherein physical phenomena from the piezoelectric transducer and the arbitrary functional substrate interact to form a hybrid acoustic microsystem comprising the piezoelectric transducer and the arbitrary functional substrate.
    Type: Application
    Filed: May 11, 2023
    Publication date: November 30, 2023
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Vikrant J. GOKHALE, Brian P. DOWNEY, Shawn C. MACK, D. Scott KATZER, David J. MEYER, Pallavi DHAGAT, Albrecht JANDER
  • Multifunctional integrated acoustic devices and systems using epitaxial materials
    Patent number: 11831295
    Abstract: Acoustic wave devices based on epitaxially grown heterostructures comprising appropriate combinations of epitaxially grown metallic transition metal nitride (TMN) layers, epitaxially grown Group III-nitride (III-N) piezoelectric semiconductor thin film layers, and epitaxially grown perovskite oxide (PO) layers. The devices can include bulk acoustic wave (BAW) devices, surface acoustic wave (SAW) devices, high overtone bulk acoustic resonator (HBAR) devices, and composite devices comprising HBAR devices integrated with high-electron-mobility transistors (HEMTs).
    Type: Grant
    Filed: September 14, 2020
    Date of Patent: November 28, 2023
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Vikrant J. Gokhale, Brian P. Downey, Matthew T. Hardy, Eric N. Jin, Neeraj Nepal, D. Scott Katzer, David J. Meyer
  • Multifunctional Integrated Acoustic Devices and Systems Using Epitaxial Materials
    Publication number: 20210091746
    Abstract: Acoustic wave devices based on epitaxially grown heterostructures comprising appropriate combinations of epitaxially grown metallic transition metal nitride (TMN) layers, epitaxially grown Group III-nitride (III-N) piezoelectric semiconductor thin film layers, and epitaxially grown perovskite oxide (PO) layers. The devices can include bulk acoustic wave (BAW) devices, surface acoustic wave (SAW) devices, high overtone bulk acoustic resonator (HBAR) devices, and composite devices comprising HBAR devices integrated with high-electron-mobility transistors (HEMTs).
    Type: Application
    Filed: September 14, 2020
    Publication date: March 25, 2021
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Vikrant J. Gokhale, Brian P. Downey, Matthew T. Hardy, Eric N. Jin, Neeraj Nepal, D. Scott Katzer, David J. Meyer
  • EXPITAXIAL SEMICONDUCTOR/SUPERCONDUCTOR HETEROSTRUCTURES
    Publication number: 20210043824
    Abstract: Solid-state devices including a layer of a superconductor material epitaxially grown on a crystalline high thermal conductivity substrate, the superconductor material being one of TiNx, ZrNx, HfNx, VNx, NbNx, TaNx, MoNx, WNx, or alloys thereof, and one or more layers of a semiconducting or insulating or metallic material epitaxially grown on the layer of superconductor material, the semiconducting or insulating material being one of a Group III N material or alloys thereof or a Group 4b N material or SiC or ScN or alloys thereof.
    Type: Application
    Filed: March 6, 2019
    Publication date: February 11, 2021
    Applicants: Cornell University, The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Rusen Yan, Guru Bahadur Singh Khalsa, John Wright, H. Grace Xing, Debdeep Jena, D. Scott Katzer, Neeraj Nepal, Brian P. Downey, David J. Meyer