Patents by Inventor Da-hye KIM
Da-hye KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170279008Abstract: A light emitting diode includes a support substrate; a light emitting structure including a second semiconductor layer, an active layer, and a first semiconductor layer; at least one groove formed on the lower surface of the light emitting structure; a second electrode located on at least the lower surface of the second semiconductor layer, and electrically connected with the second semiconductor layer; an insulating layer partially covering the second electrode and the lower surface of the light emitting structure, and including at least one opening corresponding to the at least one groove; and a first electrode electrically connected to the first semiconductor layer exposed to the at least one groove, and at least partially covering the insulating layer, wherein the second electrode includes a second contact layer including an ohmic contact layer, and the ohmic contact layer is disposed in the shape of a plurality of islands.Type: ApplicationFiled: August 24, 2015Publication date: September 28, 2017Applicant: Seoul Viosys Co., Ltd.Inventors: Jong Kyun YOU, Da Hye KIM, Chang Ik KIM
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Publication number: 20170256687Abstract: Provided are a light source package and a display device including the light source package. The light source package includes a substrate; a light-emitting device mounted on the substrate; a red phosphor layer formed adjacent to a surface of the light-emitting device; and an encapsulation layer for encapsulating the light-emitting device and the red phosphor layer, wherein a phosphor of the red phosphor layer is a fluoride-based red phosphor or a sulfide-based red phosphor. The light source package and the display device including the light source package display excellent color reproduction, without discoloration due to moisture after a long period of time.Type: ApplicationFiled: May 24, 2017Publication date: September 7, 2017Inventors: Chul-hee YOO, Da-hye KIM, Young-sam PARK, Man-ki HONG, Ho-young SONG
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Patent number: 9666773Abstract: Provided are a light source package and a display device including the light source package. The light source package includes a substrate; a light-emitting device mounted on the substrate; a red phosphor layer formed adjacent to a surface of the light-emitting device; and an encapsulation layer for encapsulating the light-emitting device and the red phosphor layer, wherein a phosphor of the red phosphor layer is a fluoride-based red phosphor or a sulfide-based red phosphor. The light source package and the display device including the light source package display excellent color reproduction, without discoloration due to moisture after a long period of time.Type: GrantFiled: February 11, 2015Date of Patent: May 30, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Chul-hee Yoo, Da-hye Kim, Young-sam Park, Man-ki Hong, Ho-young Song
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Publication number: 20170069799Abstract: A light-emitting diode including a support substrate, a semiconductor stack disposed on the support substrate and including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and including a groove exposing a portion of the semiconductor stack, an insulation layer disposed between the support substrate and the semiconductor stack and disposed in the groove, and a first electrode including a first electrode pad and a first electrode extension and contacting the n-type compound semiconductor layer of the semiconductor stack, in which the first electrode extension is connected to the first electrode pad, and the first electrode extension is formed along an outer boundary of the light-emitting diode.Type: ApplicationFiled: November 18, 2016Publication date: March 9, 2017Inventors: Tae Hyuk IM, Chang Yeon Kim, Yeo Jin Yoon, Joon Hee Lee, Ki Bum Nam, Da Hye Kim, Chang Ik Im, Young Wug Kim
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Patent number: 9508909Abstract: A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer.Type: GrantFiled: December 28, 2015Date of Patent: November 29, 2016Assignee: Seoul Viosys Co., Ltd.Inventors: Tae Hyuk Im, Chang Yeon Kim, Yeo Jin Yoon, Joon Hee Lee, Ki Bum Nam, Da Hye Kim, Chang Ik Im, Young Wug Kim
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Publication number: 20160111613Abstract: A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer.Type: ApplicationFiled: December 28, 2015Publication date: April 21, 2016Inventors: Tae Hyuk Im, Chang Yeon Kim, Yeo Jin Yoon, Joon Hee Lee, Ki Bum Nam, Da Hye Kim, Chang Ik Im, Young Wug Kim
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Patent number: 9306120Abstract: A method of fabricating method light-emitting diode according to an exemplary embodiment of the present invention includes forming a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a first substrate, forming a second substrate on the second conductivity-type semiconductor layer, separating the first substrate from the first conductivity-type semiconductor layer, forming a mask pattern including a plurality of openings on the first conductivity-type semiconductor layer exposed after separating the substrate, etching the first conductivity-type semiconductor layer having the mask pattern disposed thereon to form a plurality of recesses separated from each other, removing the mask pattern, and etching a surface of the first conductivity-type semiconductor layer to form a sub-micro texture.Type: GrantFiled: November 20, 2013Date of Patent: April 5, 2016Assignee: Seoul Viosys Co., Ltd.Inventors: Da Hye Kim, Jong Kyun You, Chang Yeon Kim, Tae Hyuk Im
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Patent number: 9236533Abstract: Disclosed are a light-emitting diode and a method for manufacturing the same. A light-emitting diode according to one aspect of the present invention includes: a first conductive clad layer; a light-scattering pattern configured, in the first conductive clad layer, having a refractive index different from that of the first conductive clad layer; an active layer located under the first conductive clad layer; a second conductive clad layer located under the active layer; a first electrode configured to be electrically connected to the first conductive clad layer; and a second electrode configured to be electrically connected to the second conductive clad layer. The light-scattering pattern can improve light extraction efficiency.Type: GrantFiled: December 21, 2012Date of Patent: January 12, 2016Assignee: Seoul Viosys Co., Ltd.Inventors: Tae Hyuk Im, Chang Yeon Kim, Yeo Jin Yoon, Joon Hee Lee, Ki Bum Nam, Da Hye Kim, Chang Ik Im, Young Wug Kim
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Patent number: 9159870Abstract: Exemplary embodiments of the present invention disclose a method of fabricating a gallium nitride (GaN) based semiconductor device. The method includes growing GaN based semiconductor layers on a first surface of a GaN substrate to form a semiconductor stack, and separating at least a first portion of the GaN substrate from the semiconductor stack using a wire cutting technique.Type: GrantFiled: September 11, 2013Date of Patent: October 13, 2015Assignee: Seoul Viosys Co., Ltd.Inventors: Jong Kyun You, Chang Yeon Kim, Da Hye Kim, Tae Hyuk Im, Tae Gyun Kim, Young Wug Kim
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Publication number: 20150243847Abstract: Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED).Type: ApplicationFiled: April 23, 2015Publication date: August 27, 2015Inventors: Chang Yeon KIM, Da Hye Kim, Hong Chul Lim, Joon Hee Lee, Jong Kyun You
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Publication number: 20150228869Abstract: Provided are a light source package and a display device including the light source package. The light source package includes a substrate; a light-emitting device mounted on the substrate; a red phosphor layer formed adjacent to a surface of the light-emitting device; and an encapsulation layer for encapsulating the light-emitting device and the red phosphor layer, wherein a phosphor of the red phosphor layer is a fluoride-based red phosphor or a sulfide-based red phosphor. The light source package and the display device including the light source package display excellent color reproduction, without discoloration due to moisture after a long period of time.Type: ApplicationFiled: February 11, 2015Publication date: August 13, 2015Inventors: Chul-hee YOO, Da-hye KIM, Young-sam PARK, Man-ki HONG, Ho-young SONG
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Patent number: 9029888Abstract: Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED).Type: GrantFiled: May 17, 2011Date of Patent: May 12, 2015Assignee: Seoul Viosys Co., Ltd.Inventors: Chang Yeon Kim, Da Hye Kim, Hong Chul Lim, Joon Hee Lee, Jong Kyun You
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Publication number: 20140367722Abstract: Disclosed are a light-emitting diode and a method for manufacturing the same. A light-emitting diode according to one aspect of the present invention includes: a first conductive clad layer; a light-scattering pattern configured, in the first conductive clad layer, having a refractive index different from that of the first conductive clad layer; an active layer located under the first conductive clad layer; a second conductive clad layer located under the active layer; a first electrode configured to be electrically connected to the first conductive clad layer; and a second electrode configured to be electrically connected to the second conductive clad layer. The light-scattering pattern can improve light extraction efficiency.Type: ApplicationFiled: December 21, 2012Publication date: December 18, 2014Inventors: Tae Hyuk Im, Chang Yeon Kim, Yeo Jin Yoon, Joon Hee Lee, Ki Bum Nam, Da Hye Kim, Chang Ik Im, Young Wug Kim
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Publication number: 20140362603Abstract: Disclosed is a light source module capable of realizing a slim structure and providing excellent luminous efficiency. The light source module includes a circuit board, a light emitting diode chip mounted on the circuit board by flip-chip bonding or surface mount technology (SMT), a wavelength conversion layer disposed on the light emitting diode chip, and a reflector covering an upper surface and at least one of side surfaces of the light emitting diode chip.Type: ApplicationFiled: May 9, 2014Publication date: December 11, 2014Applicant: Seoul Semiconductor Co., Ltd.Inventors: Young Jun SONG, Seoung Ho Jung, Da Hye Kim, Ki Bum Nam, Yu Dae Han, Chung Hoon Lee
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Publication number: 20140138729Abstract: A method of fabricating method light-emitting diode according to an exemplary embodiment of the present invention includes forming a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a first substrate, forming a second substrate on the second conductivity-type semiconductor layer, separating the first substrate from the first conductivity-type semiconductor layer, forming a mask pattern including a plurality of openings on the first conductivity-type semiconductor layer exposed after separating the substrate, etching the first conductivity-type semiconductor layer having the mask pattern disposed thereon to form a plurality of recesses separated from each other, removing the mask pattern, and etching a surface of the first conductivity-type semiconductor layer to form a sub-micro texture.Type: ApplicationFiled: November 20, 2013Publication date: May 22, 2014Applicant: SEOUL VIOSYS CO., LTD.Inventors: Da Hye KIM, Jong Kyun You, Chang Yeon Kim, Tae Hyuk Im
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Publication number: 20140073120Abstract: Exemplary embodiments of the present invention disclose a method of fabricating a gallium nitride (GaN) based semiconductor device. The method includes growing GaN based semiconductor layers on a first surface of a GaN substrate to form a semiconductor stack, and separating at least a first portion of the GaN substrate from the semiconductor stack using a wire cutting technique.Type: ApplicationFiled: September 11, 2013Publication date: March 13, 2014Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Jong Kyun YOU, Chang Yeon Kim, Da Hye Kim, Tae Hyuk Im, Tae Gyun Kim, Young Wug Kim
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Publication number: 20120119243Abstract: Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED).Type: ApplicationFiled: May 17, 2011Publication date: May 17, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Chang Yeon KIM, Da Hye KIM, Hong Chul LIM, Joon Hee LEE, Jong Kyun YOU
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Publication number: 20120105746Abstract: A 3D display apparatus includes a 3D panel which displays a 3D image, a first circular polarization film which is attached to a front side of the 3D panel and converts the 3D image to a circular polarization component by retarding a phase, and 3D glasses including a second circular polarization film which converts the circular polarization component converted by the first circular polarization film to a linear polarization component by retarding a phase, a liquid crystal unit which allows the linear polarization component to pass or isolates the linear polarization component from passing based on a state of the power, and a linear polarization plate which allows the linear polarization component to pass or isolates the linear polarization component from passing based on a direction of the linear polarization component.Type: ApplicationFiled: October 24, 2011Publication date: May 3, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kwan-sik MIN, Da-hye KIM