Abstract: A method for fabricating a silicon carbide power device may include steps of: forming a first n-type silicon carbide layer on top of a second n-type silicon carbide layer; depositing a first metal layer on the first silicon carbide layer; patterning the first metal layer; depositing and patterning a dielectric layer onto at least a portion of the pattered first metal layer; and depositing and patterning a second metal layer to form a Schottky barrier. In one embodiment, the first metal layer is a high work function metal layer, which may include Silver, Aluminum, Chromium, Nickle and Gold. In another embodiment, the second metal layer is called a “Schottky metal” layer, which may include Platinum, Titanium and Nickle Silicide.

Abstract: A passivation method for a silicon carbide (SiC) surface may include steps of providing a silicon carbide surface, depositing a thin metal layer on the silicon carbide surface, forming a first passivation layer on the metal layer at low temperature, and generating a dielectric layer by a reaction between a gas/liquid ambient and the thin metal layer. In one embodiment, the thin metal layer is deposited on the silicon carbide surface by sputtering, e-beam evaporation, electroplating, etc. In another embodiment, the metal may include, but not limited to, aluminum, magnesium, etc. In a further embodiment, the passivation layer can be a low temperature oxide and/or nitride layer. In still a further embodiment, the dielectric layer can be aluminum oxide, titanium di-oxide etc. The passivation method for a silicon carbide (SiC) may further include a step of forming a second passivation layer on the first passivation layer.

Abstract: The disclosed embodiments provide a system for processing data. During operation, the system obtains a hierarchical representation containing a set of namespaces of a set of features shared by a set of statistical models. Next, the system uses the hierarchical representation to obtain, from one or more execution environments, a subset of the features for use in calculating the derived feature. The system then applies a formula from the hierarchical representation to the subset of the features to produce the derived feature. Finally, the system provides the derived feature for use by one or more of the statistical models.

Abstract: A data storage method applied to a flash memory storage device is provided. The method includes: identifying a first tag pointing to a storage unit storing a first data, the first data being a newly updated data; locating the storage unit storing the first data according to the first tag; storing a second data to another storage unit; pointing the first tag to the another storage unit storing the second data. A relationship between the first tag and the storage unit storing the first data is first built. The second data is stored to another storage unit different from the storage unit pointed by the first tag, and a relationship between the first tag and the another storage unit storage the second data is rebuilt. Therefore, data is efficiently stored by using a plurality of storage units to prolong a lifespan of the flash memory.

Abstract: A data storage method applied to a flash memory storage device is provided. The method includes: identifying a first tag pointing to a storage unit storing a first data, the first data being a newly updated data; locating the storage unit storing the first data according to the first tag; storing a second data to another storage unit; pointing the first tag to the another storage unit storing the second data. A relationship between the first tag and the storage unit storing the first data is first built. The second data is stored to another storage unit different from the storage unit pointed by the first tag, and a relationship between the first tag and the another storage unit storage the second data is rebuilt. Therefore, data is efficiently stored by using a plurality of storage units to prolong a lifespan of the flash memory.

Abstract: A fixing structure is adapted for an electronic device. The electronic device has a circuit board. The fixing structure includes a base plate and a position limiting element. The base plate has a first side and a second side. The position limiting element has a first limiting portion and a second limiting portion. The first limiting portion connects the first side of the base plate, and the second limiting portion connects the second side of the base plate, such that the position limiting element and the base plate together form a receiving space. The circuit board is adapted for passing through the receiving space, so as to be assembled onto the base plate.

Abstract: A semiconductor device using an electrically conductive substrate that has a metal connection includes an n-type/p-type electrically conductive substrate and one buffer layer formed on the n-type/p-type electrically conductive substrate. An electrically conductive semiconductor layer is formed on the buffer layer, and the metal connection is formed between the electrically conductive semiconductor layer and the electrically conductive substrate, wherein the electrically conductive semiconductor layer is an n-type/p-type nitride.