Patents by Inventor Da U Ni Kim

Da U Ni Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and operating method thereof
    Patent number: 10297299
    Abstract: A semiconductor memory device may include a memory cell array. The semiconductor memory device may include a peripheral circuit coupled to the memory cell array through word lines. The semiconductor memory device may include an overdrive setting unit configured for determining an overdrive set parameter of an overdrive operation using an operation voltage applied to the word lines.
    Type: Grant
    Filed: September 1, 2017
    Date of Patent: May 21, 2019
    Assignee: SK hynix Inc.
    Inventors: Jung Hwan Lee, Da U Ni Kim
  • Semiconductor memory device and operation method for controlling bit line voltage of the same
    Patent number: 10147489
    Abstract: Provided herein may be a control circuit, peripheral circuit, semiconductor memory device and methods of operating the device and circuits. The method of operating a semiconductor memory device may include applying a control signal having a form, in which a step pulse is combined with a ramp signal, to a gate electrode of a transistor for setting up a voltage of a bit line of the selected memory cell. The method of operating a semiconductor memory device may include applying a program pulse to a word line of the selected memory cell.
    Type: Grant
    Filed: November 29, 2017
    Date of Patent: December 4, 2018
    Assignee: SK hynix Inc.
    Inventor: Da U Ni Kim
  • SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF
    Publication number: 20180197587
    Abstract: A semiconductor memory device may include a memory cell array. The semiconductor memory device may include a peripheral circuit coupled to the memory cell array through word lines. The semiconductor memory device may include an overdrive setting unit configured for determining an overdrive set parameter of an overdrive operation using an operation voltage applied to the word lines.
    Type: Application
    Filed: September 1, 2017
    Publication date: July 12, 2018
    Applicant: SK hynix Inc.
    Inventors: Jung Hwan LEE, Da U Ni KIM
  • CONTROL CIRCUIT, PERIPHERAL CIRCUIT, SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME
    Publication number: 20180082748
    Abstract: Provided herein may be a control circuit, peripheral circuit, semiconductor memory device and methods of operating the device and circuits. The method of operating a semiconductor memory device may include applying a control signal having a form, in which a step pulse is combined with a ramp signal, to a gate electrode of a transistor for setting up a voltage of a bit line of the selected memory cell. The method of operating a semiconductor memory device may include applying a program pulse to a word line of the selected memory cell.
    Type: Application
    Filed: November 29, 2017
    Publication date: March 22, 2018
    Applicant: SK hynix Inc.
    Inventor: Da U Ni KIM
  • Control circuit, peripheral circuit, semiconductor memory device and method of operating the same
    Patent number: 9859008
    Abstract: Provided herein may be a control circuit, peripheral circuit, semiconductor memory device and methods of operating the device and circuits. The method of operating a semiconductor memory device may include applying a control signal having a form, in which a step pulse is combined with a ramp signal, to a gate electrode of a transistor for setting up a voltage of a bit line of the selected memory cell. The method of operating a semiconductor memory device may include applying a program pulse to a word line of the selected memory cell.
    Type: Grant
    Filed: January 31, 2017
    Date of Patent: January 2, 2018
    Assignee: SK hynix Inc.
    Inventor: Da U Ni Kim