Abstract: A method for forming a semiconductor structure is provided. The method for forming the semiconductor structure includes forming a fin structure over a substrate in a first direction, forming a first gate stack, a second gate stack and a third gate stack across the fin structure, removing the first gate stack to form a trench, depositing a cutting structure in the trench, and forming a first contact plug between the cutting structure and the second gate stack and a second contact plug between the second gate stack and the third gate stack. The fin structure is cut into two segments by the trench. A first dimension of the first contact plug in the first direction is greater than a second dimension of the second contact plug in the first direction.

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a substrate having a base, a first fin, and a second fin over the base. The method includes forming a first trench in the base and between the first fin and the second fin. The method includes forming an isolation layer over the base and in the first trench. The first fin and the second fin are partially in the isolation layer. The method includes forming a first gate stack over the first fin and the isolation layer. The method includes forming a second gate stack over the second fin and the isolation layer. The method includes removing a bottom portion of the base. The isolation layer passes through the base after the bottom portion of the base is removed.

Abstract: A transmission unit with reduced crosstalk signal includes a first conductor group having at least one first conductor surrounded by a first sheath and at least one second conductor surrounded by a second sheath. The first and the second conductor are axially arranged corresponding to one another. The first sheath has a dielectric coefficient higher than that of the second sheath, so that a difference in dielectric property exists between the first and the second conductor to enable reduction of crosstalk occurred during high-speed signal transmission over the transmission unit.

Abstract: A signal transmission cable with insulation piercing terminals includes a flat cable having a plurality of conductors, and a plurality of conductive terminals electrically connected to an end of the flat cable. The conductors respectively have a sheathed section, and a bare section located at an end of the sheathed section and having a length ranged between 0.01 mm and 4 mm. The sheathed sections are respectively surrounded by a first sheath before being together surrounded by a second sheath. The conductive terminals respectively include a spring contact and a plurality of piercing sections formed at an end of the spring contact for electrically connecting to the conductors of the flat cable. The bare sections with a defined length can reduce the stub effect on a signal transmitted via the signal transmission cable to achieve better impedance matching and reduced crosstalk interference during digital signal transmission.

Abstract: A transmission unit with reduced crosstalk signal includes a first conductor group having at least one first conductor surrounded by a first sheath and at least one second conductor surrounded by a second sheath. The first and the second conductor are axially arranged corresponding to one another. The first sheath has a dielectric coefficient higher than that of the second sheath, so that a difference in dielectric property exists between the first and the second conductor to enable reduction of crosstalk occurred during high-speed signal transmission over the transmission unit.

Abstract: An anti-electromagnetic-interference (anti-EMI) signal transmission flat cable include a plurality of conducting wires; and an insulating sheath being an integrally formed flat and flexible member for longitudinally enclosing a circumferential surface of each of the conducting wires, so that the conducting wires are substantially equally spaced and parallelly arranged in the insulating sheath to isolate from one another. The insulating sheath has an anti-EMI and electrically non-conductive material doped therein, so as to protect the conducting wires against EMI during signal transmission and accordingly, prevent errors in signal transmission via the conducting wires.