Abstract: A display substrate and a manufacturing method and a display device are provided. The display substrate includes: a base substrate, a first insulation layer, a first electrode pattern, a connecting electrode pattern, a second electrode, a light-emitting functional layer, and a first filling layer. The second electrode is connected with the connecting electrode pattern, the second electrode and the first electrode pattern are spaced apart from each other. The light-emitting functional layer is located between the first electrode pattern and the second electrode. The first filling layer is located between the connecting electrode pattern and the first electrode pattern. The first filling layer and the light-emitting functional layer are different layers; a portion of the first insulation layer that is located between the first electrode pattern and the connecting electrode pattern has a groove, and the first filling layer is at least partially located in the groove.

Abstract: A display substrate including a drive-circuit layer and a light-emitting structure layer, a preparation method thereof, and a display device, the light-emitting structure layer includes an anode, a pixel definition layer, an organic light-emitting layer and a cathode, and an auxiliary electrode and an organic light-emitting block, arranged sequentially, the pixel definition layer includes an anode opening exposing the anode and an electrode opening exposing the auxiliary electrode, the organic light-emitting block is separated from the organic light-emitting layer, the auxiliary electrode includes the first, second and third auxiliary electrodes arranged sequentially; the cathode includes a first horizontal lapping part lapping with the first auxiliary electrode and a second sidewall lapping part lapping with the second auxiliary electrode, the thickness of the second sidewall lapping part in the direction parallel to the substrate is greater than that of the first horizontal lapping part in the direction per

Abstract: A display module, including: a display panel; and a color film layer and a micro-lens layer, provided on a light-emitting side of the display panel; where, the color film layer includes a plurality of filter portions, and the micro-lens layer includes a plurality of first converging lenses and a plurality of second converging lenses; a gap is provided between two adjacent first converging lenses, and an orthographic projection of a first converging lens on the display panel is located within an orthographic projection of a filter portion on the display panel; a second converging lens is provided in the gap between two adjacent first converging lenses, and a vertex of the second converging lens is located between a vertex of the first converging lens and a bottom surface of the first converging lens.

Abstract: A semiconductor device is disclosed including material for absorbing EMI and/or RFI. The device includes a substrate, one or more semiconductor die, and molding compound around the one or more semiconductor die. The material for absorbing EMI and/or RFI may be provided within or on a solder mask layer on the substrate, or within a dielectric core of the substrate. The device may further include EMI/RFI-absorbing material around the molding compound and in contact with the EMI/RFI-absorbing material on the substrate to completely enclose the one or more semiconductor die in EMI/RFI-absorbing material.

Abstract: A semiconductor device is disclosed including material for absorbing EMI and/or RFI. The device includes a substrate, one or more semiconductor die, and molding compound around the one or more semiconductor die. The material for absorbing EMI and/or RFI may be provided within or on a solder mask layer on the substrate, or within a dielectric core of the substrate. The device may further include EMI/RFI-absorbing material around the molding compound and in contact with the EMI/RFI-absorbing material on the substrate to completely enclose the one or more semiconductor die in EMI/RFI-absorbing material.

Abstract: A semiconductor device is disclosed including material for absorbing EMI and/or RFI The device includes a substrate (202), one or more semiconductor die (224,225), and molding compound around the one or more semiconductor die (224,225). The material for absorbing EMI and/or RFI may be provided within or on a solder mask layer (210) on the substrate (202). The device may further include EMI/RFI-absorbing material around the molding compound and in contact with the EMI/RFI-absorbing material on the substrate to completely enclose the one or more semiconductor die in EMI/RFI-absorbing material.

Abstract: A semiconductor device including alternating stepped semiconductor die stacks to allow for large numbers of semiconductor die to be provided within a semiconductor device using short wire bonds.

Abstract: A semiconductor device including alternating stepped semiconductor die stacks to allow for large numbers of semiconductor die to be provided within a semiconductor device using short wire bonds.

Abstract: A semiconductor device, and a method of its manufacture, are disclosed. The semiconductor device includes a semiconductor die, such as a controller die, mounted on a surface of a substrate. Pillars, for example of solder, may also formed on the substrate, around the semiconductor die. The pillars are formed to a height above the substrate that is greater than the height of the substrate-mounted semiconductor die, including any wire bonds, above the substrate. A second group of one or more semiconductor die, such as flash memory die, may be affixed to the substrate, on top of the solder pillars without contacting the substrate-mounted semiconductor die.

Abstract: A semiconductor device is disclosed including material for absorbing EMI and/or RFI The device includes a substrate (202), one or more semiconductor die (224,225), and molding compound around the one or more semiconductor die (224,225). The material for absorbing EMI and/or RFI may be provided within or on a solder mask layer (210) on the substrate (202). The device may further include EMI/RFI-absorbing material around the molding compound and in contact with the EMI/RFI-absorbing material on the substrate to completely enclose the one or more semiconductor die in EMI/RFI-absorbing material.