Abstract: Provided are a semiconductor device and a method of operating the same. A semiconductor includes a test circuit which comprises: a test transistor to be tested for time-dependent dielectric breakdown (TDDB) characteristics using a stress voltage; an input switch disposed between a voltage application node to which the stress voltage is applied and an input node which transmits the stress voltage to the test transistor; and a protection switch disposed between the input node and a ground node.

Abstract: A node device on a blockchain network is provided. The node device includes a blockchain state monitor that calculates an estimated time of transaction processing completion according to a transaction cost by using state information about the blockchain network, a transaction cost determiner that calculates a minimum transaction cost that satisfies a user's requirements by using the calculated estimated time of transaction processing completion, and a transaction processor that processes a transaction of the user in response to a first transaction processing request when the first transaction processing request, which pays a transaction cost equal to or greater than the minimum transaction cost, is generated by the user.

Abstract: A node device on a blockchain network is provided. The node device includes a blockchain state monitor that calculates an estimated time of transaction processing completion according to a transaction cost by using state information about the blockchain network, a transaction cost determiner that calculates a minimum transaction cost that satisfies a user's requirements by using the calculated estimated time of transaction processing completion, and a transaction processor that processes a transaction of the user in response to a first transaction processing request when the first transaction processing request, which pays a transaction cost equal to or greater than the minimum transaction cost, is generated by the user.

Abstract: Provided are a semiconductor device and a method of operating the same. A semiconductor includes a test circuit which comprises: a test transistor to be tested for time-dependent dielectric breakdown (TDDB) characteristics using a stress voltage; an input switch disposed between a voltage application node to which the stress voltage is applied and an input node which transmits the stress voltage to the test transistor; and a protection switch disposed between the input node and a ground node.

Abstract: A contra-rotating multi-layer propeller unit for multi-phase flow according to an exemplary embodiment of the present disclosure includes: a shaft part; a front propeller and a rear propeller connected to the shaft part; an air collection part including a predetermined space therein and the shaft part positioned in the internal space; and an air supply pipe configured to supply air into the air collection part, and a rear propeller blade includes a two-phase blade connected to a rear propeller hub, a layer structure of which an inner surface is connected to an end portion of the two-phase blade, and a single-phase blade positioned at a location corresponding to the two-phase blade on an outer surface of the layer structure.

Abstract: The present invention relates to a nickel-based catalyst for oxidizing carbon monoxide, which is prepared by forming nickel oxide on the surface of a mesoporous support by one or more cycles of atomic layer deposition, and a use thereof. The nickel-based catalyst for oxidizing carbon monoxide according to the present invention is stable at high temperatures because the size of the nickel oxide particles can be restricted to nanometer scales even at high-temperature conditions. In addition, the nickel-based catalyst exhibits catalytic reactivity for oxidation of carbon monoxide even at room temperatures. Additionally, the catalytic activity, which has been deactivated after conducting the catalytic reaction, can be regenerated through annealing and increased gradually through repeated annealing.

Abstract: A contra-rotating multi-layer propeller unit for multi-phase flow according to an exemplary embodiment of the present disclosure includes: a shaft part; a front propeller and a rear propeller connected to the shaft part; an air collection part including a predetermined space therein and the shaft part positioned in the internal space; and an air supply pipe configured to supply air into the air collection part, and a rear propeller blade includes a two-phase blade connected to a rear propeller hub, a layer structure of which an inner surface is connected to an end portion of the two-phase blade, and a single-phase blade positioned at a location corresponding to the two-phase blade on an outer surface of the layer structure.

Abstract: A storage device includes a nonvolatile memory device and a memory controller is provided. The nonvolatile memory device includes a plurality of blocks. The memory controller is configured to detect, upon receiving a power-on signal, a partial block among the plurality of blocks. The partial block includes a first page incompletely programmed due to sudden power-off occurred to the storage device. The memory controller determines whether or not to perform a dummy program operation on the partial block, and programs a second page of the partial bock with dummy data. The first page is different from the second page.

Abstract: A method of programming a memory system includes repetitively performing N program loops for a selected memory cell (where N is a natural number equal to or greater than two). Each of the N program loops includes a program operation and a program verify operation. At least one of the N program loops includes performing the program operation on the selected memory cell and on at least one additionally selected memory cell by applying a program voltage to at least one word line to which the selected memory cell and at least one additionally selected memory cell are connected, and performing the program verify operation on the selected memory cell by applying a program verify voltage to a selected word line to which the selected memory cell is connected.

Abstract: A method of programming a memory system includes repetitively performing N program loops for a selected memory cell (where N is a natural number equal to or greater than two). Each of the N program loops includes a program operation and a program verify operation. At least one of the N program loops includes performing the program operation on the selected memory cell and on at least one additionally selected memory cell by applying a program voltage to at least one word line to which the selected memory cell and at least one additionally selected memory cell are connected, and performing the program verify operation on the selected memory cell by applying a program verify voltage to a selected word line to which the selected memory cell is connected.

Abstract: A method of programming a memory system includes repetitively performing N program loops for a selected memory cell (where N is a natural number equal to or greater than two). Each of the N program loops includes a program operation and a program verify operation. At least one of the N program loops includes performing the program operation on the selected memory cell and on at least one additionally selected memory cell by applying a program voltage to at least one word line to which the selected memory cell and at least one additionally selected memory cell are connected, and performing the program verify operation on the selected memory cell by applying a program verify voltage to a selected word line to which the selected memory cell is connected.

Abstract: The present invention relates to a nickel-based catalyst for oxidizing carbon monoxide, which is prepared by forming nickel oxide on the surface of a mesoporous support by one or more cycles of atomic layer deposition, and a use thereof. The nickel-based catalyst for oxidizing carbon monoxide according to the present invention is stable at high temperatures because the size of the nickel oxide particles can be restricted to nanometer scales even at high-temperature conditions. In addition, the nickel-based catalyst exhibits catalytic reactivity for oxidation of carbon monoxide even at room temperatures. Additionally, the catalytic activity, which has been deactivated after conducting the catalytic reaction, can be regenerated through annealing and increased gradually through repeated annealing.

Abstract: A nonvolatile memory device includes a plurality of vertical NAND flash memory cells arranged in a three dimensional (3D) structure, a first memory block disposed in the 3D structure and having memory cells selected by a first ground selection line and a second ground selection line, wherein the first and second ground selection lines are electrically separated from each other, a second memory block disposed in the 3D structure and having memory cells selected by a third selection line and fourth selection line, wherein the third and fourth ground selection lines are electrically separated from each other, and a pass transistor that transfers a driving signal to turn on ground selection transistors respectively connected to the first and third ground selection lines in response to a block selection signal.

Abstract: A storage device includes a nonvolatile memory device and a memory controller is provided. The nonvolatile memory device includes a plurality of blocks. The memory controller is configured to detect, upon receiving a power-on signal, a partial block among the plurality of blocks. The partial block includes a first page incompletely programmed due to sudden power-off occurred to the storage device. The memory controller determines whether or not to perform a dummy program operation on the partial block, and programs a second page of the partial bock with dummy data. The first page is different from the second page.

Abstract: A method of programming a memory system includes repetitively performing N program loops for a selected memory cell (where N is a natural number equal to or greater than two). Each of the N program loops includes a program operation and a program verify operation. At least one of the N program loops includes performing the program operation on the selected memory cell and on at least one additionally selected memory cell by applying a program voltage to at least one word line to which the selected memory cell and at least one additionally selected memory cell are connected, and performing the program verify operation on the selected memory cell by applying a program verify voltage to a selected word line to which the selected memory cell is connected.

Abstract: The present invention relates to a visible light-responsive photocatalyst with an excellent removal efficiency of environmental contaminants, and a method of preparing the same. According to the present invention, the TiO2 surface having an increased visible light absorbance due to nitrogen-doping has been modified into a hydrophilic surface using polydimethylsiloxane (PDMS), i.e., a silicon-carbon precursor, and thereby significantly improved the removal efficiency of environmental contaminants under visible light. Additionally, the photocatalyst of the present invention for removing environmental contaminants is applicable to environment-friendly fields such as removal of volatile organic compounds, air purification, wastewater treatment and sterilization, and enables to remove contaminants by being attached to the surfaces of external walls of buildings, construction materials, glass windows, sound-absorbing walls, road facilities, signboards, etc., while preventing damages by sunlight.

Abstract: A resistive memory device includes a resistive memory cell, and a read/program circuit configured to program the resistive memory cell from a first state to a second state. The read/program circuit reads a resistance in the first state of the resistive memory cell and adjusts a compliance current supplied to the resistive memory cell according to the read resistance during the program operation.

Abstract: A nonvolatile memory device comprises a plurality of vertical NAND flash memory cells arranged in a three dimensional (3D) structure, a first memory block disposed in the 3D structure and having memory cells selected by a first ground selection line and a second ground selection line, wherein the first and second ground selection lines are electrically separated from each other, a second memory block disposed in the 3D structure and having memory cells selected by a third selection line and fourth selection line, wherein the third and fourth ground selection lines are electrically separated from each other, and a pass transistor that transfers a driving signal to turn on ground selection transistors respectively connected to the first and third ground selection lines in response to a block selection signal.

Abstract: A resistive memory device comprises a resistive memory cell, and a read/program circuit configured to program the resistive memory cell from a first state to a second state. The read/program circuit reads a resistance in the first state of the resistive memory cell and adjusts a compliance current supplied to the resistive memory cell according to the read resistance during the program operation.

Abstract: A method of performing a writing operation of a nonvolatile memory device is provided. The method includes performing a first band program using trim information from a first band register of multiple band registers, which include at least a default band register; and performing a second band program using trim information from a second band register or trim information from the default band register after performing the first band program. The second band register is selected while the first band program is being performed.