Abstract: A method of opening a pad in a semiconductor device. A protective film on a pad may be etched with a pad opening pattern as a mask. Dielectric heating may be performed on the pad opened by etching the protective film. Organic material containing C and F groups on the pad may be removed by heating with molecular vibration and/or microwaves, which may substantially prevent and/or minimize corrosion.

Abstract: A method of opening a pad in a semiconductor device. A protective film on a pad may be etched with a pad opening pattern as a mask. Dielectric heating may be performed on the pad opened by etching the protective film. Organic material containing C and F groups on the pad may be removed by heating with molecular vibration and/or microwaves, which may substantially prevent and/or minimize corrosion.

Abstract: A method of cleaning a silicon nitride layer on a substrate is provided to effectively remove negative-charged impurities such as polymer and particle from the silicon nitride layer. In the method, the zeta potential of the silicon nitride layer is changed from positive to negative, and then the silicon nitride layer is cleaned with a first solution selected from an alkali solution and an NC-2 solution. So the negatively-charged impurities can be easily removed due to a repulsion force. The substrate can be treated with spin scrubber or quick dump rinse before and/or after the changing of the zeta potential. To change the zeta potential, the substrate can be dipped into a second solution such as an SC-1 solution, an NC-2 solution, and an alkali solution.

Abstract: A method of manufacturing a semiconductor device is disclosed wherein a WSiN layer is deposited in a contact hole as a barrier metal using an ALD process. A tungsten layer is deposited on the WSiN layer in the nucleation stage thereof. Then, using a CVD process, the contact hole is completely filled with a tungsten layer. The WSiN layer is continuously and uniformly deposited in the contact hole having high aspect ratio, and the tungsten layer in the nucleation stage can be continuously and uniformly deposited on the WSiN layer, thus completely filling the contact hole with a tungsten layer deposited by the CVD process.

Abstract: A method for fabricating an image sensor comprises forming an over coat layer on an upper face of a semiconductor substrate on which a color filter layer is formed, forming a microlens on the over coat layer; covering the microlens with a protection layer, back grinding a lower face of the semiconductor substrate, and removing the protection layer of the microlens. In this method, the protection layer is formed on the microlens of an image sensor and is subsequently removed after back grinding.

Abstract: A method for fabricating an image sensor comprises forming an over coat layer on an upper face of a semiconductor substrate on which a color filter layer is formed, forming a microlens on the over coat layer; covering the microlens with a protection layer, back grinding a lower face of the semiconductor substrate, and removing the protection layer of the microlens. In this method, the protection layer is formed on the microlens of an image sensor and is subsequently removed after back grinding.

Abstract: A method of manufacturing a semiconductor device is disclosed wherein a WSiN layer is deposited in a contact hole as a barrier metal using an ALD process. A tungsten layer is deposited on the WSiN layer in the nucleation stage thereof. Then, using a CVD process, the contact hole is completely filled with a tungsten layer. The WSiN layer is continuously and uniformly deposited in the contact hole having high aspect ratio, and the tungsten layer in the nucleation stage can be continuously and uniformly deposited on the WSiN layer, thus completely filling the contact hole with a tungsten layer deposited by the CVD process.

Abstract: After a trench is formed into a substrate, a polysilicon layer is formed on sidewalls and a bottom of the trench. A thermal oxidation is performed on the polysilicon layer such that a polysilicon oxide layer is formed thereon. Then, a portion of the polysilicon oxide layer is removed such that the polysilicon layer is exposed on the bottom of the trench while the sidewalls of the trench are still covered by the polysilicon oxide layer. A TEOS-ozone oxide layer is deposited on the substrate to fill the trench. Since the bottom of the trench has a better condition for the deposition of TEOS-ozone oxide layer than that of the sidewalls, a gap fill quality can be enhanced.

Abstract: After a trench is formed into a substrate, a polysilicon layer is formed on sidewalls and a bottom of the trench. A thermal oxidation is performed on the polysilicon layer such that a polysilicon oxide layer is formed thereon. Then, a portion of the polysilicon oxide layer is removed such that the polysilicon layer is exposed on the bottom of the trench while the sidewalls of the trench are still covered by the polysilicon oxide layer. A TEOS-ozone oxide layer is deposited on the substrate to fill the trench. Since the bottom of the trench has a better condition for the deposition of TEOS-ozone oxide layer than that of the sidewalls, a gap fill quality can be enhanced.