Patents by Inventor Dae Kyu Hwang

Dae Kyu Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Zinc oxide semiconductor and method of manufacturing the same
    Patent number: 7842539
    Abstract: There are provided a method of manufacturing a zinc oxide semiconductor, and a zinc oxide semiconductor manufactured using the method. A metal catalyst layer is formed on a zinc oxide thin film that has an electrical characteristic of a n-type semiconductor, and a heat treatment is performed thereon so that the zinc oxide thin film is modified into a zinc oxide thin film having an electrical characteristic of a p-type semiconductor. Hydrogen atoms existing in the zinc oxide thin film are removed by a metal catalyst during the heat treatment. Accordingly, the hydrogen atoms existing in the zinc oxide thin film are removed by the metal catalyst and the heat treatment, and the concentration of holes serving as carriers is increased. That is, an n-type zinc oxide thin film is modified into a highly-concentrated p-type zinc oxide semiconductor.
    Type: Grant
    Filed: June 24, 2008
    Date of Patent: November 30, 2010
    Assignee: Gwangju Institute of Science and Technology
    Inventors: Seong Ju Park, Min Suk Oh, Dae Kyu Hwang, Min Ki Kwon
  • ZINC OXIDE SEMICONDUCTOR AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20090001363
    Abstract: There are provided a method of manufacturing a zinc oxide semiconductor, and a zinc oxide semiconductor manufactured using the method. A metal catalyst layer is formed on a zinc oxide thin film that has an electrical characteristic of a n-type semiconductor, and a heat treatment is performed thereon so that the zinc oxide thin film is modified into a zinc oxide thin film having an electrical characteristic of a p-type semiconductor. Hydrogen atoms existing in the zinc oxide thin film are removed by a metal catalyst during the heat treatment. Accordingly, the hydrogen atoms existing in the zinc oxide thin film are removed by the metal catalyst and the heat treatment, and the concentration of holes serving as carriers is increased. That is, an n-type zinc oxide thin film is modified into a highly-concentrated p-type zinc oxide semiconductor.
    Type: Application
    Filed: June 24, 2008
    Publication date: January 1, 2009
    Applicant: Gwangju Institute of Science and Technology
    Inventors: Seong Ju Park, Min Suk Oh, Dae Kyu Hwang, Min Ki Kwon