Abstract: An etching apparatus comprises a chamber; a substrate supporter in the chamber; a substrate disposed on the substrate and having one of a notch zone and a flat zone, the substrate having a rim of a circular shape except in the one of the notch zone and the flat zone, wherein the rim of the substrate has a dented shape in the notch zone and a chord shape in the flat zone; a substrate-screening unit having a substantially same shape as the substrate and disposed over the substrate, the substrate-screening unit having a portion corresponding to the one of the notch zone and the flat zone, wherein the substrate-screening unit has a first diameter smaller than or equal to a second diameter of the substrate; a gas injection means supplying gases onto a periphery of the substrate; and a power supply unit supplying an RF (radio frequency) power into the chamber.

Abstract: An etching apparatus includes a chamber, a substrate support in the chamber, a substrate-screening unit over the substrate support, wherein a diameter of the substrate-screening unit is smaller than as or equals to a substrate, a gas injection means injecting gases onto a periphery of the substrate, a power supply unit providing an RF (radio frequency) power into the chamber, and a plurality of sensors sensing intervals between the substrate support and the substrate-screening unit.