Patents by Inventor Dae-sun Kim
Dae-sun Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11996844Abstract: A duty cycle correction circuit includes a duty correction circuit, an information generation circuit and a duty control circuit. The duty correction circuit corrects a duty rate of an input clock signal based on a duty control code to generate an output clock signal. The information generation circuit compares a difference between operation power voltages based on an operation mode to generate voltage information. The duty control circuit receives the voltage information from the information generation circuit and generates the duty control code that includes the voltage information based on a duty rate of the output clock signal.Type: GrantFiled: February 7, 2023Date of Patent: May 28, 2024Assignee: SK hynix Inc.Inventors: Dae Ho Yang, Min Su Kim, Kwan Su Shon, Keun Seon Ahn, Soon Sung An, Su Han Lee, Jae Hoon Jung, Kyeong Min Chae, Jae Hyeong Hong, Jun Sun Hwang
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Patent number: 11990361Abstract: The chuck for supporting a target substrate for a display device, the chuck includes: a base having a first surface to support an object and a second surface opposite the first surface, the first surface including a first area and a second area; and indentations formed in the second area and recessed from the first area in a thickness direction of the base. The indentations include a first indentation extending in a first direction and a second indentation extending in a second direction intersecting the first direction.Type: GrantFiled: July 1, 2021Date of Patent: May 21, 2024Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Hee Sun Jang, Tae Hun Kim, Do Hwan Kim, Jae Han Kim, Seung Ho Myoung, Dae Young Oh, Gyeong Hee Han
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Patent number: 11984467Abstract: An image sensor includes an upper chip having a pixel array connected to a first connecting structure, and a lower chip below the upper chip and having a second connecting structure connected to the first connecting structure and having first and second stacked metal layers with a same thickness, a third metal layer on the second metal layer and thicker than the second metal layer, a fourth metal layer on the third metal layer and thicker than the third metal layer, first through third insulating layers alternating with the first through fourth metal layers, a first memory device with a first MTJ element in at least one of the first and second insulating layers, and a second memory device with a second MTJ element different from the first MTJ element, the second MTJ element being in at least one of the first through third insulating layers.Type: GrantFiled: July 6, 2021Date of Patent: May 14, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dae Shik Kim, Min-Sun Keel, Sang Kil Lee
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Publication number: 20240139003Abstract: Provided is a bioresorbable stent including a stent substrate including a bioresorbable polymer and a contrast medium containing an iodine component, coated on the stent substrate. Since the stent according to the present invention is absorbed in and removed from the human body after a predetermined time, it has excellent biodegradability since it has improved radiopacity by iodine contrast medium coating, it has a high radiography contrast and is very efficient even when a procedure is performed with real time radiography, and since it has low foreshortening and high flexibility, radial force, and re-coil, it may be useful for insertion into a blood vessel having a small diameter, an acute occlusive lesion, an imminent occlusive lesion, and the like.Type: ApplicationFiled: May 13, 2022Publication date: May 2, 2024Inventors: Myung Ho JEONG, Dae Sung PARK, Jae Un KIM, Mun Ki KIM, Doo Sun SIM, Kyung Hoon CHO, Dae Young HYUN, Jun Kyu PARK
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Patent number: 11968312Abstract: Disclosed herein are an apparatus and method for processing vehicle data security based on a cloud.Type: GrantFiled: November 16, 2021Date of Patent: April 23, 2024Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Sang-Woo Lee, Dae-Won Kim, Jin-Yong Lee, Boo-Sun Jeon, Bo-Heung Chung, Hong-Il Ju, Joong-Yong Choi
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Publication number: 20240004174Abstract: A structure and method for utilizing natural light indoors or in the interior in a moving space are disclosed. The method includes: determining, by a controller, whether or not current indoor information is confirmable; determining, by the controller, whether or not the current indoor information coincides with a user request signal, upon determining that the current indoor information is confirmable; controlling, by the controller, radiation amounts of the natural light and artificial light, upon determining that the current indoor information does not coincide with the user request signal; and adjusting, by the controller, a position value of a smart lamp unit.Type: ApplicationFiled: September 18, 2023Publication date: January 4, 2024Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATIONInventors: Soon Sung Park, Kwang Ok Jeon, Dae Sun Kim
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Patent number: 11796780Abstract: A structure and method for utilizing natural light indoors or in the interior in a moving space are disclosed. The structure includes: at least one natural light condenser configured to reflect the natural light; a natural light transmitter configured such that the natural light reflected by the at least one natural light condenser is moved to the natural light transmitter; a smart lamp unit including an artificial light generator; a smart lamp driver located adjacent to the smart lamp unit and configured to move the smart lamp unit; and a controller connected to the at least one natural light condenser, the natural light transmitter, the smart lamp unit, and the smart lamp driver so as to transmit and receive information therewith. The controller is configured to combine artificial light with the natural light in response to a user request signal to radiate a combination of the artificial and natural light.Type: GrantFiled: November 22, 2021Date of Patent: October 24, 2023Assignees: HYUNDAI MOTOR COMPANY, KIA CORPORATIONInventors: Soon Sung Park, Kwang Ok Jeon, Dae Sun Kim
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Publication number: 20230152381Abstract: Embodiments of the present disclosure includes an apparatus for estimating the state of charge of a battery, comprising: a first coulomb counter (STCC) for sampling a first charge variation (?Q) on the battery in a time comprising a number of predetermined periods, by adding up a battery current Im in each of the predetermined periods; a compensator for calculating a second charge variation (?Q_comp) by compensating for the first charge variation (?Q); a second coulomb counter (CCE) for calculating a first predicted charge amount (Qe) by adding up the second charge variation (?Q_comp); and a state of charge estimator for estimating the state of charge of the battery on the basis of the first predicted charge amount (Qe). The technique increases the accuracy of a state of charge estimation by compensating for characteristics according to battery temperature and aging.Type: ApplicationFiled: May 7, 2021Publication date: May 18, 2023Inventors: Sang Woo Lee, Dae Sun Kim, Gi Chur Bae
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Publication number: 20220342192Abstract: A structure and method for utilizing natural light indoors or in the interior in a moving space are disclosed. The structure includes: at least one natural light condenser configured to reflect the natural light; a natural light transmitter configured such that the natural light reflected by the at least one natural light condenser is moved to the natural light transmitter; a smart lamp unit including an artificial light generator; a smart lamp driver located adjacent to the smart lamp unit and configured to move the smart lamp unit; and a controller connected to the at least one natural light condenser, the natural light transmitter, the smart lamp unit, and the smart lamp driver so as to transmit and receive information therewith. The controller is configured to combine artificial light with the natural light in response to a user request signal to radiate a combination of the artificial and natural light.Type: ApplicationFiled: November 22, 2021Publication date: October 27, 2022Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATIONInventors: Soon Sung Park, Kwang Ok Jeon, Dae Sun Kim
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Patent number: 10811079Abstract: A semiconductor memory apparatus includes a memory cell unit and an internal voltage stabilization apparatus. The memory cell unit includes a row decoder, a column decoder, and a memory cell array. The internal voltage stabilization apparatus includes an operation termination determination unit configured to determine whether an operation of the semiconductor memory apparatus is terminated on the basis of an external input voltage and output an operation termination command, a termination voltage generation unit configured to generate a termination voltage having a preset voltage value on the basis of a determination result of operation termination by the operation termination determination unit, and a switch unit. The switch unit includes a plurality of switches that are turned in response to the operation termination command, and supplies the termination voltage, input from the termination voltage generation unit, to a plurality of internal nodes of the memory cell array.Type: GrantFiled: February 6, 2019Date of Patent: October 20, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Chan Min Park, Dae Sun Kim, In Cheol Nam, Chang Soo Lee, Jin Seok Jeong
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Publication number: 20200111520Abstract: A semiconductor memory apparatus includes a memory cell unit and an internal voltage stabilization apparatus. The memory cell unit includes a row decoder, a column decoder, and a memory cell array. The internal voltage stabilization apparatus includes an operation termination determination unit configured to determine whether an operation of the semiconductor memory apparatus is terminated on the basis of an external input voltage and output an operation termination command, a termination voltage generation unit configured to generate a termination voltage having a preset voltage value on the basis of a determination result of operation termination by the operation termination determination unit, and a switch unit. The switch unit includes a plurality of switches that are turned in response to the operation termination command, and supplies the termination voltage, input from the termination voltage generation unit, to a plurality of internal nodes of the memory cell array.Type: ApplicationFiled: February 6, 2019Publication date: April 9, 2020Inventors: Chan Min Park, Dae Sun Kim, In Cheol Nam, Chang Soo Lee, Jin Seok Jeong
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Patent number: 10332587Abstract: A dynamic random access memory (DRAM) device includes a memory cell array including a first sub memory cell array block including a plurality of first memory cells between a plurality of first sub word lines, and a plurality of first odd-numbered bit lines and a plurality of dummy bit lines and includes a second sub memory cell array block including a plurality of second memory cells between a plurality of second sub word lines, a plurality of second odd-numbered bit lines, and a plurality of second even-numbered bit lines. The memory cell array may be arranged to have an open bit line architecture in which the plurality of first odd-numbered bit lines and the plurality of second even-numbered bit lines form bit line pairs.Type: GrantFiled: May 22, 2018Date of Patent: June 25, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Ki Jong Sung, Dae Sun Kim, Jin Seon Kim, In Cheol Nam
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Publication number: 20190180812Abstract: A dynamic random access memory (DRAM) device includes a memory cell array including a first sub memory cell array block including a plurality of first memory cells between a plurality of first sub word lines, and a plurality of first odd-numbered bit lines and a plurality of dummy bit lines and includes a second sub memory cell array block including a plurality of second memory cells between a plurality of second sub word lines, a plurality of second odd-numbered bit lines, and a plurality of second even-numbered bit lines. The memory cell array may be arranged to have an open bit line architecture in which the plurality of first odd-numbered bit lines and the plurality of second even-numbered bit lines form bit line pairs.Type: ApplicationFiled: May 22, 2018Publication date: June 13, 2019Inventors: Ki Jong Sung, Dae Sun Kim, Jin Seon Kim, In Cheol Nam
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Patent number: 10319726Abstract: A semiconductor device includes a substrate including an active region and an element isolation region defining the active region, a gate trench extending into the element isolation region and penetrating the active region, and a gate structure filling the gate trench and including a first conductivity-type semiconductor layer, a conductive layer, and a second conductivity-type semiconductor layer, sequentially stacked from a lower portion of the gate trench.Type: GrantFiled: July 6, 2017Date of Patent: June 11, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: In Cheol Nam, Sung Hee Han, Dae Sun Kim
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Publication number: 20180130806Abstract: A semiconductor device includes a substrate including an active region and an element isolation region defining the active region, a gate trench extending into the element isolation region and penetrating the active region, and a gate structure filling the gate trench and including a first conductivity-type semiconductor layer, a conductive layer, and a second conductivity-type semiconductor layer, sequentially stacked from a lower portion of the gate trench.Type: ApplicationFiled: July 6, 2017Publication date: May 10, 2018Inventors: In Cheol NAM, Sung Hee HAN, Dae Sun KIM
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Patent number: 9390778Abstract: A semiconductor memory device includes a memory cell array, sub word-line drivers and power selection switches. The memory cell array includes memory cell rows coupled to word lines. The sub word line drivers are coupled to the word lines. The power selection switches are coupled to the sub word-line drivers. Each power selection switch controls a deactivation voltage level of a first word-line activated from the word-lines and an off-voltage level of a second word line adjacent to the first word line so that the deactivation voltage level and the off-voltage level have at least one of a ground voltage, a first negative voltage and a second negative voltage. The ground voltage, the first negative voltage and the second negative voltage have different voltage levels from each other.Type: GrantFiled: July 13, 2015Date of Patent: July 12, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Su-A Kim, Dae-Sun Kim, Dae-Jeong Kim, Sung-Min Ryu, Kwang-Il Park, Chul-Woo Park, Young-Soo Sohn, Jae-Youn Youn
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Patent number: 9293180Abstract: A memory device comprises: a memory cell array comprising first and second word lines located adjacent to each other, a first memory cell connected to the first word line, and a second memory cell connected to the second word line and located adjacent to the first memory cell; and a word line voltage supplying unit that transitions a word line voltage of the first word line from a first word line voltage to a second word line voltage, in response to a first control signal. A transition control unit generates the first control signal for controlling a pulse of the word line voltage of the first word line in a transition period from the first word line voltage to the second word line voltage in such a way that a transition waveform profile from the first word line voltage to the second word line voltage is different from a transition waveform profile from the second word line voltage to the first word line voltage.Type: GrantFiled: May 29, 2014Date of Patent: March 22, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Eui-chul Jeong, Sung-hee Lee, Dae-sin Kim, Seung-hwan Kim, Dae-sun Kim, Sua Kim, Dong-soo Woo, Na-ra Kim
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Publication number: 20160064056Abstract: A semiconductor memory device includes a memory cell array, sub word-line drivers and power selection switches. The memory cell array includes memory cell rows coupled to word lines. The sub word line drivers are coupled to the word lines. The power selection switches are coupled to the sub word-line drivers. Each power selection switch controls a deactivation voltage level of a first word-line activated from the word-lines and an off-voltage level of a second word line adjacent to the first word line so that the deactivation voltage level and the off-voltage level have at least one of a ground voltage, a first negative voltage and a second negative voltage. The ground voltage, the first negative voltage and the second negative voltage have different voltage levels from each other.Type: ApplicationFiled: July 13, 2015Publication date: March 3, 2016Inventors: SU-A KIM, Dae-Sun KIM, Dae-Jeong KIM, Sung-Min RYU, Kwang-II PARK, Chul-Woo PARK, Young-Soo SOHN, Jae-Youn YOUN
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Patent number: 9159398Abstract: A semiconductor device may include a first memory cell connected to a bit-line and a first word-line, a second memory cell connected to a complementary bit-line and a second word-line, and an equalizer. The equalizer may be configured to transition a voltage of the bit-line and the complementary bit-line from a first voltage to a second voltage different from the first voltage at a first time period when the bit-line and complementary bit line are floating, and to transition the voltage of at least one of the bit-line and the complementary bit-line from the second voltage to a third voltage at a second time period after the first time period when the bit-line and complementary bit line are floating, the third voltage being different from the first and second voltages.Type: GrantFiled: January 5, 2014Date of Patent: October 13, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jung-Il Mok, Jong-Hyoung Lim, Dae-Sun Kim, Ji-Hyun Lee
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Publication number: 20140362637Abstract: A memory device comprises: a memory cell array comprising first and second word lines located adjacent to each other, a first memory cell connected to the first word line, and a second memory cell connected to the second word line and located adjacent to the first memory cell; and a word line voltage supplying unit that transitions a word line voltage of the first word line from a first word line voltage to a second word line voltage, in response to a first control signal. A transition control unit generates the first control signal for controlling a pulse of the word line voltage of the first word line in a transition period from the first word line voltage to the second word line voltage in such a way that a transition waveform profile from the first word line voltage to the second word line voltage is different from a transition waveform profile from the second word line voltage to the first word line voltage.Type: ApplicationFiled: May 29, 2014Publication date: December 11, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Eui-chul Jeong, Sung-hee Lee, Dae-sin Kim, Seung-hwan Kim, Dae-sun Kim, Sua Kim, Dong-soo Woo, Na-ra Kim