Abstract: A light emitting device for a display includes a pixel region including first, second, and third LED stacks, an adhesive layer disposed between the first and second LED stacks, or between the second and third LED stacks, a metal bonding layer at least partially surrounded by the adhesive layer, and disposed between and is electrically connected to the first and second LED stacks, or the second and third LED stacks, and a common electrode pad connected to the first, second, and third LED stacks, first, second, and third electrode pads connected to the first, second, and third LED stacks, respectively, and the first, second, and third LED stacks are configured to be independently driven using the electrode pads.

Abstract: A light emitting device including a first LED sub-unit having a thickness in a first direction, a second LED sub-unit disposed on a portion of the first LED sub-unit in the first direction, each of the first and second LED sub-units comprising a first-type semiconductor layer, a second-type semiconductor layer, and an active layer, a reflective electrode disposed adjacent to the first LED sub-unit and electrically connected to the first-type semiconductor layer of the first LED sub-unit, and a first ohmic electrode forming ohmic contact with the second-type semiconductor layer of the first LED sub-unit, in which the active layer of the first LED sub-unit is configured to generate light, includes AlxGa(1-x-y)InyP (0?x?1, 0?y?1), and overlaps the active layer of the second LED sub-unit in the first direction, and the active layer of the second LED sub-unit includes the same material as the active layer of the first LED sub-unit.

Abstract: A display apparatus including a display substrate, a plurality of light emitting devices disposed on the display substrate, a light blocking layer disposed between the light emitting devices, and a transparent layer covering the light emitting devices and the light blocking layer, in which the light emitting device includes a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, and a third LED sub-unit disposed on the second LED sub-unit, and the third LED sub-unit is disposed closer to an upper surface of the light emitting device than the first LED sub-unit.

Abstract: A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer disposed on the n-type nitride semiconductor layer and having V-pits, an active layer disposed on the V-pit generation layer and including a first well region formed along a flat surface of the V-pit generation layer and a second well region formed in the V-pit of the V-pit generation layer, a p-type nitride semiconductor layer disposed on the active layer and a sub-emission layer interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer and disposed near the active layer. The sub-emission layer may emit light having a peak wavelength within a range of wavelengths shorter than a peak wavelength of the first well region, and light emitted from the light emitting diode is within a range of 0.205?X?0.495 and 0.265?Y?0.450 in CIE color coordinates (X, Y).

Abstract: A light emitting diode pixel for a display including a first LED sub-unit, a second LED sub-unit disposed on a portion of the first LED sub-unit, a third LED sub-unit disposed on a portion of the second LED sub-unit, and a reflective electrode disposed adjacent to the first LED sub-unit, in which each of the first to third LED sub-units comprises an n-type semiconductor layer and a p-type semiconductor layer, each of the n-type semiconductor layers of the first, second, and third LED stacks is electrically connected to the reflective electrode, and the first LED sub-unit, the second LED sub-unit, and the third LED sub-unit are configured to be independently driven.

Abstract: A light emitting diode stack for a display including a first LED stack, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, and a conductive growth substrate coupled to at least one of the second LED stack and the third LED stack, in which light generated from the first LED stack is configured to be emitted to the outside of the light emitting diode stack through the second LED stack, the third LED stack, and the conductive growth substrate, and light generated from the second LED stack is configured to be emitted to the outside of the light emitting diode stack through the third LED stack and the conductive growth substrate.

Abstract: Encoding an image using a non-encoding region of the image, a block-based encoding region of the image, and a pixel-based encoding region of the image.

Abstract: A video encoding method and apparatus and a video decoding method and apparatus are provided. The video encoding method includes: prediction encoding in units of a coding unit as a data unit for encoding a picture, by using partitions determined based on a first partition mode and a partition level, so as to select a partition for outputting an encoding result from among the determined partitions; and encoding and outputting partition information representing a first partition mode and a partition level of the selected partition. The first partition mode represents a shape and directionality of a partition as a data unit for performing the prediction encoding on the coding unit, and the partition level represents a degree to which the coding unit is split into partitions for detailed motion prediction.

Abstract: A light emitting diode pixel for a display including a first LED sub-unit, a second LED sub-unit disposed on a portion of the first LED sub-unit, a third LED sub-unit disposed on a portion of the second LED sub-unit, and a reflective electrode disposed adjacent to the first LED sub-unit, in which each of the first to third LED sub-units comprises an n-type semiconductor layer and a p-type semiconductor layer, each of the n-type semiconductor layers of the first, second, and third LED stacks is electrically connected to the reflective electrode, and the first LED sub-unit, the second LED sub-unit, and the third LED sub-unit are configured to be independently driven.

Abstract: A light emitting device includes a short wavelength light emitting portion, a long wavelength light emitting portion, and a coupling layer combining the short wavelength emitting portion and the long wavelength light emitting portion. Each of the short wavelength light emitting portion and the long wavelength light emitting portion includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The active layer of the long wavelength light emitting portion contains more Indium (In) than the active layer of the short wavelength light emitting portion, and the short wavelength light emitting portion emits light of a shorter wavelength than that of light emitted from the long wavelength light emitting portion.

Abstract: A display apparatus includes a display substrate, first micro LED modules arranged on the display substrate, and at least one second micro LED module disposed between the first micro LED modules. Each of the first micro LED modules includes a first substrate and micro LEDs disposed on the first substrate. The second micro LED module includes a second substrate and micro LEDs disposed on the second substrate. The second substrate bridges two adjacent first substrates.

Abstract: A display apparatus includes a display substrate, first micro LED modules arranged on the display substrate, and at least one second micro LED module disposed between the first micro LED modules. Each of the first micro LED modules includes a first substrate, and micro LEDs disposed on the first substrate, the second micro LED module includes a second substrate, and micro LEDs disposed on the second substrate. The first substrate includes a lower body and a top plate located on the lower body. The lower body is recessed from an edge of the top plate, and the second micro LED module is disposed between recessed lower bodies of adjacent first micro LED modules.

Abstract: A display apparatus is provided. The display apparatus includes a display substrate, a first micro LED module disposed on the display substrate, and a second micro LED module disposed on the display substrate and adjacent to the first micro LED module. The first micro LED module and the second micro LED module have side surfaces facing each other. The side surfaces facing each other of the first micro LED module and the second micro LED module are inclined in an identical direction with respect to an upper surface of the display substrate.

Abstract: A display apparatus including a display substrate, a plurality of light emitting devices disposed on the display substrate, a light blocking layer disposed between the light emitting devices, and a transparent layer covering the light emitting devices and the light blocking layer, in which the light emitting device includes a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, and a third LED sub-unit disposed on the second LED sub-unit, and the third LED sub-unit is disposed closer to an upper surface of the light emitting device than the first LED sub-unit.

Abstract: A display apparatus including a circuit board and a plurality of pixels arranged on the circuit board, in which at least one of the pixels includes a first light emitting device and a second light emitting device spaced apart from each other in a lateral direction, the first light emitting device includes a first LED stack configured to generate light having a first peak wavelength; and the second light emitting device includes a second LED stack configured to generate light having a second peak wavelength, and a third LED stack disposed on the second LED stack and configured to generate light having a third peak wavelength.

Abstract: Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.

Abstract: Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.

Abstract: Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.

Abstract: A method includes: executing an application prepared by an application programming interface (API) of a platform; and providing a network setting information to be used in the executed application to a display. A network connection is performed by the platform based on the network setting information.

Abstract: A video encoding method and apparatus and a video decoding method and apparatus are provided. The video encoding method includes: prediction encoding in units of a coding unit as a data unit for encoding a picture, by using partitions determined based on a first partition mode and a partition level, so as to select a partition for outputting an encoding result from among the determined partitions; and encoding and outputting partition information representing a first partition mode and a partition level of the selected partition. The first partition mode represents a shape and directionality of a partition as a data unit for performing the prediction encoding on the coding unit, and the partition level represents a degree to which the coding unit is split into partitions for detailed motion prediction.