Patents by Inventor Daehyoun Kim

Daehyoun Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming patterns, integrated circuit device, and method of manufacturing the integrated circuit device
    Patent number: 11728167
    Abstract: A hardmask structure including a plurality of hardmask layers is formed on a target layer in a first area and a second area, a first photoresist pattern in the first area and a second photoresist pattern in the second area are formed, a reversible hardmask pattern including a plurality of openings is formed by transferring shapes of the first and second photoresist patterns to a reversible hardmask layer that is one of the plurality of hardmask layers, a gap-fill hardmask pattern is formed by filling some of the plurality of openings formed in the first area with a gap-fill hardmask pattern material, and a feature pattern is formed in the target layer by transferring a shape of the gap-fill hardmask pattern to the target layer in the first area and a shape of the reversible hardmask pattern to the target layer in the second area.
    Type: Grant
    Filed: February 25, 2022
    Date of Patent: August 15, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dongjun Lee, Keunnam Kim, Daehyoun Kim, Taejin Park, Sunghee Han
  • METHOD OF FORMING PATTERNS, INTEGRATED CIRCUIT DEVICE, AND METHOD OF MANUFACTURING THE INTEGRATED CIRCUIT DEVICE
    Publication number: 20220293420
    Abstract: A hardmask structure including a plurality of hardmask layers is formed on a target layer in a first area and a second area, a first photoresist pattern in the first area and a second photoresist pattern in the second area are formed, a reversible hardmask pattern including a plurality of openings is formed by transferring shapes of the first and second photoresist patterns to a reversible hardmask layer that is one of the plurality of hardmask layers, a gap-fill hardmask pattern is formed by filling some of the plurality of openings formed in the first area with a gap-fill hardmask pattern material, and a feature pattern is formed in the target layer by transferring a shape of the gap-fill hardmask pattern to the target layer in the first area and a shape of the reversible hardmask pattern to the target layer in the second area.
    Type: Application
    Filed: February 25, 2022
    Publication date: September 15, 2022
    Inventors: Dongjun Lee, Keunnam Kim, Daehyoun Kim, Taejin Park, Sunghee Han
  • Method of forming patterns, integrated circuit device, and method of manufacturing the integrated circuit device
    Patent number: 11270885
    Abstract: A hardmask structure including a plurality of hardmask layers is formed on a target layer in a first area and a second area, a first photoresist pattern in the first area and a second photoresist pattern in the second area are formed, a reversible hardmask pattern including a plurality of openings is formed by transferring shapes of the first and second photoresist patterns to a reversible hardmask layer that is one of the plurality of hardmask layers, a gap-fill hardmask pattern is formed by filling some of the plurality of openings formed in the first area with a gap-fill hardmask pattern material, and a feature pattern is formed in the target layer by transferring a shape of the gap-fill hardmask pattern to the target layer in the first area and a shape of the reversible hardmask pattern to the target layer in the second area.
    Type: Grant
    Filed: January 30, 2020
    Date of Patent: March 8, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dongjun Lee, Keunnam Kim, Daehyoun Kim, Taejin Park, Sunghee Han
  • METHOD OF FORMING PATTERNS, INTEGRATED CIRCUIT DEVICE, AND METHOD OF MANUFACTURING THE INTEGRATED CIRCUIT DEVICE
    Publication number: 20200411318
    Abstract: A hardmask structure including a plurality of hardmask layers is formed on a target layer in a first area and a second area, a first photoresist pattern in the first area and a second photoresist pattern in the second area are formed, a reversible hardmask pattern including a plurality of openings is formed by transferring shapes of the first and second photoresist patterns to a reversible hardmask layer that is one of the plurality of hardmask layers, a gap-fill hardmask pattern is formed by filling some of the plurality of openings formed in the first area with a gap-fill hardmask pattern material, and a feature pattern is formed in the target layer by transferring a shape of the gap-fill hardmask pattern to the target layer in the first area and a shape of the reversible hardmask pattern to the target layer in the second area.
    Type: Application
    Filed: January 30, 2020
    Publication date: December 31, 2020
    Inventors: Dongjun Lee, Keunnam Kim, Daehyoun Kim, Taejin Park, Sunghee Han