Abstract: A light emitting device for plant growth includes: a light emitting diode (LED) chip configured to emit a first light having a peak wavelength of 380 nm to 445 nm; and at least one wavelength conversion material configured to be excited by the first light, and convert the first light into a light having a peak wavelength of 500 nm to 610 nm, wherein a photosynthetic photon efficacy (PPE) of an output light emitted from the light emitting device is 3.10 ?mol/J or more.

Abstract: Provided is an ultraviolet (UV) light source. The UV light source includes: a substrate coupled to an upper housing; a light-emitting diode (LED) package on the substrate; and a waterproof coating layer on at least a portion of the substrate, wherein the LED package includes: an LED chip configured to generate UV light; and a transparent layer including a lower surface facing the LED chip, an upper surface opposite to the lower surface, and a lateral surface connecting the upper surface to the lower surface, wherein at least a portion of the upper surface of the transparent layer is exposed from the waterproof coating layer, and the transparent layer is configured to directly contact a sterilization-target fluid.

Abstract: A light emitting device for plant growth includes: a light emitting diode (LED) chip configured to emit a first light having a peak wavelength of 380 nm to 445 nm; and at least one wavelength conversion material configured to be excited by the first light, and convert the first light into a light having a peak wavelength of 500 nm to 610 nm, wherein a photosynthetic photon efficacy (PPE) of an output light emitted from the light emitting device is 3.10 ?mol/J or more.

Abstract: A semiconductor light emitting device is provided. The device includes: an LED chip having a lower surface, an upper surface, and a side surface between the upper surface and the lower surface; first and second conductive bumps disposed on first and second conductive bumps provided on the lower surface; a first wavelength conversion layer having a first region provided on the upper surface of the LED chip and a second region which extends past the side surface of the LED chip; a second wavelength conversion layer having a first surface contacting the side surface of the LED chip, a second surface, a third surface connecting the first surface and the second surface, and contacting the second region, and a fourth surface located opposite to the third surface and inclined; and a reflective resin portion provided on the lower surface of the LED chip and the fourth surface.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a first substrate; mounting an integrated circuit structure on the first substrate; mounting a second substrate on the integrated circuit structure; coupling a vertical chip to the first substrate and to the second substrate; and forming a package body for encapsulating the integrated circuit structure, the vertical chip, and a portion of the second substrate.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a first substrate; mounting an integrated circuit structure on the first substrate; mounting a second substrate on the integrated circuit structure; coupling a vertical chip to the first substrate and to the second substrate; and forming a package body for encapsulating the integrated circuit structure, the vertical chip, and a portion of the second substrate.