Patents by Inventor Dai-liang Ma
Dai-liang Ma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11661675Abstract: The present disclosure provides high-purity semi-insulating single-crystal silicon carbide wafer and crystal which include one polytype single crystal. The semi-insulating single-crystal silicon carbide wafer has silicon vacancy inside, wherein the silicon-vacancy concentration is greater than 5E11 cm{circumflex over (?)}-3.Type: GrantFiled: June 3, 2021Date of Patent: May 30, 2023Assignee: TAISIC MATERIALS CORP.Inventors: Dai-Liang Ma, Bang-Ying Yu, Bo-Cheng Lin
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Publication number: 20210395917Abstract: The present disclosure provides semi-insulating single-crystal silicon carbide bulk material and powder which include one polytype single crystal. The semi-insulating single-crystal silicon carbide bulk material has silicon vacancy inside, wherein the silicon-vacancy concentration is greater than 5E11 cm{circumflex over (?)}?3.Type: ApplicationFiled: June 3, 2021Publication date: December 23, 2021Applicant: TAISIC MATERIALS CORP.Inventors: Dai-Liang MA, Bang-Ying YU, Bo-Cheng LIN
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Publication number: 20210395919Abstract: The present disclosure provides a manufacturing method of semi-insulating single-crystal silicon carbide powder comprising: providing a semi-insulating single-crystal silicon carbide bulk, wherein the semi-insulating single-crystal silicon carbide bulk has a first silicon-vacancy concentration, and the first silicon-vacancy concentration is greater than 5E11 cm{circumflex over (?)}?3; refining the semi-insulating single-crystal silicon carbide bulk to obtain a semi-insulating single-crystal silicon carbide coarse particle, wherein the semi-insulating single-crystal silicon carbide coarse particle has a second silicon-vacancy concentration and a first particle diameter, the second silicon-vacancy concentration is greater than 5E11 cm{circumflex over (?)}?3, and the first particle diameter is between 50 ?m and 350 ?m; self-impacting the semi-insulating single-crystal silicon carbide coarse particle to obtain a semi-insulating single-crystal silicon carbide powder, wherein the semi-insulating single-crystal siliType: ApplicationFiled: June 3, 2021Publication date: December 23, 2021Applicant: TAISIC MATERIALS CORP.Inventors: Dai-Liang MA, Bang-Ying YU, Bo-Cheng LIN
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Publication number: 20210395918Abstract: The present disclosure provides high-purity semi-insulating single-crystal silicon carbide wafer and crystal which include one polytype single crystal. The semi-insulating single-crystal silicon carbide wafer has silicon vacancy inside, wherein the silicon-vacancy concentration is greater than 5E11 cm{circumflex over (?)}-3.Type: ApplicationFiled: June 3, 2021Publication date: December 23, 2021Applicant: TAISIC MATERIALS CORP.Inventors: Dai-Liang MA, Bang-Ying YU, Bo-Cheng LIN
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Patent number: 11130152Abstract: A method for the formation of tantalum carbides on a graphite substrate includes the steps of: (a) adding an organic tantalum compound, a chelating agent, a pre-polymer to an organic solvent to form a tantalum polymeric solution; (b) subjecting a graphite substrate with the tantalum polymeric solution to a curing process to form a polymeric tantalum film on the graphite substrate; and (c) subjecting the polymeric tantalum film on the graphite substrate in an oven to a pyrolytic reaction in the presence of a protective gas to obtain a protective tantalum carbide on the graphite substrate.Type: GrantFiled: November 28, 2019Date of Patent: September 28, 2021Assignee: National Chung-Shan Institute of Science and TechnologyInventors: Cheng-Jung Ko, Jun-Bin Huang, Chih-Wei Kuo, Dai-Liang Ma, Bang-Ying Yu
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Patent number: 11072871Abstract: A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained.Type: GrantFiled: December 20, 2019Date of Patent: July 27, 2021Assignee: National Chung-Shan Institute of Science and TechnologyInventors: Chih-Wei Kuo, Dai-Liang Ma, Chia-Hung Tai, Bang-Ying Yu, Cheng-Jung Ko, Bo-Cheng Lin, Hsueh-I Chen
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Patent number: 11049717Abstract: A method for fabricating an ultra-thin graphite film on a silicon carbide substrate includes the steps of: (A) providing a polyamic acid solution and a siloxane-containing coupling agent for polymerizing under an inert gas atmosphere to form a siloxane-coupling-group-containing polyamic acid solution; (B) performing a curing process after applying the siloxane-coupling-group-containing polyamic acid solution to a silicon carbide substrate; (C) placing the silicon carbide substrate in a graphite crucible before placing the graphite crucible in a reaction furnace to perform a carbonization process under an inert gas atmosphere; (D) subjecting the silicon carbide substrate to a graphitization process to obtain a graphite film, thereby make it possible to fabricate an ultra-thin graphite film of high-quality on the surface of silicon carbide in a lower graphitization temperature range.Type: GrantFiled: December 21, 2018Date of Patent: June 29, 2021Assignee: National Chung-Shan Institute of Science and TechnologyInventors: Dai-Liang Ma, Cheng-Jung Ko, Chia-Hung Tai, Jun-Bin Huang, Bang-Ying Yu
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Publication number: 20210189590Abstract: A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained.Type: ApplicationFiled: December 20, 2019Publication date: June 24, 2021Inventors: Chih-Wei Kuo, Dai-Liang Ma, Chia-Hung Tai, Bang-Ying Yu, Cheng-Jung Ko, Bo-Cheng Lin, Hsueh-I Chen
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Publication number: 20210162453Abstract: A method for the formation of tantalum carbides on a graphite substrate includes the steps of: (a) adding an organic tantalum compound, a chelating agent, a pre-polymer to an organic solvent to form a tantalum polymeric solution; (b) subjecting a graphite substrate with the tantalum polymeric solution to a curing process to form a polymeric tantalum film on the graphite substrate; and (c) subjecting the polymeric tantalum film on the graphite substrate in an oven to a pyrolytic reaction in the presence of a protective gas to obtain a protective tantalum carbide on the graphite substrate.Type: ApplicationFiled: November 28, 2019Publication date: June 3, 2021Inventors: Cheng-Jung Ko, Jun-Bin Huang, Chih-Wei Kuo, Dai-Liang Ma, Bang-Ying Yu
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Publication number: 20200203162Abstract: A method for fabricating an ultra-thin graphite film on a silicon carbide substrate includes the steps of: (A) providing a polyamic acid solution and a siloxane-containing coupling agent for polymerizing under an inert gas atmosphere to form a siloxane-coupling-group-containing polyamic acid solution; (B) performing a curing process after applying the siloxane-coupling-group-containing polyamic acid solution to a silicon carbide substrate; (C) placing the silicon carbide substrate in a graphite crucible before placing the graphite crucible in a reaction furnace to perform a carbonization process under an inert gas atmosphere; (D) subjecting the silicon carbide substrate to a graphitization process to obtain a graphite film, thereby make it possible to fabricate an ultra-thin graphite film of high-quality on the surface of silicon carbide in a lower graphitization temperature range.Type: ApplicationFiled: December 21, 2018Publication date: June 25, 2020Inventors: Dai-Liang Ma, Cheng-Jung Ko, Chia-Hung Tai, Jun-Bin Huang, Bang-Ying Yu
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Patent number: 10612159Abstract: A device for measuring distribution of thermal field in a crucible comprises a crucible comprising an upper lid, a body, a growth chamber and a material source zone; a thermally insulating material disposed outside the crucible; a movable heating component for heating the crucible; a plurality of thermocouples enclosed by insulating, high temperature resistant material and disposed in the crucible after being inserted into a plurality of holes on the upper lid to measure distribution of thermal field in the crucible. The thermocouples enclosed by insulating, high temperature resistant material are effective in measuring and adjusting temperature distribution in the crucible to achieve optimal temperature distribution for crystal growth in the crucible.Type: GrantFiled: March 7, 2018Date of Patent: April 7, 2020Assignee: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Dai-Liang Ma, Tsao-Chun Peng, Cheng-Jung Ko, Bang-Ying Yu, Chih-Wei Kuo, Ying-Cong Zhao
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Patent number: 10385443Abstract: A device for growing large-sized monocrystalline crystals, including a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region; a thermally insulating material disposed outside the crucible and below a heat dissipation component; and a plurality of heating components disposed outside the thermally insulating material to provide heat sources, wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material.Type: GrantFiled: November 16, 2016Date of Patent: August 20, 2019Assignee: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Dai-Liang Ma, Hsueh-I Chen, Bo-Cheng Lin, Cheng-Jung Ko, Ying-Cong Zhao, Chih-Wei Kuo, Shu-Yu Yeh
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Publication number: 20190186043Abstract: A device for measuring distribution of thermal field in a crucible comprises a crucible comprising an upper lid, a body, a growth chamber and a material source zone; a thermally insulating material disposed outside the crucible; a movable heating component for heating the crucible; a plurality of thermocouples enclosed by insulating, high temperature resistant material and disposed in the crucible after being inserted into a plurality of holes on the upper lid to measure distribution of thermal field in the crucible. The thermocouples enclosed by insulating, high temperature resistant material are effective in measuring and adjusting temperature distribution in the crucible to achieve optimal temperature distribution for crystal growth in the crucible.Type: ApplicationFiled: March 7, 2018Publication date: June 20, 2019Inventors: DAI-LIANG MA, TSAO-CHUN PENG, CHENG-JUNG KO, BANG-YING YU, CHIH-WEI KUO, YING-CONG ZHAO
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Publication number: 20190186045Abstract: A device for growing a carbide of specific shape includes (A) a crucible; (B) a raw material source zone where a SiC raw material precursor is accessible; (C) a deposition zone where SiC is grown; (D) a gas temperature gradient control zone characterized by a temperature gradient; (E) a current deposition carrier disposed within the deposition zone and characterized by at least one repetition of a succession of one or at least two specific shapes of the current deposition carrier; and (F) a heating component for heating the SiC raw material precursor to turn it into gas molecules, so as to effectuate its deposition on the current deposition carrier.Type: ApplicationFiled: February 26, 2018Publication date: June 20, 2019Inventors: BANG-YING YU, HSUEH-I CHEN, DAI-LIANG MA, CHENG-JUNG KO
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Patent number: 10246334Abstract: A method of producing a heterophase graphite, including the steps of (A) providing a silicon carbide single-crystal substrate; (B) placing the silicon carbide single-crystal substrate in a graphite crucible and then in a reactor to undergo an air extraction process; and (C) performing a desilicification reaction on the silicon carbide single-crystal substrate in an inert gas atmosphere to obtain 2H graphite and 3R graphite, so as to directly produce lumpy (sheetlike, crushed, particulate, and powderlike) 2H graphite and 3R graphite, and preclude secondary contamination of raw materials which might otherwise occur because of a crushing step, an oxidation step, and an acid rinsing step.Type: GrantFiled: February 16, 2017Date of Patent: April 2, 2019Assignee: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Dai-Liang Ma, Cheng-Jung Ko, Bang-Ying Yu, Tsao-Chun Peng
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Publication number: 20180179065Abstract: A method of producing a heterophase graphite, including the steps of (A) providing a silicon carbide single-crystal substrate;(B) placing the silicon carbide single-crystal substrate in a graphite crucible and then in a reactor to undergo an air extraction process; and (C) performing a desilicification reaction on the silicon carbide single-crystal substrate in an inert gas atmosphere to obtain 2H graphite and 3R graphite, so as to directly produce lumpy (sheetlike, crushed, particulate, and powderlike) 2H graphite and 3R graphite, and preclude secondary contamination of raw materials which might otherwise occur because of a crushing step, an oxidation step, and an acid rinsing step.Type: ApplicationFiled: February 16, 2017Publication date: June 28, 2018Inventors: DAI-LIANG MA, CHENG-JUNG KO, BANG-YING YU, TSAO-CHUN PENG
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Publication number: 20180087186Abstract: A method of producing a carbide raw material includes the steps of (A) providing a porous carbon material and a high-purity silicon raw material or a metal raw material and applying the porous carbon material and the high-purity silicon raw material or a metal raw material alternately to form a layer structure; (B) putting the layer structure in a synthesis furnace to undergo a gas evacuation process; and (C) producing a carbide raw material with a synthesis reaction which the layer structure undergoes in an inert gas atmosphere, wherein the carbide raw material is a carbide powder of a particle diameter of less than 300 ?m, thereby preventing secondary raw material contamination otherwise arising from comminution, oxidation and acid rinsing.Type: ApplicationFiled: November 15, 2016Publication date: March 29, 2018Inventors: CHENG-JUNG KO, DAI-LIANG MA, BO-CHENG LIN, HSUEH-I CHEN, BANG-YING YU, SHU-YU YEH
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Publication number: 20180057925Abstract: A device for growing large-sized monocrystalline crystals, including a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region; a thermally insulating material disposed outside the crucible and below a heat dissipation component; and a plurality of heating components disposed outside the thermally insulating material to provide heat sources, wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material.Type: ApplicationFiled: November 16, 2016Publication date: March 1, 2018Inventors: DAI-LIANG MA, HSUEH-I CHEN, BO-CHENG LIN, CHENG-JUNG KO, YING-CONG ZHAO, CHIH-WEI KUO, SHU-YU YEH
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Patent number: 9689087Abstract: A method of making a photonic crystal includes step 1 providing a seed, followed by etching a surface of the seed to form thereon submicron voids; step 2 providing a graphite disk, followed by coating a side of the graphite disk with a graphite adhesive whereby the void-formed surface of the seed is attached to the graphite disk to form a seed holder; step 3 placing the seed holder above a growth chamber, followed by placing a raw material below the growth chamber; step 4 forming a thermal field in the growth chamber with a heating device to sublime the raw material; and step 5 controlling temperature, thermal field, atmosphere and pressure in the growth chamber to allow the gaseous raw material to be conveyed and deposited on the seed, thereby forming a photonic crystal.Type: GrantFiled: December 8, 2015Date of Patent: June 27, 2017Assignee: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Ta-Ching Li, Dai-Liang Ma, Bang-Ying Yu, Bo-Cheng Lin
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Publication number: 20170159206Abstract: A method of making a photonic crystal includes step 1 providing a seed, followed by etching a surface of the seed to form thereon submicron voids; step 2 providing a graphite disk, followed by coating a side of the graphite disk with a graphite adhesive whereby the void-formed surface of the seed is attached to the graphite disk to form a seed holder; step 3 placing the seed holder above a growth chamber, followed by placing a raw material below the growth chamber; step 4 forming a thermal field in the growth chamber with a heating device to sublime the raw material; and step 5 controlling temperature, thermal field, atmosphere and pressure in the growth chamber to allow the gaseous raw material to be conveyed and deposited on the seed, thereby forming a photonic crystal.Type: ApplicationFiled: December 8, 2015Publication date: June 8, 2017Inventors: TA-CHING LI, DAI-LIANG MA, BANG-YING YU, BO-CHENG LIN