Abstract: There is provided a sensing chip capable of measuring a refractive index by utilizing a long-range surface plasmon polariton, accurately measuring an accumulative refractive index in a wide range, and more easily enabling sealing for measurement. The present invention relates to the sensing chip which has a thin metal film or a strip-like metal grown on an underlayer, and has a dielectric that limits a refractive index and a dielectric buffer layer on an upper surface and a lower surface of the thin metal film or the strip-like metal. The dielectric buffer layer is attached onto the thin metal film or the strip-like metal. The thin metal film or the strip-like metal and the buffer layer are sandwiched between two dielectric layers. A hole is made in a surface of the upper dielectric layer to serve as a measurement groove.

Abstract: Provided is a plasmon resonance detector that can detect temperature change in optical devices, in which the metal structure having plasmon resonance absorption is used for the optical devices. A diode formed of a conductive substrate, an n-type semiconductor layer, an i-type semiconductor layer, a p-type semiconductor layer, an n electrode (negative electrode), a p electrode (positive electrode), an insulating film, or the like is used as a semiconductor device whose resistance value changes in accordance with temperature change. A nanochain formed by connecting a plurality of metal nanoparticles is disposed on this diode. When the nanochain is irradiated with light, the nanochain generates heat. The heat generated in the nanochain is conducted to the diode. The resistance value of the diode changes in accordance with temperature change, and thus this change is read, a temperature or an amount of heat generation of the nanochain is measured, and existence and strength of the plasmon resonance are detected.

Abstract: A surface plasmon resonance sensor chip includes: a first dielectric layer; a metal layer disposed on the first dielectric layer; and a second dielectric layer covering the metal layer, the chip being provided with an opening that makes a part of a surface on the side of the second dielectric layer of the metal layer be exposed, and allows a measurement sample and the surface on the side of the second dielectric layer to contact each other, wherein an organic molecule film is provided at least one of between the first dielectric layer and the metal layer, and between the metal layer and the second dielectric layer.

Abstract: A two-dimensional photonic crystal laser light is provided. The two-dimensional photonic crystal laser includes a two-dimensional photonic crystal made of a plate-shaped member provided with a periodic arrangement of identically-shaped modified refractive index areas having a refractive index different from that of the plate-shaped member; and an active layer provided on one side of the two-dimensional photonic crystal. The modified refractive index areas are arranged at lattice points of a lattice with a same period at least in two directions; each modified refractive index area is shaped so that a feedback strength is different with respect to directions of two primitive lattice vectors of the lattice; the two-dimensional photonic crystal has a periodic structure of a supercell, which contains a plurality of lattice points; and the sum of the feedback strengths by all modified refractive index areas in the supercell is identical in each direction of the two primitive lattice vectors.

Abstract: An organic electroluminescence device, includes a substrate; an anode layer; an organic layer including at least one organic material having a fluorescence spectrum; and a cathode layer, wherein the organic electroluminescence device has a primary light outgoing direction that is parallel to a surface of the substrate, wherein the organic electroluminescence device has an optical waveguide that includes a core layer formed by the anode layer and the organic layer, and a clad layer formed by the substrate and the cathode layer, and wherein the optical waveguide has cutoff wavelengths in a transverse electric mode any one of which is within a wavelength range of a full width at half maximum of the fluorescence spectrum of any one of the organic materials included in the organic layer.

Abstract: An objective of the present invention is to provide a surface emitting laser capable of selectively generating a laser oscillation in the fundamental mode and thereby emitting a single-wavelength laser light. In a surface emitting laser including an active layer and a two-dimensional photonic crystal provided on one side of the active layer, a reflector 45 or 46 is provided at least at a portion of the circumference of the two-dimensional photonic crystal. The reflector has a reflectance distribution in which the reflectance has a maximum value at a position where the amplitude envelope of the fundamental mode of an internal resonance light created within the two-dimensional photonic crystal. This design strengthens the fundamental mode while suppressing the second mode, thus enabling the laser oscillation in the fundamental mode to be selectively obtained, so that a single-wavelength laser light can be emitted.

Abstract: One objective of the present invention is to provide a laser device which is capable of scanning beams of a laser light of high output power at a high speed without using mechanical scanning mechanisms. A plurality of the upper electrodes 33 is linearly arranged in the photonic crystal laser provided with an active layer 21 and a two-dimensional photonic crystal layer 23 which are held between upper electrodes 33 and a lower electrode 27. A current is introduced from one upper electrode 33 or the plurality of the upper electrodes 33 disposed adjacently. Therefore, the active layer 21 generates light and the light is intensified by diffraction in the two-dimensional photonic crystal layer 23, so that a stronger laser light is emitted to the outside from around the upper electrodes 33 into which a current is introduced. When the current-injected upper electrodes are sequentially switched, a laser light scan is performed in the direction of the array of the upper electrodes.

Abstract: The present invention provides a hybrid coupling structure of a short range surface plasmon polariton and a conventional dielectric waveguide, including a dielectric substrate layer, a dielectric waveguide layer positioned on the said dielectric substrate layer, a coupling matching layer positioned on the said dielectric waveguide layer and a short range surface plasmon waveguide portion, formed on the said coupling matching layer, for conducting the short range surface plasmon polariton. The present invention also provides a coupling structure of a long range surface plasmon polariton and a dielectric waveguide, including a dielectric substrate layer, a dielectric waveguide layer, a coupling matching layer and a long range surface plasmon waveguide portion upward from below respectively.

Abstract: Provided is a plasmon resonance detector that can detect temperature change in optical devices, in which the metal structure having plasmon resonance absorption is used for the optical devices. A diode formed of a conductive substrate, an n-type semiconductor layer, an i-type semiconductor layer, a p-type semiconductor layer, an n electrode (negative electrode), a p electrode (positive electrode), an insulating film, or the like is used as a semiconductor device whose resistance value changes in accordance with temperature change. A nanochain formed by connecting a plurality of metal nanoparticles is disposed on this diode. When the nanochain is irradiated with light, the nanochain generates heat. The heat generated in the nanochain is conducted to the diode. The resistance value of the diode changes in accordance with temperature change, and thus this change is read, a temperature or an amount of heat generation of the nanochain is measured, and existence and strength of the plasmon resonance are detected.

Abstract: The present invention relates to a surface plasmon resonance sensor which has a first dielectric layer, a metal layer disposed on the first dielectric layer, and a second dielectric layer covering the metal layer. The surface plasmon resonance sensor includes: a sensor main body provided with an opening for exposing a part of a surface of the metal layer on a side facing the second dielectric layer, and for allowing a measurement sample to be brought into contact with this surface; a light source for introducing a beam into the metal layer from one end of the metal layer in a longitudinal direction of the metal layer; and a detection unit detecting a beam emitted from the other end of the metal layer, has high sensitivity in measurement, is downsized, and is usable in a simple manner.

Abstract: The two-dimensional photonic crystal surface emitting laser according to the present invention includes a number of main modified refractive index areas periodically provided in a two-dimensional photonic crystal and secondary structures each relatively located in a similar manner to each of the main modified refractive index areas. The location of the secondary structure is determined so that a main reflected light which is reflected by a main modified refractive index area and a secondary reflected light which is reflected by a secondary structure are weakened or intensified by interference.

Abstract: The two-dimensional photonic crystal surface emitting laser according to the present invention includes a semiconductor substrate, a main laser section and a reflection film. The main laser section includes a lower cladding layer, an active layer, a two-dimensional photonic crystal layer, an upper cladding layer and a contact layer, which are all deposited on the semiconductor substrate. The reflection film, which surrounds the entire side surfaces of the main laser section, is made of a thin titanium-gold film deposited by sputtering.

Abstract: An objective of the present invention is to provide a surface emitting laser capable of selectively generating a laser oscillation in the fundamental mode and thereby emitting a single-wavelength laser light. In a surface emitting laser including an active layer and a two-dimensional photonic crystal provided on one side of the active layer, a reflector 45 or 46 is provided at least at a portion of the circumference of the two-dimensional photonic crystal. The reflector has a reflectance distribution in which the reflectance has a maximum value at a position where the amplitude envelope of the fundamental mode of an internal resonance light created within the two-dimensional photonic crystal. This design strengthens the fundamental mode while suppressing the second mode, thus enabling the laser oscillation in the fundamental mode to be selectively obtained, so that a single-wavelength laser light can be emitted.

Abstract: The present invention provides a two-dimensional photonic crystal surface-emitting laser light source capable of producing a beam that is not accompanied by unnecessary side lobes. A window-shaped electrode 36 having a central window 361 devoid of the electrode material is provided on the surface of a device substrate 31 from which surface emission is extracted. A mount surface electrode 37 having an area smaller than that of the window-shaped electrode 36 including the window 361 is provided on a mount surface 38. The distance between the device substrate 31 and the active layer 32 is larger than that between the mount surface 38 and the active layer 32. When a voltage is applied between the electrodes, electric charges are injected into the active layer and emission is obtained. Then, a component of light having a specific wavelength is amplified by a two-dimensional photonic crystal 33, whereby a laser oscillation is produced. The laser light is extracted through the window 361 to the outside.

Abstract: There is provided a sensing chip capable of measuring a refractive index by utilizing a long-range surface plasmon polariton, accurately measuring an accumulative refractive index in a wide range, and more easily enabling sealing for measurement. The present invention relates to the sensing chip which has a thin metal film or a strip-like metal grown on an underlayer, and has a dielectric that limits a refractive index and a dielectric buffer layer on an upper surface and a lower surface of the thin metal film or the strip-like metal. The dielectric buffer layer is attached onto the thin metal film or the strip-like metal. The thin metal film or the strip-like metal and the buffer layer are sandwiched between two dielectric layers. A hole is made in a surface of the upper dielectric layer to serve as a measurement groove.

Abstract: A surface plasmon resonance sensor chip includes: a first dielectric layer; a metal layer disposed on the first dielectric layer; and a second dielectric layer covering the metal layer, the chip being provided with an opening that makes a part of a surface on the side of the second dielectric layer of the metal layer be exposed, and allows a measurement sample and the surface on the side of the second dielectric layer to contact each other, wherein an organic molecule film is provided at least one of between the first dielectric layer and the metal layer, and between the metal layer and the second dielectric layer.

Abstract: A two-dimensional photonic crystal surface emitting laser light source according to the present invention includes a two-dimensional photonic crystal made of a plate-shaped body material provided with a periodic arrangement of identically-shaped holes 242A and an active layer provided on one side of the two-dimensional photonic crystal. The hole 242A is not located on a first half-line 251 extending from the gravity center G1 of the hole in a direction within the plane of the two-dimensional photonic crystal, while the hole 242A is located at least on a portion of a second half-line 252 extending from the gravity center G1 in the direction opposite to the first half-line 251. Injecting electric charges into the active layer generates light, which creates an electric field that encircles the gravity center G1 within the two-dimensional photonic crystal.

Abstract: The present invention intends to provide a surface-emitting laser light source using a two-dimensional photonic crystal in which the efficiency of extracting light in a direction perpendicular to the surface is high. In a laser light source provided with a two-dimensional photonic crystal layer created from a plate-shaped matrix body in which a large number of holes are periodically arranged and an active layer arranged on one side of the two-dimensional photonic crystal layer, the holes are created to be columnar with a predetermined cross-sectional shape such as a circular shape, and the main axis of each of the columnar holes is tilted to a surface of the matrix body. When provided with this two-dimensional photonic crystal layer, the surface-emitting laser source using a two-dimensional photonic crystal has a Q? value (i.e.

Abstract: An objective of the present invention is to provide a laser capable of producing a radially polarized laser beam with an annular cross section. A laser oscillator 60 including an active layer 53 and two-dimensional photonic crystal 55 with circular holes 552 arranged in a square lattice pattern is provided between two electrodes 571 and 572. A first polarization control layer 581, which functions as a half-wave plate, and a second polarization control layer 582, which functions as a half-wave plate with a fast axis 592 extending at an angle of 45° to that of the first polarization control layer 581, are located on the laser oscillator 60. When a voltage is applied between the electrodes, a circumferentially polarized annular laser beam is emitted from the laser oscillator 60. When passing through the first polarization control layer 581 and the second polarization control layer 582, the laser beam is converted to a radially polarized beam.

Abstract: In a metallic structure including a metallic nano-chain with plasmon resonance absorption, a metallic nanoparticle forming the metallic nano-chain is formed in a circular, triangle, or rhomboid shape. The wavelength selectivity can be increased also by forming a closed region by mutually linking all of metallic nanoparticles that are mutually linked with bottlenecks. In a photodetector, a photodetection unit including a current detection probe, a nano-chain unit, and a current detection probe is arranged on a substrate. The nano-chain unit is a metallic structure with plasmon resonance absorption, where metallic nanoparticles are mutually linked with bottlenecks. Each current detection probe has a corner whose tip is formed with a predetermined angle, and this corner is arranged to face the tip of the nano-chain unit, i.e., a corner of the metallic nanoparticle. Photodetection with high wavelength selectivity is performed based on a change in the initial voltage of the current-voltage characteristic.