Patents by Inventor Daigi KAMIMURA
Daigi KAMIMURA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11935762Abstract: There is provided a technique that includes: a first processing module including a first process container in which at least one substrate is processed, a first utility system including a first supply system which supplies a first processing gas into the first process container and a surface of the first utility system is connected or arranged close to the first processing module; and a first vacuum pump arranged at the same level as a first exhaust port of the first process container. The first vacuum pump exhausts an inside of the first process container and includes a first intake port formed laterally at a position substantially facing the first exhaust port of the first process container. A first exhaust pipe configured to substantially linearly bring the first exhaust port into fluid communication with the first intake port and including a first valve installed in a flow path.Type: GrantFiled: August 16, 2022Date of Patent: March 19, 2024Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Daigi Kamimura, Tomoshi Taniyama, Kenji Shirako, Hironori Shimada, Akira Horii, Takayuki Nakada, Norihiro Yamashima
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Publication number: 20240038576Abstract: Described herein is a technique capable of forming a film on a substrate with good uniformity. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: processing a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying a source gas; (b) discharging at least the source gas; (c) supplying a reactive gas; and (d) discharging at least the reactive gas. The substrate is kept stationary while each cycle is performed, and a rotation angle of rotating the substrate is calculated based on the predetermined number of times after each cycle is completed.Type: ApplicationFiled: October 13, 2023Publication date: February 1, 2024Inventor: Daigi KAMIMURA
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Patent number: 11823946Abstract: Described herein is a technique capable of forming a film on a substrate with good uniformity. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: processing a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying a source gas; (b) discharging at least the source gas; (c) supplying a reactive gas; and (d) discharging at least the reactive gas. The substrate is kept stationary while each cycle is performed, and a rotation angle of rotating the substrate is calculated based on the predetermined number of times after each cycle is completed.Type: GrantFiled: March 13, 2020Date of Patent: November 21, 2023Assignee: Kokusai Electric CorporationInventor: Daigi Kamimura
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Publication number: 20230112057Abstract: Described herein is a technique capable of suppressing a deviation in a thickness of a film formed on a substrate. According to one aspect of the technique of the present disclosure, a substrate processing apparatus includes a substrate retainer capable of supporting substrates; a cylindrical process chamber including a discharge part and supply holes; partition parts arranged in the circumferential direction to partition supply chambers communicating with the process chamber through the supply holes; nozzles provided with an ejection hole; and gas supply pipes. The supply chambers includes a first nozzle chamber and a second nozzle chamber, the process gas includes a source gas and an assist gas, the nozzles includes a first nozzle for the assist gas flows and a second nozzle disposed in the second nozzle chamber and through which the source gas flows, and the first nozzle is disposed adjacent to the second nozzle.Type: ApplicationFiled: December 15, 2022Publication date: April 13, 2023Inventors: Hironori SHIMADA, Daigi KAMIMURA
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Publication number: 20230017917Abstract: A technique for reducing cooling time for a substrate includes a substrate processing apparatus that may include: a substrate retainer configured to support a substrate; a heat-insulating unit; a transfer chamber; and a gas supply mechanism to supply a gas into the transfer chamber, the gas supply mechanism including: a first gas supply mechanism to supply the gas into an upper region of the transfer chamber. The substrate retainer is disposed such that the gas flows horizontally through the upper region; and a second gas supply mechanism to supply the gas into a lower region of the transfer chamber. The heat-insulating unit is provided such that the gas flows downward through the lower region. The first gas supply mechanism and the second gas supply mechanism are disposed along a first sidewall of the transfer chamber, and the second gas supply mechanism is disposed lower than the first gas supply mechanism.Type: ApplicationFiled: September 28, 2022Publication date: January 19, 2023Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Takayuki NAKADA, Takashi NOGAMI, Tomoshi TANIYAMA, Daigi KAMIMURA
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Publication number: 20230016879Abstract: A substrate processing apparatus includes a first processing module including a first processing module, a second processing module, a first utility system adjacent to a back surface of the first processing module, and a second utility system adjacent to a back surface of the second processing module, a first exhaust box of the first utility system and a second exhaust box of the second utility system being disposed to face each other across a maintenance area located behind a part of the back surface of the first processing module that is close to the second processing module and behind a part of the back surface of the second processing module that is close to the first processing module, and a first supply box of the first utility system and a second supply box of the second utility system being disposed to face each other across the maintenance area.Type: ApplicationFiled: September 23, 2022Publication date: January 19, 2023Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Daigi KAMIMURA, Tomoshi TANIYAMA, Takashi NOGAMI
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Patent number: 11555246Abstract: Described herein is a technique capable of suppressing a deviation in a thickness of a film formed on a substrate. According to one aspect of the technique of the present disclosure, a substrate processing apparatus includes a substrate retainer capable of supporting substrates; a cylindrical process chamber including a discharge part and supply holes; partition parts arranged in the circumferential direction to partition supply chambers communicating with the process chamber through the supply holes; nozzles provided with an ejection hole; and gas supply pipes. The supply chambers includes a first nozzle chamber and a second nozzle chamber, the process gas includes a source gas and an assist gas, the nozzles includes a first nozzle for the assist gas flows and a second nozzle disposed in the second nozzle chamber and through which the source gas flows, and the first nozzle is disposed adjacent to the second nozzle.Type: GrantFiled: April 30, 2021Date of Patent: January 17, 2023Assignee: Kokusai Electric CorporationInventors: Hironori Shimada, Daigi Kamimura
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Publication number: 20220392783Abstract: There is provided a technique that includes: a first processing module including a first process container in which at least one substrate is processed, a first utility system including a first supply system which supplies a first processing gas into the first process container and a surface of the first utility system is connected or arranged close to the first processing module; and a first vacuum pump arranged at the same level as a first exhaust port of the first process container. The first vacuum pump exhausts an inside of the first process container and includes a first intake port formed laterally at a position substantially facing the first exhaust port of the first process container. A first exhaust pipe configured to substantially linearly bring the first exhaust port into fluid communication with the first intake port and including a first valve installed in a flow path.Type: ApplicationFiled: August 16, 2022Publication date: December 8, 2022Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Daigi KAMIMURA, Tomoshi TANIYAMA, Kenji SHIRAKO, Hironori SHIMADA, Akira HORII, Takayuki NAKADA, Norihiro YAMASHIMA
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Patent number: 11512392Abstract: A substrate processing apparatus includes: a substrate retainer configured to support a substrate; a heat-insulating unit; a transfer chamber; and a gas supply mechanism configured to supply a gas into the transfer chamber, the gas supply mechanism including: a first gas supply mechanism configured to supply the gas into an upper region of the transfer chamber, where the substrate retainer is disposed such that the gas flows horizontally through the upper region; and a second gas supply mechanism configured to supply the gas into a lower region of the transfer chamber, where the heat-insulating unit is provided such that the gas flows downward through the lower region, wherein the first gas supply mechanism and the second gas supply mechanism are disposed along a first sidewall of the transfer chamber, and the second gas supply mechanism is disposed lower than the first gas supply mechanism.Type: GrantFiled: August 29, 2019Date of Patent: November 29, 2022Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Takayuki Nakada, Takashi Nogami, Tomoshi Taniyama, Daigi Kamimura
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Patent number: 11456190Abstract: A substrate processing apparatus includes a first processing module including a first processing module, a second processing module, a first utility system adjacent to a back surface of the first processing module, and a second utility system adjacent to a back surface of the second processing module, a first exhaust box of the first utility system and a second exhaust box of the second utility system being disposed to face each other across a maintenance area located behind a part of the back surface of the first processing module that is close to the second processing module and behind a part of the back surface of the second processing module that is close to the first processing module, and a first supply box of the first utility system and a second supply box of the second utility system being disposed to face each other across the maintenance area.Type: GrantFiled: March 31, 2021Date of Patent: September 27, 2022Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Daigi Kamimura, Tomoshi Taniyama, Takashi Nogami
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Patent number: 11450536Abstract: There is provided a technique that includes: a first processing module including a first process container in which at least one substrate is processed and a substrate loading port installed at a front side of the first processing module; a first utility system including a first supply system configured to supply a first processing gas into the first process container, a surface of the first utility system is connected or arranged close to a rear surface of the first processing module; and a first vacuum-exhauster arranged behind the first processing module and configured to exhaust an inside of the first process container, wherein the first vacuum-exhauster includes an outer side surface configured such that the outer side surface does not protrude more outward than an outer side surface of the first utility system.Type: GrantFiled: March 25, 2021Date of Patent: September 20, 2022Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Daigi Kamimura, Tomoshi Taniyama, Kenji Shirako, Hironori Shimada, Akira Horii, Takayuki Nakada, Norihiro Yamashima
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Publication number: 20210305067Abstract: There is provided a technique that includes: a first processing module including a first process container in which at least one substrate is processed and a substrate loading port installed at a front side of the first processing module; a first utility system including a first supply system configured to supply a first processing gas into the first process container, a surface of the first utility system is connected or arranged close to a rear surface of the first processing module; and a first vacuum-exhauster arranged behind the first processing module and configured to exhaust an inside of the first process container, wherein the first vacuum-exhauster includes an outer side surface configured such that the outer side surface does not protrude more outward than an outer side surface of the first utility system.Type: ApplicationFiled: March 25, 2021Publication date: September 30, 2021Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Daigi KAMIMURA, Tomoshi TANIYAMA, Kenji SHIRAKO, Hironori SHIMADA, Akira HORII, Takayuki NAKADA, Norihiro YAMASHIMA
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Publication number: 20210246554Abstract: Described herein is a technique capable of suppressing a deviation in a thickness of a film formed on a substrate. According to one aspect of the technique of the present disclosure, a substrate processing apparatus includes a substrate retainer capable of supporting substrates; a cylindrical process chamber including a discharge part and supply holes; partition parts arranged in the circumferential direction to partition supply chambers communicating with the process chamber through the supply holes; nozzles provided with an ejection hole; and gas supply pipes. The supply chambers includes a first nozzle chamber and a second nozzle chamber, the process gas includes a source gas and an assist gas, the nozzles includes a first nozzle for the assist gas flows and a second nozzle disposed in the second nozzle chamber and through which the source gas flows, and the first nozzle is disposed adjacent to the second nozzle.Type: ApplicationFiled: April 30, 2021Publication date: August 12, 2021Inventors: Hironori SHIMADA, Daigi KAMIMURA
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Publication number: 20210217634Abstract: A substrate processing apparatus includes a first processing module including a first processing module, a second processing module, a first utility system adjacent to a back surface of the first processing module, and a second utility system adjacent to a back surface of the second processing module, a first exhaust box of the first utility system and a second exhaust box of the second utility system being disposed to face each other across a maintenance area located behind a part of the back surface of the first processing module that is close to the second processing module and behind a part of the back surface of the second processing module that is close to the first processing module, and a first supply box of the first utility system and a second supply box of the second utility system being disposed to face each other across the maintenance area.Type: ApplicationFiled: March 31, 2021Publication date: July 15, 2021Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Daigi KAMIMURA, Tomoshi TANIYAMA, Takashi NOGAMI
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Patent number: 11062918Abstract: A substrate processing apparatus includes a first processing module including a first processing module, a second processing module, a first utility system adjacent to a back surface of the first processing module, and a second utility system adjacent to a back surface of the second processing module, a first exhaust box of the first utility system and a second exhaust box of the second utility system being disposed to face each other across a maintenance area located behind a part of the back surface of the first processing module that is close to the second processing module and behind a part of the back surface of the second processing module that is close to the first processing module, and a first supply box of the first utility system and a second supply box of the second utility system being disposed to face each other across the maintenance area.Type: GrantFiled: September 16, 2019Date of Patent: July 13, 2021Assignee: KOKUSAI ELECTRIC CORPOTATIONInventors: Daigi Kamimura, Tomoshi Taniyama, Takashi Nogami
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Patent number: 11015248Abstract: Described herein is a technique capable of suppressing a deviation in a thickness of a film formed on a substrate. According to one aspect of the technique of the present disclosure, a substrate processing apparatus includes a substrate retainer capable of supporting substrates; a cylindrical process chamber including a discharge part and supply holes; partition parts arranged in the circumferential direction to partition supply chambers communicating with the process chamber through the supply holes; nozzles provided with an ejection hole; and gas supply pipes. The supply chambers includes a first nozzle chamber and a second nozzle chamber, the process gas includes a source gas and an assist gas, the nozzles includes a first nozzle for the assist gas flows and a second nozzle disposed in the second nozzle chamber and through which the source gas flows, and the first nozzle is disposed adjacent to the second nozzle.Type: GrantFiled: May 24, 2019Date of Patent: May 25, 2021Assignee: Kokusai Electric CorporationInventors: Hironori Shimada, Daigi Kamimura
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Patent number: 10998205Abstract: A substrate processing a technology including: a substrate holder; a tubular reactor that houses the substrate holder; an inlet flange connected to the tubular reactor including a plurality of gas introduction ports; a lid that closes a lower opening of the inlet flange in a manner such that the substrate holder can be carried in and out; heater elements disposed along the outer peripheral surface of the inlet flange while avoiding the gas introduction ports; temperature sensors thermally coupled to the inlet flange or any heater element and adapted to detect temperatures; and a temperature controller that divides of the heater elements into groups and controls power supply to the respective heater elements independently for each of the groups based on temperatures detection temperatures detected by the temperature sensors.Type: GrantFiled: September 13, 2019Date of Patent: May 4, 2021Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Tomoyasu Miyashita, Daigi Kamimura, Atsushi Umekawa
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Publication number: 20210043485Abstract: There is provided a technique that includes: a substrate holder; a reaction tube accommodating the substrate holder; a furnace body surrounding the reaction tube; a gas supplier including inlets corresponding to substrates held in the reaction tube and supplying gases from the inlets in parallel to surfaces of the substrates; and a gas exhauster including an outlet facing lateral sides of the substrates and exhausting the gases flowing on the surfaces of the substrates, wherein the substrate holder includes: annular members each arranged concentrically with the rotation axis at a predetermined pitch on planes orthogonal to the rotation axis; columns each arranged along a circumscribed circle substantially coinciding with outer circumferences of the annular members, and holding the plurality of annular members; and supports supporting the substrates at positions between two adjacent annular members.Type: ApplicationFiled: August 7, 2020Publication date: February 11, 2021Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Shuhei Saido, Hironori Shimada, Tomoshi Taniyama, Daigi Kamimura, Takafumi Sasaki
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Publication number: 20200219756Abstract: Described herein is a technique capable of forming a film on a substrate with good uniformity. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: processing a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying a source gas; (b) discharging at least the source gas; (c) supplying a reactive gas; and (d) discharging at least the reactive gas. The substrate is kept stationary while each cycle is performed, and a rotation angle of rotating the substrate is calculated based on the predetermined number of times after each cycle is completed.Type: ApplicationFiled: March 13, 2020Publication date: July 9, 2020Inventor: Daigi KAMIMURA
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Patent number: D939459Type: GrantFiled: December 10, 2019Date of Patent: December 28, 2021Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Hironori Shimada, Daigi Kamimura, Tomoshi Taniyama, Shuhei Saido, Takafumi Sasaki