Abstract: When a self-cleaning method for an aligner is carried out, a reflecting plate having a convex lens portion is set in an original plate holder, and exposure light rays are irradiated from a light source. The surface of the lens portion is coated with a reflective film. The light rays are reflected by the reflecting plate, diffused, and emitted onto the surface of a condenser lens, thereby breaking down and removing contaminants that are adhered to the surface of the condenser lens. The light rays also enter the interior of the condenser lens to clean away contaminants that are adhered to locations other than a normal exposure path. When a concave mirror and/or a reflecting plate having 50% transmittance is used as the reflecting plate, the emission range of the light rays (i.e., the locations that are cleaned) can be changed.

Abstract: When a self-cleaning method for an aligner is carried out, a reflecting plate having a convex lens portion is set in an original plate holder, and exposure light rays are irradiated from a light source. The surface of the lens portion is coated with a reflective film. The light rays are reflected by the reflecting plate, diffused, and emitted onto the surface of a condenser lens, thereby breaking down and removing contaminants that are adhered to the surface of the condenser lens. The light rays also enter the interior of the condenser lens to clean away contaminants that are adhered to locations other than a normal exposure path. When a concave mirror and/or a reflecting plate having 50% transmittance is used as the reflecting plate, the emission range of the light rays (i.e., the locations that are cleaned) can be changed.

Abstract: When a self-cleaning method for an aligner is carried out, a reflecting plate having a convex lens portion is set in an original plate holder, and exposure light rays are irradiated from a light source. The surface of the lens portion is coated with a reflective film. The light rays are reflected by the reflecting plate, diffused, and emitted onto the surface of a condenser lens, thereby breaking down and removing contaminants that are adhered to the surface of the condenser lens. The light rays also enter the interior of the condenser lens to clean away contaminants that are adhered to locations other than a normal exposure path. When a concave mirror and/or a reflecting plate having 50% transmittance is used as the reflecting plate, the emission range of the light rays (i.e., the locations that are cleaned) can be changed.

Abstract: A phase shift mask comprises first and second mask patterns. The first mask pattern is a backing film enabling a first optical image to be formed on a substrate. The first optical image forms a resist pattern having a width that changes depending on the distance between the phase shift mask and the substrate. The second mask pattern is a semi-transmissive film enabling a second optical image to be formed on the substrate. The second optical image can form a resist pattern having a width that changes depending on the distance between the phase shift mask and the substrate and on a thickness of the semi-transmissive film. The duty ratio of the second mask is set so that the rate at which the width of the first optical image varies will be the same as the rate at which the width of the second optical image varies.

Abstract: A phase shift mask comprises first and second mask patterns. The first mask pattern is a backing film enabling a first optical image to be formed on a substrate. The first optical image forms a resist pattern having a width that changes depending on the distance between the phase shift mask and the substrate. The second mask pattern is a semi-transmissive film enabling a second optical image to be formed on the substrate. The second optical image can form a resist pattern having a width that changes depending on the distance between the phase shift mask and the substrate and on a thickness of the semi-transmissive film. The duty ratio of the second mask is set so that the rate at which the width of the first optical image varies will be the same as the rate at which the width of the second optical image varies.

Abstract: A photomask for use in a semiconductor fabrication process, comprises a plurality of first mask patterns for transferring resist patterns, and second mask patterns for restraining an optical proximity effect, each having a width not larger than a resolution limit. The second mask patterns are formed in a line-like shape, and disposed so as to link together the plurality of the first mask patterns. As a result of use of the second mask patterns in the line-like shape, a fewer parameters may be added in simulation of resist patterns. Thus, it becomes possible to provide the photomask for efficiently performing simulation and forming suitable resist patterns. Further, the photomask can be used in a semiconductor fabrication process.

Abstract: To an original plate holder 16 to which an original pattern plate 15 is set in ordinary exposure, a transmittable plate 20 having a concave-shaped concave portion 22 formed at a middle of a quartz glass plate is set in self-cleaning and irradiated with ultraviolet light emitted from a light source 11. The ultraviolet light is diffused through the concave lens of the transmittable plate 20 and an entire surface of a projection lens 17 is irradiated with it. Accordingly, molecular bonds of a contaminant adhering to the surface of the projection lens 17 are cut off with strong energy of the ultraviolet light, so that the contaminant is decomposed, vaporized, and then removed.

Abstract: A photomask for use in a semiconductor fabrication process, comprises a plurality of first mask patterns for transferring resist patterns, and second mask patterns for restraining an optical proximity effect, each having a width not larger than a resolution limit. The second mask patterns are formed in a line-like shape, and disposed so as to link together the plurality of the first mask patterns. As a result of use of the second mask patterns in the line-like shape, a fewer parameters may be added in simulation of resist patterns. Thus, it becomes possible to provide the photomask for efficiently performing simulation and forming suitable resist patterns. Further, the photomask can be used in a semiconductor fabrication process.

Abstract: There is provided a method of measuring defocusing when a semiconductor wafer is exposed to light. With the method, a resist is exposed to light by deviating a focus of the light by a given distance in relation to the semiconductor wafer with the resist applied thereto, and after development of the resist, resist patterns for measurement are formed. Based on respective lengths of the resist patterns for measurement, defocusing in relation to the resist is found.

Abstract: A photomask for use in a semiconductor fabrication process, comprises a plurality of first mask patterns for transferring resist patterns, and second mask patterns for restraining an optical proximity effect, each having a width not larger than a resolution limit. The second mask patterns are formed in a line-like shape, and disposed so as to link together the plurality of the first mask patterns. As a result of use of the second mask patterns in the line-like shape, a fewer parameters may be added in simulation of resist patterns. Thus, it becomes possible to provide the photomask for efficiently performing simulation and forming suitable resist patterns. Further, the photomask can be used in a semiconductor fabrication process.

Abstract: To an original plate holder 16 to which an original pattern plate 15 is set in ordinary exposure, a transmittable plate 20 having a concave-shaped concave portion 22 formed at a middle of a quartz glass plate is set in self-cleaning and irradiated with ultraviolet light emitted from a light source 11. The ultraviolet light is diffused through the concave lens of the transmittable plate 20 and an entire surface of a projection lens 17 is irradiated with it. Accordingly, molecular bonds of a contaminant adhering to the surface of the projection lens 17 are cut off with strong energy of the ultraviolet light, so that the contaminant is decomposed, vaporized, and then removed.

Abstract: There is provided a method of measuring defocusing when a semiconductor wafer is exposed to light. With the method, a resist is exposed to light by deviating a focus of the light by a given distance in relation to the semiconductor wafer with the resist applied thereto, and after development of the resist, resist patterns for measurement are formed. Based on respective lengths of the resist patterns for measurement, defocusing in relation to the resist is found.

Abstract: A photomask for use in a semiconductor fabrication process, comprises a plurality of first mask patterns for transferring resist patterns, and second mask patterns for restraining an optical proximity effect, each having a width not larger than a resolution limit. The second mask patterns are formed in a line-like shape, and disposed so as to link together the plurality of the first mask patterns. As a result of use of the second mask patterns in the line-like shape, a fewer parameters may be added in simulation of resist patterns. Thus, it becomes possible to provide the photomask for efficiently performing simulation and forming suitable resist patterns. Further, the photomask can be used in a semiconductor fabrication process.