Abstract: A method for manufacturing a ruthenium wiring including (i) treating a metal surface including ruthenium using a first chemical solution including a compound having a functional group capable of coordinating to a ruthenium atom, and (ii) carrying out an etching treatment on the metal surface including ruthenium treated with the first chemical solution, using a second chemical solution.

Abstract: An etching solution for selectively performing an etching process on a compound represented by General Formula Si1-xGex, in which x is more than 0 and less than 1, with respect to Si, Ge, and oxides thereof, the etching solution including hydrofluoric acid, nitric acid, and water, in which a content ratio of the hydrofluoric acid in the entire etching solution is 0.002% by mass or more and 1.0% by mass or less, a content ratio of the nitric acid in the entire etching solution is 10% by mass or more, and a content ratio of the water in the entire etching solution is 40% by mass or less.

Abstract: A method for manufacturing a ruthenium wiring including (i) treating a metal surface including ruthenium using a first chemical solution including a compound having a functional group capable of coordinating to a ruthenium atom, and (ii) carrying out an etching treatment on the metal surface including ruthenium treated with the first chemical solution, using a second chemical solution.

Abstract: An etching solution for selectively performing an etching process on a compound represented by General Formula Si1-xGex, in which x is more than 0 and less than 1, with respect to Si, Ge, and oxides thereof, the etching solution including hydrofluoric acid, nitric acid, and water, in which a content ratio of the hydrofluoric acid in the entire etching solution is 0.002% by mass or more and 1.0% by mass or less, a content ratio of the nitric acid in the entire etching solution is 10% by mass or more, and a content ratio of the water in the entire etching solution is 40% by mass or less.

Abstract: Provided are a method for treating a substrate, including rinsing a surface of a substrate in which a pattern having an aspect ratio of 10 or more is provided on the surface with a rinsing liquid, in which the rinsing liquid includes an organic solvent (S1) having a vapor pressure at 20° C. of 25 mmHg or less; and a rinsing liquid for rinsing the surface of the substrate in which a pattern having an aspect ratio of 10 or more is provided on the surface, including an organic solvent (S1) having a vapor pressure at 20° C. of 25 mmHg or less.

Abstract: A surface treatment agent capable of effectively preventing pattern collapse of an inorganic pattern or a resin pattern provided on a substrate, and a surface treatment method using such a surface treatment agent. The surface treatment agent includes a silylation agent and a nitrogen-containing heterocyclic compound which does not include a silicon atom.

Abstract: To provide a surface treatment method capable of highly hydrophobizing (silylating) a surface of a treatment target while deterioration of polyvinyl chloride is suppressed when surface treatment of the treatment target such as an inorganic pattern and a resin pattern is carried out using a device having a liquid contact portion provided with a member made of polyvinyl chloride, and also provide a surface treatment liquid suitably used for the surface treatment method. A surface treatment liquid used for the surface treatment method includes a silylating agent (A) and a solvent (S), the silylating agent (A) does not have an alkoxy group bonded to a silicon atom, and the solvent (S) does not have a hydroxyl group bonded to a carbon atom. A value of dH in Hansen solubility parameters (HSP) in the solvent (S) is 3.2 MPa1/2 or less or 10.5 MPa1/2 or more. Relative Energy Difference represented by Ra/R0 is 1.

Abstract: A process removes metal impurities from an untreated chemical liquid, which includes a silylating agent. The process includes providing a strongly acidic cation-exchange resin in which a cation-exchange group is immobilized to a resin membrane or an integral structure of a particle-removing membrane and an ion exchange resin membrane in which a strongly acidic cation-exchange resin has been chemically introduced onto surfaces of pores in a porous resin. The wettability of the ion exchange resin membrane is thereafter improved by contacting the ion-exchange resin membrane with an organic solvent. The metal impurities are then removed from the untreated chemical liquid by passing the untreated chemical liquid through the ion-exchange resin membrane.

Abstract: A film-forming material including a metal oxide such as a SiO2 film on the surface of a substrate, in which foreign substances, such as fine particles, are generated with difficulty while being stored, and a method for forming a film, in which the method includes forming a film on the surface of a substrate using the film-forming material. The film-forming material includes a metal compound capable of generating a hydroxyl group upon hydrolysis dissolved in an organic solvent that does not have a functional group that reacts with the metal compound. The organic solvent includes a solvent having a value of Log P of from 0 to 3.5.

Abstract: A surface treatment liquid that can effectively prevent pattern collapse of, in particular, a silicon pattern and a surface treatment process using the surface treatment liquid. The surface treatment liquid contains a water repellent agent and an acid imide. The surface treatment process includes exposing a surface of a substrate to the surface treatment liquid to thereby hydrophobize the substrate surface.

Abstract: A surface treatment agent capable of effectively preventing pattern collapse of an inorganic pattern or a resin pattern provided on a substrate, and a surface treatment method using such a surface treatment agent. The surface treatment agent includes a silylation agent and a nitrogen-containing heterocyclic compound which does not include a silicon atom.

Abstract: A surface treatment liquid that can effectively prevent pattern collapse of, in particular, a silicon pattern and a surface treatment process using the surface treatment liquid. The surface treatment liquid contains a water repellent agent and an acid imide. The surface treatment process includes exposing a surface of a substrate to the surface treatment liquid to thereby hydrophobize the substrate surface.

Abstract: A process for preparing a chemical liquid of a silylating agent that has a reduced metal impurity concentration, and a surface treatment method using a chemical liquid of a silylating agent obtained by the preparation process. The process includes reducing metal impurities contained in an untreated chemical liquid of a silylating agent using an ion-exchange resin membrane that has been brought into contact with an organic solvent in advance. A surface treatment method that hydrophobizes a substrate surface includes exposing, to the substrate surface, a chemical liquid of a silylating agent obtained by the above process for preparing a chemical liquid of a silylating agent.

Abstract: A stripping solution for photolithography which can effectively strip away residual materials of a photoresist pattern and etching residual materials, and has excellent anticorrosion properties on SiO2 and a variety of metal materials; and a method for forming a pattern using the stripping solution. A prescribed basic compound is used as a counter amine of the hydrofluoric acid contained in the stripping solution for photolithography, and the stripping solution for photolithography is adjusted to a pH measured at 23° C. of not more than 6.0 or 8.5 or more.

Abstract: A nonaqueous cleaning liquid comprising a fluoroalkanol, a quaternary ammonium hydroxide, and an organic solvent. Compounds represented by formulae (1) and (2). Fluoroalkanol compounds include (1) H(CF2)aCH2—OH and (2) F(CF2)b(CH2)c—OH In which a and b are each an integer of from 2 to 6, and c is an integer of 1 or 2.

Abstract: A film-forming material including a metal oxide such as a SiO2 film on the surface of a substrate, in which foreign substances, such as fine particles, are generated with difficulty while being stored, and a method for forming a film, in which the method includes forming a film on the surface of a substrate using the film-forming material. The film-forming material includes a metal compound capable of generating a hydroxyl group upon hydrolysis dissolved in an organic solvent that does not have a functional group that reacts with the metal compound. The organic solvent includes a solvent having a value of Log P of from 0 to 3.5.

Abstract: A method of cleaning a substrate having a metal layer including copper or a copper-containing alloy, the method including cleaning the substrate using a cleaning liquid that includes a mercapto compound represented by one or both of the following formulas (1) and (2), and a solvent containing water and a water-soluble organic solvent: in which R represents a substituent group; m is an integer of 1 to 3; and n is an integer of 0 to 3, when m is 2 or 3, R may be the same or different; HS—(CH2)x—OH??(2), in which x is an integer of no less than 3.

Abstract: A stripping solution for photolithography which can effectively strip away residual materials of a photoresist pattern and etching residual materials, and has excellent anticorrosion properties on SiO2 and a variety of metal materials; and a method for forming a pattern using the stripping solution. A prescribed basic compound is used as a counter amine of the hydrofluoric acid contained in the stripping solution for photolithography, and the stripping solution for photolithography is adjusted to a pH measured at 23° C. of not more than 6.0 or 8.5 or more.

Abstract: A nonaqueous cleaning liquid comprising a fluoroalkanol, a quaternary ammonium hydroxide, and an organic solvent. Compounds represented by formulae (1) and (2). Fluoroalkanol compounds include (1) H(CF2)aCH2—OH and (2) F(CF2)b(CH2)c—OH In which a and b are each an integer of from 2 to 6, and c is an integer of 1 or 2.

Abstract: A method of cleaning a substrate having a metal layer including copper or a copper-containing alloy, the method including cleaning the substrate using a cleaning liquid that includes a mercapto compound represented by one or both of the following formulas (1) and (2), and a solvent containing water and a water-soluble organic solvent: in which R represents a substituent group; m is an integer of 1 to 3; and n is an integer of 0 to 3, when m is 2 or 3, R may be the same or different; HS—(CH2)x—OH??(2), in which x is an integer of no less than 3.