Abstract: Disclosed are silazane compounds having two fluoroalkyl groups, represented by the following general formula (1): wherein Rf and Rf? are each a fluoroalkyl group, R1 is a hydrogen atoms or an aliphatic monovalent hydrocarbon group, R2 and R3 are each an aliphatic monovalent hydrocarbon group, R4 is a hydrogen atom or an aliphatic monovalent hydrocarbon group, a and b are each 0 or 1, m, n and p are each an integer of 0 to 6, q is an integer of 1 to 6, and r is 1 or 2. By treating an inorganic material with the silazane compound having two fluoroalkyl groups, high water and oil repellency and high sliding properties can be imparted to the inorganic material in good balance.

Abstract: Alkoxysilane compounds having two fluoroalkyl groups and represented by the formula (1): wherein Rf and Rf? are each a fluoroalkyl group of 1 to 10 carbon atoms, R1 is a hydrogen atom or an aliphatic monovalent hydrocarbon group of 1 to 6 carbon atoms, R2 and R3 are each methyl group or ethyl group, X and Y are each an ether linkage or an ester linkage, a and b are each 0 or 1, m, n and p are each an integer of 0 to 6, q is an integer of 1 to 6, and r is an integer of 0 to 2. By treating an inorganic material with the alkoxysilane compound having ether linkage and two fluoroalkyl groups, high water and oil repellency and high sliding properties are imparted to the inorganic material. The alkoxysilane compounds are easily purified, owing to enhanced volatility by the branched structure.

Abstract: A circular mold-forming substrate of 125-300 mm diameter having a surface on which a topological pattern is to be formed is provided wherein the thickness of the substrate has a variation of up to 2 ?m within a circle having a diameter of 125 mm.

Abstract: A storage container for containing a photomask-forming synthetic quartz glass substrate comprises inner walls facing the front and back surfaces of the glass substrate, and reservoirs provided on the container inner walls for receiving an absorber for components outgassing from the container. A ratio A/B is in the range of 1.0-120 m2/cm2 provided that A is the product (m2) of the total weight (g) of the absorber multiplied by the BET specific surface area (m2/g) of the absorber and B is the total area (cm2) of the front and back surfaces of the glass substrate.

Abstract: A polishing slurry comprising a collagen derivative and a colloidal solution is effective for polishing of synthetic quartz glass substrates. It prevents formation of defects having a size that can be detected by a high-sensitivity flaw detector.

Abstract: A synthetic quartz glass substrate has a surface of 6 inch squares including a central surface area of 132 mm squares. The central surface area of 132 mm squares has a flatness of up to 50 nm. A frame region obtained by subtracting the central surface area of 132 mm squares from the central surface area of 148 mm squares has a flatness of up to 150 nm.

Abstract: A synthetic quartz glass substrate is prepared by (1) polishing a synthetic quartz glass substrate with a polishing slurry comprising colloidal particles, an ionic organic compound having an electric charge of the same type as the colloidal particles, and water, and (2) immersing the polished substrate in an acidic or basic solution for etching the substrate surface to a depth of 0.001-1 nm. The method produces a synthetic quartz glass substrate while preventing formation of defects of a size that is detectable by the high-sensitivity defect inspection tool, and providing the substrate with a satisfactory surface roughness.

Abstract: A photomask-forming glass substrate having a square major surface is provided wherein two strip regions are defined on the major surface near a pair of opposed sides such that each region spans between 2 mm and 10 mm inward of the side and excludes end portions extending 2 mm inward from the opposed ends of the side, a least squares plane is computed for each of the two strip regions, the angle included between normal lines to the least squares planes of two strip regions is within 10 seconds, and the height difference between two strip regions is up to 0.5 ?m.

Abstract: Disclosed is a polishing agent for synthetic quartz glass substrates, which is characterized by containing a colloidal solution of a colloidal silica or the like having a colloid concentration of 20-50% by mass, and a polycarboxylic acid polymer, an acidic amino acid, a phenol or a glycosaminoglycan.

Abstract: Disclosed is a method of processing a synthetic quartz glass substrate for a semiconductor, wherein a polishing part of a rotary small-sized processing tool is put in contact with a surface of the synthetic quartz glass substrate in a contact area of 1 to 500 mm2, and is scanningly moved on the substrate surface while being rotated so as to polish the substrate surface. When the method is applied to the production of a synthetic quartz glass such as one for a photomask substrate for use in photolithography which is important to the manufacture of ICs or the like, a substrate having an extremely excellent flatness and capable of being used even with the EUV lithography can be obtained comparatively easily and inexpensively.

Abstract: A storage container for containing a photomask-forming synthetic quartz glass substrate comprises inner walls facing the front and back surfaces of the glass substrate, and reservoirs provided on the container inner walls for receiving an absorber for components outgassing from the container. A ratio A/B is in the range of 1.0-120 m2/cm2 provided that A is the product (m2) of the total weight (g) of the absorber multiplied by the BET specific surface area (m2/g) of the absorber and B is the total area (cm2) of the front and back surfaces of the glass substrate.