Patents by Inventor Daiki Teshima

Daiki Teshima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9711390
    Abstract: A method of forming a shallow trench isolation trench in a semiconductor substrate is described. The method includes forming a trench in a region of the substrate, forming a liner in the trench, wherein the liner includes a first dielectric material, adhering a halogen element to the liner, forming a second dielectric material in the trench, annealing the first dielectric material and the second dielectric material, exposing a portion of a surface of the second dielectric material, and isotropically etching the exposed portion of the surface of the second dielectric material to form an air gap in the shallow trench isolation trench.
    Type: Grant
    Filed: May 21, 2015
    Date of Patent: July 18, 2017
    Assignee: SanDisk Technologies LLC
    Inventors: Shinjiro Umehara, Daiki Teshima
  • Publication number: 20160343608
    Abstract: A method of forming a shallow trench isolation trench in a semiconductor substrate is described. The method includes forming a trench in a region of the substrate, forming a liner in the trench, wherein the liner includes a first dielectric material, adhering a halogen element to the liner, forming a second dielectric material in the trench, annealing the first dielectric material and the second dielectric material, exposing a portion of a surface of the second dielectric material, and isotropically etching the exposed portion of the surface of the second dielectric material to form an air gap in the shallow trench isolation trench.
    Type: Application
    Filed: May 21, 2015
    Publication date: November 24, 2016
    Applicant: SANDISK TECHNOLOGIES INC.
    Inventors: Shinjiro Umehara, Daiki Teshima