Patents by Inventor Daishi SHIOJIRI

Daishi SHIOJIRI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for producing AlN whiskers, AlN whisker bodies, AlN whiskers, resin molded body, and method for producing resin molded body
    Patent number: 11939267
    Abstract: A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al2O3 substrate placed in the reaction chamber.
    Type: Grant
    Filed: May 2, 2022
    Date of Patent: March 26, 2024
    Assignee: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
    Inventors: Toru Ujihara, Yukihisa Takeuchi, Daishi Shiojiri, Masaki Matsumoto, Hiroshi Saito, Ikuo Hayashi
  • METHOD AND APPARATUS FOR PRODUCING ALN WHISKERS , ALN WHISKER BODIES, ALN WHISKERS, RESIN MOLDED BODY, AND METHOD FOR PRODUCING RESIN MOLDED BODY
    Publication number: 20220259108
    Abstract: A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al2O3 substrate placed in the reaction chamber.
    Type: Application
    Filed: May 2, 2022
    Publication date: August 18, 2022
    Applicant: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
    Inventors: Toru UJIHARA, Yukihisa TAKEUCHI, Daishi SHIOJIRI, Masaki MATSUMOTO, Hiroshi SAITO, Ikuo HAYASHI
  • Method and apparatus for producing AlN whiskers, AlN whisker bodies, AlN whiskers, resin molded body, and method for producing resin molded body
    Patent number: 11345640
    Abstract: A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al2O3 substrate placed in the reaction chamber.
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: May 31, 2022
    Assignee: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
    Inventors: Toru Ujihara, Yukihisa Takeuchi, Daishi Shiojiri, Masaki Matsumoto, Hiroshi Saito, Ikuo Hayashi
  • METHOD AND APPARATUS FOR PRODUCING ALN WHISKERS, ALN WHISKER BODIES, ALN WHISKERS, RESIN MOLDED BODY, AND METHOD FOR PRODUCING RESIN MOLDED BODY
    Publication number: 20200095170
    Abstract: A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al2O3 substrate placed in the reaction chamber.
    Type: Application
    Filed: March 16, 2018
    Publication date: March 26, 2020
    Applicant: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
    Inventors: Toru UJIHARA, Yukihisa TAKEUCHI, Daishi SHIOJIRI, Masaki MATSUMOTO, Hiroshi SAITO, Ikuo HAYASHI