Patents by Inventor Daisuke Ebi
Daisuke Ebi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9080251Abstract: A velocity of Ar gas flow passing through between a lower end of a cylindrical body and a thermal shielding body is influenced by arrangement of a pulling path of single crystal silicon, a cylindrical body, and a thermal shielding body. Accordingly, the velocity of the Ar gas flow passing through between a lower end of the cylindrical body and the thermal shielding body is controlled by adjusting a relative position of the pulling path of the single crystal silicon, the cylindrical body, and the thermal shielding body. As described above, dust falling off to silicon melt can be reduced, thereby preventing deterioration in quality of the single crystal silicon.Type: GrantFiled: May 17, 2012Date of Patent: July 14, 2015Assignee: SUMCO TECHXIV CORPORATIONInventors: Makato Kamogawa, Koichi Shimomura, Yoshiyuki Suzuki, Daisuke Ebi
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Patent number: 8769993Abstract: Provided is a silicon electromagnetic casting apparatus that is capable of stably producing polycrystalline silicon used as a solar cell substrate material, having a bottomless cold mold and an induction heating coil, the apparatus for pulling down the silicon melted through electromagnetic induction heating by means of the induction coil and solidifying the silicon melt; further including a plasma torch for generating a transferable plasma arc and a top heater configured so as to face a top surface of the molten silicon, the top heater for generating heat through electromagnetic induction by means of the induction coil. The apparatus enables, upon production of a high quality polycrystalline silicon ingot as a solar cell substrate material along with plasma heating, stable production thereof without cracking in a final solidification portion.Type: GrantFiled: November 17, 2010Date of Patent: July 8, 2014Assignee: Sumco CorporationInventors: Daisuke Ebi, Mitsuo Yoshihara
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Publication number: 20130133374Abstract: Provided is a silicon electromagnetic casting apparatus that is capable of stably producing polycrystalline silicon used as a solar cell substrate material, having a bottomless cold mold and an induction heating coil, the apparatus for pulling down the silicon melted through electromagnetic induction heating by means of the induction coil and solidifying the silicon melt; further including a plasma torch for generating a transferable plasma arc and a top heater configured so as to face a top surface of the molten silicon, the top heater for generating heat through electromagnetic induction by means of the induction coil. The apparatus enables, upon production of a high quality polycrystalline silicon ingot as a solar cell substrate material along with plasma heating, stable production thereof without cracking in a final solidification portion.Type: ApplicationFiled: November 17, 2010Publication date: May 30, 2013Applicant: Sumco CorporationInventors: Daisuke Ebi, Mitsuo Yoshihara
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Patent number: 8404046Abstract: A velocity of Ar gas flow passing through between a lower end of a cylindrical body and a thermal shielding body is influenced by arrangement of a pulling path of single crystal silicon, a cylindrical body, and a thermal shielding body. Accordingly, the velocity of the Ar gas flow passing through between a lower end of the cylindrical body and the thermal shielding body is controlled by adjusting a relative position of the pulling path of the single crystal silicon, the cylindrical body, and the thermal shielding body. As described above, dust falling off to silicon melt can be reduced, thereby preventing deterioration in quality of the single crystal silicon.Type: GrantFiled: June 27, 2006Date of Patent: March 26, 2013Assignee: Sumco Techxiv CorporationInventors: Makato Kamogawa, Koichi Shimomura, Yoshiyuki Suzuki, Daisuke Ebi
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Publication number: 20120222613Abstract: A velocity of Ar gas flow passing through between a lower end of a cylindrical body and a thermal shielding body is influenced by arrangement of a pulling path of single crystal silicon, a cylindrical body, and a thermal shielding body. Accordingly, the velocity of the Ar gas flow passing through between a lower end of the cylindrical body and the thermal shielding body is controlled by adjusting a relative position of the pulling path of the single crystal silicon, the cylindrical body, and the thermal shielding body. As described above, dust falling off to silicon melt can be reduced, thereby preventing deterioration in quality of the single crystal silicon.Type: ApplicationFiled: May 17, 2012Publication date: September 6, 2012Applicant: SUMCO TECHXIV KABUSHIKI KAISHAInventors: Makato Kamogawa, Koichi Shimomura, Yoshiyuki Suzuki, Daisuke EBI
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Patent number: 8002893Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.Type: GrantFiled: December 23, 2008Date of Patent: August 23, 2011Assignee: Komatsu Denshi Kinzoku Kabushiki KaishaInventors: Daisuke Ebi, Kentaro Nakamura, Kengo Hayashi, Yoshinobu Hiraishi, Shigeo Morimoto, Hiroshi Monden
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Patent number: 7727334Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.Type: GrantFiled: May 31, 2007Date of Patent: June 1, 2010Assignee: Sumco Techxiv CorporationInventors: Hiroshi Inagaki, Shigeki Kawashima, Makoto Kamogawa, Toshirou Kotooka, Toshiaki Saishoji, Daisuke Ebi, Kentaro Nakamura, Kengo Hayashi, Yoshinobu Hiraishi, Shigeo Morimoto, Hiroshi Monden, Tadayuki Hanamoto, Tadashi Hata
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Publication number: 20090229512Abstract: A velocity of Ar gas flow passing through between a lower end of a cylindrical body and a thermal shielding body is influenced by arrangement of a pulling path of single crystal silicon, a cylindrical body, and a thermal shielding body. Accordingly, the velocity of the Ar gas flow passing through between a lower end of the cylindrical body and the thermal shielding body is controlled by adjusting a relative position of the pulling path of the single crystal silicon, the cylindrical body, and the thermal shielding body. As described above, dust falling off to silicon melt can be reduced, thereby preventing deterioration in quality of the single crystal silicon.Type: ApplicationFiled: June 27, 2006Publication date: September 17, 2009Applicant: SUMCO TECHXIV CORPORATIONInventors: Makato Kamogawa, Koichi Shimomura, Yoshiyuki Suzuki, Daisuke Ebi
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Publication number: 20090173272Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.Type: ApplicationFiled: December 23, 2008Publication date: July 9, 2009Applicant: KOMATSU DENSHI KINOZOKU KABUSHIKI KAISHAInventors: Hiroshi Inagaki, Shigeki Kawashima, Makoto Kamogawa, Toshirou Kotooka, Toshiaki Saishoji, Daisuke Ebi, Kentaro Nakamura, Kengo Hayashi, Yoshinobu Hiraishi, Shigeo Morimoto, Hiroshi Monden, Tadayuki Hanamoto, Tadashi Hata
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Publication number: 20080311019Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.Type: ApplicationFiled: October 31, 2007Publication date: December 18, 2008Applicant: Komatsu Denshi Kinzoku Kabushiki KaishaInventors: Hiroshi Inagaki, Shigeki Kawashima, Makoto Kamogawa, Toshirou Kotooka, Toshiaki Saishoji, Daisuke Ebi, Kentaro Nakamura, Kengo Hayashi, Yoshinobu Hiraishi, Shigeo Morimoto, Hiroshi Monden, Tadayuki Hanamoto, Tadashi Hata
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Publication number: 20080311021Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.Type: ApplicationFiled: October 31, 2007Publication date: December 18, 2008Applicant: Komatsu Denshi Kinzoku Kabushiki KaishaInventors: Hiroshi Inagaki, Shigeki Kawashima, Makoto Kamogawa, Toshirou Kotooka, Toshiaki Saishoji, Daisuke Ebi, Kentaro Nakamura, Kengo Hayashi, Yoshinobu Hiraishi, Shigeo Morimoto, Hiroshi Monden, Tadayuki Hanamoto, Tadashi Hata
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Publication number: 20080115720Abstract: A semiconductor single crystal manufacturing apparatus and method are provided which are capable of improving the speed of designing and arranging a silicon single crystal manufacturing apparatus while reducing labor by making it possible to instantaneously find optimum design values and optimum arrangement for a cooler without requiring a lot of labor or time, regardless of a housing structure of a CZ furnace, in-furnace members' configuration, and manufacturing conditions. Stable manufacture of defect-free silicon single crystals is also made possible by designing and arranging the cooler such that when a heat absorption amount of the cooler is denoted by Q and a semiconductor single crystal radius is denoted by r, the heat absorption amount of the cooler Q satisfies r2/1100?Q?r2/400, or alternatively Q satisfies r2.7/20500?Q?r2.7/19300.Type: ApplicationFiled: November 7, 2007Publication date: May 22, 2008Applicant: SUMCO TECHXIV KABUSHIKI KAISHAInventors: Toshiaki Saishoji, Koichi Shimomura, Ryouta Suewaka, Daisuke Ebi
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Publication number: 20070256625Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends,there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.Type: ApplicationFiled: May 31, 2007Publication date: November 8, 2007Applicant: Komatsu Denshi Kinzoku Kabushiki KaishaInventors: Hiroshi Inagaki, Shigeki Kawashima, Makoto Kamogawa, Toshirou Kotooka, Toshiaki Saishoji, Daisuke Ebi, Kentaro Nakamura, Kengo Hayashi, Yoshinobu Hiraishi, Shigeo Morimoto, Hiroshi Monden, Tadayuki Hanamoto, Tadashi Hata
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Patent number: 7244309Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.Type: GrantFiled: June 7, 2005Date of Patent: July 17, 2007Assignee: Sumco TechXIV CorporationInventors: Daisuke Ebi, Shigeo Morimoto
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Patent number: 6977010Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.Type: GrantFiled: January 7, 2003Date of Patent: December 20, 2005Assignee: Komatsu Denshi Kinzoku Kabushiki KaishaInventors: Hiroshi Inagaki, Shigeki Kawashima, Makoto Kamogawa, Toshirou Kotooka, Toshiaki Saishoji, Daisuke Ebi, Kentaro Nakamura, Kengo Hayashi, Yoshinobu Hiraishi, Shigeo Morimoto, Hiroshi Monden, Tadayuki Hanamoto, Tadashi Hata
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Publication number: 20050268840Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.Type: ApplicationFiled: June 7, 2005Publication date: December 8, 2005Applicant: Komatsu Denshi Kinzoku Kabushiki KaishaInventors: Hiroshi Inagaki, Shigeki Kawashima, Makoto Kamogawa, Toshirou Kotooka, Toshiaki Saishoji, Daisuke Ebi, Kentaro Nakamura, Kengo Hayashi, Yoshinobu Hiraishi, Shigeo Morimoto, Hiroshi Monden, Tadayuki Hanamoto, Tadashi Hata
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Publication number: 20030154907Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.Type: ApplicationFiled: January 7, 2003Publication date: August 21, 2003Applicant: Komatsu Denshi Kinzoku Kabushiki KaishaInventors: Hiroshi Inagaki, Shigeki Kawashima, Makoto Kamogawa, Toshirou Kotooka, Toshiaki Saishoji, Daisuke Ebi, Kentaro Nakamura, Kengo Hayashi, Yoshinobu Hiraishi, Shigeo Morimoto, Hiroshi Monden, Tadayuki Hanamoto, Tadashi Hata
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Patent number: 6569236Abstract: A device for producing single-crystal ingot, provided with coolers (19) using a piping system through which cooling water failure caused by water leakage and at the same time to find out conditions for maximizing a production efficiency, the coolers (19) are disposed at portions of the inner sides of thermal shielding elements (18) and the lower ends (19a) of cooling pipes are so set as to be positioned up to 150 mm high from the surface (12a) of molten silicon liquid.Type: GrantFiled: September 27, 2001Date of Patent: May 27, 2003Assignee: Komatsu Denshi Kinzoku Kabushiki KaishaInventors: Shigeo Morimoto, Hiroshi Monden, Daisuke Ebi, Toshirou Kotooka
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Publication number: 20020144641Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.Type: ApplicationFiled: February 1, 2001Publication date: October 10, 2002Inventors: Hiroshi Inagaki, Shigeki Kawashima, Makoto Kamogawa, Toshire Kotooka, Toshiaki Saishoji, Daisuke Ebi, Kentarou Nakamura, Kengo Hayashi, Yoshinobu Hiraishi, Shigeo Morimoto, Hiroshi Monden, Tadayuki Hanamoto, Tadashi Hata