Abstract: A tape autoloading device includes a tape leading-end processing device, which forms the leading end of a carrier tape into a predetermined shape, and a transfer device, which carries the carrier tape in a first direction different from the tape longitudinal direction and transfers the carrier tape to the next step. Tape leading-end processing device includes a feeding device for conveying the carrier tape along a conveyance path formed in a groove in a guide member, a pressing device for pressing the upper surface of the carrier tape, and a cutting device for cutting the leading-end of the carrier tape. The transfer device includes a guide device for guiding the carrier tape having a leading end formed into a predetermined shape, a gripping device for gripping the leading end of the carrier tape, and a moving device for moving the carrier tape in the first direction.

Abstract: According to the present disclosure, a semiconductor apparatus comprises an insulating substrate. A porous material is directly bonded to the insulating substrate. And a semiconductor device is bonded to the porous material via a bonding material. The bonding material contains metal nanoparticles.

Abstract: An object of the present invention is to ascertain parts of an object that are approachable by finger portions of a hand mechanism. In an image information processing device, a housing container is retrieved from an image by using a first retrieval frame, and an object is retrieved from the image by using a second retrieval frame. A plurality of determination points are set in advance on the second retrieval frame, and a predetermined approach direction is set for each determination point. A determination is then made as to whether or not the finger portions of the hand mechanism can be caused to approach parts of one object, existing within the second retrieval frame, that correspond respectively to the determination points set on the second retrieval frame from the predetermined approach directions set in relation to the determination points.

Abstract: Object is to reduce the number of paths through which moisture enters in a semiconductor device. A semiconductor device includes a semiconductor element, a case housing the semiconductor element, a sealing material filled in the case, a low moisture permeable sheet covering the sealing material, and a lid covering an opening of the case. The low moisture permeable sheet is made of a low moisture permeable material having moisture permeability of 1 g/m2×24 Hr or less. The low moisture permeable sheet is interposed, at the peripheral edge thereof, between the case and the lid.

Abstract: An object of the present invention is to ascertain parts of an object that are approachable by finger portions of a hand mechanism. In an image information processing device, a housing container is retrieved from an image by using a first retrieval frame, and an object is retrieved from the image by using a second retrieval frame. A plurality of determination points are set in advance on the second retrieval frame, and a predetermined approach direction is set for each determination point. A determination is then made as to whether or not the finger portions of the hand mechanism can be caused to approach parts of one object, existing within the second retrieval frame, that correspond respectively to the determination points set on the second retrieval frame from the predetermined approach directions set in relation to the determination points.

Abstract: A composite material for vehicle interior, including: a skin material disposed at one outermost side of the composite material, and having a first principal surface and a second principal surface opposite the first principal surface; and a backing material disposed at the other outermost side of the composite material, so as to face the second principal surface of the skin material. The skin material is formed of a fiber structure body, and has a plurality of first fold lines of folding with the first principal surface of the skin material outward, and a plurality of second fold lines of folding with the first principal surface inward. The first fold lines adjacent to each other are parallel to each other or form an acute angle ?1 of 10° or less, the second fold lines adjacent to each other are parallel to each other or form an acute angle ?2 of 10° or less, and the first fold line and the second fold line adjacent to each other are parallel to each other or form an acute angle ?12 of 10° or less.

Abstract: A semiconductor device includes an electrode having a flat part and a non-flat part made up of a concave part, a joint layer being made of a sintered body of metal crystal grains provided on the flat part and the non-flat part of the electrode, and a semiconductor element being joined to the electrode with the joint layer therebetween, wherein the joint layer has a first region sandwiched between the non-flat part and the semiconductor element and a second region sandwiched between the flat part and the semiconductor element, and either one of the first region and the second region having a larger film thickness has a filling rate of the metal crystal grains smaller than the other one of the first region and the second region having a smaller film thickness. The present invention enhances reliability of a joint layer made of a sintered body of metal crystal grains.

Abstract: A composite material for vehicle interior, including: a skin material disposed at one outermost side of the composite material, and having a first principal surface and a second principal surface opposite the first principal surface; and a backing material disposed at the other outermost side of the composite material, so as to face the second principal surface of the skin material. The skin material is formed of a fiber structure body, and has a plurality of first fold lines of folding with the first principal surface of the skin material outward, and a plurality of second fold lines of folding with the first principal surface inward. The first fold lines adjacent to each other are parallel to each other or form an acute angle ?1 of 10° or less, the second fold lines adjacent to each other are parallel to each other or form an acute angle ?2 of 10° or less, and the first fold line and the second fold line adjacent to each other are parallel to each other or form an acute angle ?12 of 10° or less.

Abstract: A semiconductor device includes an electrode having a flat part and a non-flat part made up of a concave part, a joint layer being made of a sintered body of metal crystal grains provided on the flat part and the non-flat part of the electrode, and a semiconductor element being joined to the electrode with the joint layer therebetween, wherein the joint layer has a first region sandwiched between the non-flat part and the semiconductor element and a second region sandwiched between the flat part and the semiconductor element, and either one of the first region and the second region having a larger film thickness has a filling rate of the metal crystal grains smaller than the other one of the first region and the second region having a smaller film thickness. The present invention enhances reliability of a joint layer made of a sintered body of metal crystal grains.

Abstract: A semiconductor device includes an electrode having a flat part and a non-flat part made up of a concave part, a joint layer being made of a sintered body of metal crystal grains provided on the flat part and the non-flat part of the electrode, and a semiconductor element being joined to the electrode with the joint layer therebetween, wherein the joint layer has a first region sandwiched between the non-flat part and the semiconductor element and a second region sandwiched between the flat part and the semiconductor element, and either one of the first region and the second region having a larger film thickness has a filling rate of the metal crystal grains smaller than the other one of the first region and the second region having a smaller film thickness. The present invention enhances reliability of a joint layer made of a sintered body of metal crystal grains.

Abstract: A semiconductor device includes an electrode having a flat part and a non-flat part made up of a concave part, a joint layer being made of a sintered body of metal crystal grains provided on the flat part and the non-flat part of the electrode, and a semiconductor element being joined to the electrode with the joint layer therebetween, wherein the joint layer has a first region sandwiched between the non-flat part and the semiconductor element and a second region sandwiched between the flat part and the semiconductor element, and either one of the first region and the second region having a larger film thickness has a filling rate of the metal crystal grains smaller than the other one of the first region and the second region having a smaller film thickness. The present invention enhances reliability of a joint layer made of a sintered body of metal crystal grains.

Abstract: A method for manufacturing a semiconductor device according to the present invention includes: (a) disposing, on a substrate (insulating substrate), a bonding material having a sheet shape and having sinterability; (b) disposing a semiconductor element on the bonding material after the (a); and (c) sintering the bonding material while applying pressure to the bonding material between the substrate and the semiconductor element. The bonding material includes particles of Ag or Cu, and the particles are coated with an organic film.

Abstract: A method for manufacturing a semiconductor device according to the present invention includes: (a) disposing, on a substrate (insulating substrate), a bonding material having a sheet shape and having sinterability; (b) disposing a semiconductor element on the bonding material after the (a); and (c) sintering the bonding material while applying pressure to the bonding material between the substrate and the semiconductor clement. The bonding material includes particles of Ag or Cu, and the particles are coated with an organic film.