Patents by Inventor Daisuke Kimijima
Daisuke Kimijima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220157673Abstract: A semiconductor device includes a substrate having a first main surface on which a semiconductor chip is mounted, a case adhered to a peripheral edge of the substrate to form a recess in which the semiconductor chip is disposed, a cover disposed in the case with a first gap in a direction parallel to the first main surface between the cover and the case such that a second main surface of the cover faces the first main surface, and a first adhesive layer embedded in the first gap. The first adhesive layer has a first protruding portion and/or a second protruding portion, the first and second protruding portions respectively protruding outside and inside the recess from the first gap while being in contact with the inner walls of the case and respectively a third main surface of the cover opposite to the second main surface, and the second main surface.Type: ApplicationFiled: September 23, 2021Publication date: May 19, 2022Applicant: FUJI ELECTRIC CO., LTD.Inventor: Daisuke KIMIJIMA
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Patent number: 9590622Abstract: In a semiconductor module, second semiconductor chips (e.g., diodes) are disposed closer to a laminated substrate than first semiconductor chips (MOSFETs). When a control signal supplied to gate electrodes of the first semiconductor chips (MOSFETs) is off, an electric current produced by a voltage from source terminals to a drain board mainly flows through the second semiconductor chips.Type: GrantFiled: July 1, 2016Date of Patent: March 7, 2017Assignee: FUJI ELECTRIC CO., LTD.Inventors: Tetsuya Inaba, Yoshinari Ikeda, Katsumi Taniguchi, Daisuke Kimijima
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Publication number: 20170047923Abstract: In a semiconductor module, second semiconductor chips (e.g., diodes) are disposed closer to a laminated substrate than first semiconductor chips (MOSFETs). When a control signal supplied to gate electrodes of the first semiconductor chips (MOSFETs) is off, an electric current produced by a voltage from source terminals to a drain board mainly flows through the second semiconductor chips.Type: ApplicationFiled: July 1, 2016Publication date: February 16, 2017Applicant: FUJI ELECTRIC CO., LTD.Inventors: Tetsuya INABA, Yoshinari IKEDA, Katsumi TANIGUCHI, Daisuke KIMIJIMA
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Patent number: 9548253Abstract: A method of manufacturing a semiconductor device and a semiconductor device that is manufactured by the method. In the method of manufacturing a semiconductor device, a releasing sheet is disposed in close contact with a hole of an aluminum plate having the recessed hole, and a skeleton structure of a semiconductor device is put into the recessed hole. Then, liquid epoxy resin is poured into the recessed hole. After hardening, the epoxy resin body 10 including the skeleton structure is taken out from the recessed hole to complete manufacturing the semiconductor device. Using a simple molding jig including the aluminum plate, and covering the skeleton structure with the epoxy resin body, a highly reliable semiconductor device with a case-less construction can be manufactured.Type: GrantFiled: August 12, 2014Date of Patent: January 17, 2017Assignee: FUJI ELECTRIC CO., LTD.Inventors: Kei Yamaguchi, Yuji Ichimura, Daisuke Kimijima
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Patent number: 9524919Abstract: A semiconductor module includes a semiconductor element having a gate electrode and source electrode on the front surface, and a drain electrode on the rear surface, the drain electrode being electrically connected to the front surface of a drain plate; a laminated substrate having, on the front surface of an insulating plate, a first circuit plate to which the gate electrode is electrically connected, and a second circuit plate to which the source electrode is electrically connected, and which is disposed on the front surface of the drain plate; a gate terminal disposed on the first circuit plate; a source terminal disposed on the second circuit plate; and a cover disposed opposite to the front surface of the drain plate, and having an opening in which the gate terminal and the source terminal are positioned and a guide groove contacting the opening and extending to the outer peripheral portion.Type: GrantFiled: March 14, 2016Date of Patent: December 20, 2016Assignee: FUJI ELECTRIC CO., LTD.Inventors: Tetsuya Inaba, Yoshinari Ikeda, Motohito Hori, Daisuke Kimijima
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Publication number: 20160293517Abstract: A semiconductor module includes a semiconductor element having a gate electrode and source electrode on the front surface, and a drain electrode on the rear surface, the drain electrode being electrically connected to the front surface of a drain plate; a laminated substrate having, on the front surface of an insulating plate, a first circuit plate to which the gate electrode is electrically connected, and a second circuit plate to which the source electrode is electrically connected, and which is disposed on the front surface of the drain plate; a gate terminal disposed on the first circuit plate; a source terminal disposed on the second circuit plate; and a cover disposed opposite to the front surface of the drain plate, and having an opening in which the gate terminal and the source terminal are positioned and a guide groove contacting the opening and extending to the outer peripheral portion.Type: ApplicationFiled: March 14, 2016Publication date: October 6, 2016Inventors: Tetsuya INABA, Yoshinari IKEDA, Motohito HORI, Daisuke KIMIJIMA
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Patent number: 9123639Abstract: A power semiconductor module available under environments of high temperature has enhanced heat resistance of silicone gel filled up in a case. A power semiconductor module comprises a power semiconductor element, an insulating substrate mounted with the power semiconductor element, a resin case containing the power semiconductor element and the insulating substrate, a silicone gel injected into the resin case, and a sheet composed of a silicone rubber or silicone resin, disposed between the resin case and the silicone gel within the resin case.Type: GrantFiled: October 10, 2014Date of Patent: September 1, 2015Assignee: FUJI ELECTRIC CO., LTD.Inventors: Daisuke Kimijima, Yuji Ichimura
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Patent number: 9035446Abstract: Provided is a power module. The power module includes a power semiconductor chip. The power module further includes a case that accommodates the power semiconductor chip. A silicone gel seals the power semiconductor chip within the case. The silicone gel including a heat-resistant silicone gel containing 20 to 100 mass ppm of a metal complex comprising a metal selected from a group consisting of iron and platinum.Type: GrantFiled: April 25, 2014Date of Patent: May 19, 2015Assignee: Fuji Electric Co., Ltd.Inventors: Daisuke Kimijima, Yuji Ichimura
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Publication number: 20150115428Abstract: A power semiconductor module available under environments of high temperature has enhanced heat resistance of silicone gel filled up in a case. A power semiconductor module comprises a power semiconductor element, an insulating substrate mounted with the power semiconductor element, a resin case containing the power semiconductor element and the insulating substrate, a silicone gel injected into the resin case, and a sheet composed of a silicone rubber or silicone resin, disposed between the resin case and the silicone gel within the resin case.Type: ApplicationFiled: October 10, 2014Publication date: April 30, 2015Applicant: FUJI ELECTRIC CO., LTD.Inventors: Daisuke KIMIJIMA, Yuji ICHIMURA
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Publication number: 20150069601Abstract: A method of manufacturing a semiconductor device and a semiconductor device that is manufactured by the method. In the method of manufacturing a semiconductor device, a releasing sheet is disposed in close contact with a hole of an aluminum plate having the recessed hole, and a skeleton structure of a semiconductor device is put into the recessed hole. Then, liquid epoxy resin is poured into the recessed hole. After hardening, the epoxy resin body 10 including the skeleton structure is taken out from the recessed hole to complete manufacturing the semiconductor device. Using a simple molding jig including the aluminum plate, and covering the skeleton structure with the epoxy resin body, a highly reliable semiconductor device with a case-less construction can be manufactured.Type: ApplicationFiled: August 12, 2014Publication date: March 12, 2015Applicant: FUJI ELECTRIC CO., LTD.Inventors: Kei YAMAGUCHI, Yuji Ichimura, Daisuke Kimijima
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Publication number: 20140319669Abstract: Provided is a power module. The power module includes a power semiconductor chip. The power module further includes a case that accommodates the power semiconductor chip. A silicone gel seals the power semiconductor chip within the case. The silicone gel including a heat-resistant silicone gel containing 20 to 100 mass ppm of a metal complex comprising a metal selected from a group consisting of iron and platinum.Type: ApplicationFiled: April 25, 2014Publication date: October 30, 2014Applicant: FUJI ELECTRIC CO., LTD.Inventors: Daisuke KIMIJIMA, Yuji ICHIMURA
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Publication number: 20110303286Abstract: A solar cell module includes a metal plate, a solar cell that is fixed to the metal plate with sealing members interposed therebetween, and a surface protective film that covers the solar cell. A cutting process is performed on an outer portion of the solar cell, and the cut surface is covered with a non-solvent-based resin material. The solar cell module has a rectangular shape and the corners thereof are cut in an L-shape. Protruding piece portions formed by the cut-out portions are bent such that the solar cell module has a box shape.Type: ApplicationFiled: May 27, 2011Publication date: December 15, 2011Applicant: Fuji Electric Co., Ltd.Inventors: Hiroki Kogawa, Daisuke Kimijima