Abstract: A compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film used in manufacturing a semiconductor, where the compound for forming a metal-containing film is represented by the following general formula (M-1) or (M-2). This provides: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; a patterning process in which the composition is used as a resist underlayer film material; a patterning process in which the composition is used as a resist material; and a semiconductor photoresist material containing the composition.

Abstract: The present invention provides a composition for forming an adhesive film that provides an adhesive film that yields good pattern profiles and has high adhesion to a resist upper layer film to prevent collapse of fine patterns in a fine patterning process during semiconductor apparatus manufacturing processes, as well as a patterning process using the composition and a method for forming an adhesive film using the composition. As such, provided is a composition for forming an adhesive film directly under a resist upper layer film. The composition includes: (A) a polymer containing a repeating unit shown by the following general formula (1) and a repeating unit shown by the following general formula (2); and (B) an organic solvent.

Abstract: The present invention provides a pattern forming method using an adhesion film forming composition comprising (A) a polymer compound, (B) a thermal acid generator, and (C) an organic solvent includes steps of: (I-1) applying the adhesion film forming composition onto a substrate to be processed and thereafter performing thermal treatment to form an adhesion film; (I-2) forming a resist upper layer film on the adhesion film using a resist upper layer film forming composition; (I-3) performing pattern exposure on the resist upper layer film and thereafter developing the resist upper layer film with a developer to form a circuit pattern on the resist upper layer film; and (I-4) transferring a pattern to the adhesion film and the substrate to be processed by dry etching with the resist upper layer film on which the circuit pattern is formed as a mask.

Abstract: A composition for forming a silicon-containing resist underlayer film contains a compound shown by the following general formula (A-1) and a thermally crosslinkable polysiloxane. R1 represents a methyl group, an ethyl group, a propyl group, an allyl group, or a propargyl group. R2 represents a hydrogen atom, an acetyl group, an acryloyl group, a methacryloyl group, a benzoyl group, a naphthoyl group, or an anthranoyl group. R3 represents a methyl group, an ethyl group, a propyl group, an allyl group, a propargyl group, or a group shown by the following general formula (A-2), where a broken line represents a bonding arm, and R1 and R2 are as defined above. An object of the present invention is to provide a silicon-containing resist underlayer film capable of exhibiting high effect of suppressing ultrafine pattern collapse and forming a resist pattern with favorable pattern profile in multilayer resist methods.

Abstract: A material for forming an organic film, including: a compound for forming an organic film shown by the following general formula (1A); and an organic solvent, where W1 represents a tetravalent organic group, n1 an integer of 0 or 1, n2 an integer of 1 to 3, and R1 an alkynyl group having 2 to 10 carbon atoms. A compound for forming an organic film is cured not only under air, but also under film formation conditions of inert gas, and forms an organic film having not only excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but also favorable adhesion to a substrate, and a material for forming an organic film containing the compound, and a substrate for manufacturing a semiconductor device using the material, a method for forming an organic film using the material, and a patterning process using the material.

Abstract: The present invention is a composition for forming a metal oxide film including (A) an organic-inorganic composite material and (B) a solvent, (A) the organic-inorganic composite material being a reaction product of a metal source (I) and an organic source (II), the metal source (I) containing one or more compounds derived from a metal compound represented by the general formula (I-1), and the organic source (II) containing a compound having a unit represented by the general formula (II-1) and a cardo structure. The present invention provides a composition for forming a metal oxide film which has excellent coatability relative to a previously-known material for forming a metal oxide film and also has high filling and planarizing properties, a patterning process using the material, and a method for forming a metal oxide film.

Abstract: A material for forming an organic film, including: a polymer having a structure shown by the following general formula (1A) as a partial structure; and an organic solvent, where in the general formula (1A), W1 represents a tetravalent organic group, W2 represents a single bond or a linking group shown by the following formula (1B), R1 represents a hydrogen atom or a monovalent organic group having 1 to 10 carbon atoms, n1 represents an integer of 0 or 1, and n2 and n3 satisfy 0?n2?6,0?n3?6, and 1?n2+n3?6, and where R2 and R3 each independently represent hydrogen or an organic group having 1 to 30 carbon atoms, and the organic group R2 and the organic group R3 optionally bond to each other within a molecule to form a cyclic organic group.

Abstract: The present invention is a resist underlayer film material, including: (A) a compound or resin having a phenolic hydroxy group; (B) a base generator; and (C) an organic solvent. By the above configuration, the present invention provides: a resist underlayer film material that can form a resist underlayer film having excellent planarizing ability and film formability even on a substrate to be processed having a portion with particular difficulty in planarization, such as a wide trench structure, and that yields a resist underlayer film having an appropriate etching characteristic in a fine patterning process with a multilayer resist method in a semiconductor apparatus manufacturing process; and a patterning process and method for forming a resist underlayer film using the above material.

Abstract: The present invention is a material for forming an organic film, including: a compound shown by the following general formula (1); and an organic solvent, where in the general formula (1), X represents an organic group with a valency of “n” having 2 to 50 carbon atoms or an oxygen atom, “n” represents an integer of 1 to 10, and R1 independently represents any of the following general formulae (2), where in the general formulae (2), broken lines represent attachment points to X, and Q1 represents a monovalent organic group containing a carbonyl group, at least a part of which is a group shown by the following general formulae (3), where in the general formulae (3), broken lines represent attachment points, X1 represents a single bond or a divalent organic group having 1 to 20 carbon atoms optionally having a substituent when the organic group has an aromatic ring, R2 represents a hydrogen atom, a methyl group, an ethyl group, or a phenyl group, and ** represents an attachment point.

Abstract: A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A) as a repeating unit, and an organic solvent, where AR1 and AR2 each represent a benzene ring or a naphthalene ring which optionally have a substituent; each R represents a hydrogen atom or a monovalent organic group having 2 to 10 carbon atoms and an unsaturated bond; R? represents a single bond or W1; and W1 represents a divalent organic group having 6 to 80 carbon atoms and one or more aromatic rings. This invention provides: a composition for forming an organic film, the composition containing a polymer having an indenofluorene structure with high carbon content and thermosetting property as to enable high etching resistance and excellent twisting resistance; a patterning process using this composition; and a polymer for providing such a composition for forming an organic film.

Abstract: The present invention is a composition for forming a metal oxide film, comprising (A) a metal oxide nanoparticle, (B) a flowability accelerator, which is a compound and/or a polymer having a molecular weight of 5000 or less represented by one or more selected from the following general formulae (I), (II) and (III), and (C) an organic solvent, wherein a weight ratio of the (A) metal oxide nanoparticle to the (B) flowability accelerator is 10/90 to 90/10. This makes it possible to provide a composition for forming a metal oxide film having excellent dry etching resistance relative to a previously-known organic underlayer film composition and also has high filling and planarizing properties, a patterning process using the composition, and a method for forming a metal oxide film (resist underlayer film).

Abstract: A composition for forming an organic film, including: a compound represented by the following general formula (1); and an organic solvent, wherein in the general formula (1), X represents any one group of X1 to X3 represented by the following general formulae (2), (3), and (5), and two or more kinds of X are optionally used in combination, wherein in the general formula (3), W represents a carbon atom or a nitrogen atom; “n1” represents 0 or 1; “n2” represents an integer of 1 to 3; and R1 independently represents any one of groups represented by the following general formula (4), and wherein in the general formula (5), R2 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and R3 represents any one of the following groups.

Abstract: Provided is a composition for forming a protective film using a polymer having an imide group: that is cured under a film-forming condition not only in the air but in an inert gas; that can form a protective film having excellent heat resistance, embedding and planarization ability for a pattern formed on a substrate, and good adhesiveness to the substrate; and that can form a protective film having excellent resistance against an alkaline aqueous hydrogen peroxide.

Abstract: The present invention provides a material for forming an organic film, containing a compound shown by the following general formula (1), and an organic solvent, where X represents an organic group having a valency of n1 and 2 to 50 carbon atoms, n1 represents an integer of 1 to 10, and R1 represents at least one or more of the following general formulae (2) to (4). This aims to provide an organic film material for forming an organic film that has all of high filling property, high planarizing property, and excellent adhesive force to a substrate.

Abstract: A composition for forming an organic film, containing: a material for forming an organic film shown by the following general formula; and an organic solvent, where R1 represents a hydrogen atom, an allyl group, or a propargyl group, R2 represents a nitro group, a halogen atom, a hydroxy group, an alkyloxy group having 1 to 4 carbon atoms, an alkynyloxy group having 2 to 4 carbon atoms, an alkenyloxy group having 2 to 4 carbon atoms, a linear, branched, or cyclic alkyl group having 1 to 6 carbon atoms, a trifluoromethyl group, or a trifluoromethyloxy group, m = 0 or 1, n = 1 or 2, 1 = 0 or 1, k represents an integer of 0 to 2, W represents a divalent organic group having 1 to 40 carbon atoms, and each V independently represents a hydrogen atom or a linking moiety.

Abstract: A composition for forming an organic film contains a polymer having a repeating unit shown by formula (1A) as a partial structure, and an organic solvent, where AR1 and AR2 represent a benzene ring or naphthalene ring optionally with a substituent; W1 represents any in formula (1B), and the polymer optionally contains two or more kinds of W1; W2 represents a divalent organic group having 1 to 80 carbon atoms; R1 represents a monovalent organic group having 1 to 10 carbon atoms and an unsaturated bond; and R2 represents a monovalent organic group having 6 to 20 carbon atoms and one or more aromatic rings. This invention provides: an organic film composition which enables excellent film formability, high etching resistance, and excellent twisting resistance without impairing the resin-derived carbon content, and which contains less outgassing-causing sublimation component; a patterning process using the composition; and a polymer suitable for the composition.

Abstract: An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air, generates no by-product and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate.

Abstract: A material for forming an organic film contains a polymer having a repeating unit shown by the following general formula (1), and an organic solvent, where AR1 and AR2 each represent a benzene ring or a naphthalene ring which optionally have a substituent; W1 represents a divalent organic group having 2 to 20 carbon atoms and no aromatic ring, and a methylene group constituting the organic group is optionally substituted with an oxygen atom or a carbonyl group; and W2 represents a divalent organic group having 6 to 80 carbon atoms and at least one or more aromatic rings. This invention provides: an organic film material being excellent in film formability and enabling high etching resistance and excellent twisting resistance and filling property; a patterning process using this material; and a polymer suitable for such an organic film material.

Abstract: A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A) or (1B), and an organic solvent, where Ar1 and Ar2 represent a benzene ring or naphthalene ring which optionally have a substituent; X represents a single bond or methylene group; a broken line represents a bonding arm; R represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and W1 represents a hydroxyl group, an alkyloxy group having 1 to 10 carbon atoms, or an organic group having at least one aromatic ring optionally having a substituent. A composition for forming an organic film, the composition containing a polymer with high carbon content and thermosetting property as to enable high etching resistance and excellent twisting resistance; a patterning process using the composition; and a polymer suitable for the composition for forming an organic film.

Abstract: A material for forming an organic film using a polymer including an imide group for forming an organic underlayer film that cures under film-forming conditions in the air and in an inert gas, generates no by-product in heat resistance and embedding and flattening characteristics of a pattern formed on a substrate, also adhesiveness to a substrate for manufacturing a semiconductor apparatus, a method for forming an organic film, and a patterning process. The material includes (A) a polymer having a repeating unit represented by the following general formula (1A) whose terminal group is a group represented by either of the following general formulae (1B) or (1C), and (B) an organic solvent: wherein, W1 represents a tetravalent organic group, and W2 represents a divalent organic group: wherein, R1 represents any of the groups represented by the following formula (1D), and two or more of R1s may be used in combination.