Abstract: A thermosetting resin sheet for sealing an electronic component, that is excellent in adhesiveness, onto the electric component; a resin-sealed type semiconductor device high in reliability; and a method for producing the device are provided. The present invention relates to a thermosetting resin sheet for sealing an electronic component, comprising one or more resin components, one of the components being allowable to be a thermoplastic resin, and having a content by percentage of the thermoplastic resin of 30% or less by weight of all of the entire resin components.

Abstract: An electromagnetic wave shielding layer can be provided on the backside of a semiconductor element that is flip-chip connected to an adherend, and a semiconductor device having the electromagnetic wave shielding layer can be manufactured without deteriorating productivity. The present invention provides a film for the backside of a flip-chip type semiconductor to be formed on the backside of a semiconductor element that is flip-chip connected to an adherend, having an adhesive layer and an electromagnetic wave shielding layer.

Abstract: In order to provide a thermally-detachable sheet that detaches at higher temperatures, this thermally-detachable sheet has a shear bond strength with respect to a silicon wafer of 0.25 kg/5×5 mm or larger, at a temperature of 200° C., after said temperature has been maintained for one minute, and a shear bond strength with respect to a silicon wafer of 0.25 kg/less than 5×5 mm at any temperature in a range of over 200° C. to not more than 500° C., after said temperature has been maintained for three minutes.

Abstract: An object of the invention is to prevent staining of processing equipment by a resin originated from a resin sheet during pressing. The present invention achieves the object by a laminate having a support, a resin sheet that is laminated on a part of the support, and a release sheet that is laminated on the resin sheet, in which a peel force F1 between the support and the resin sheet is larger than a peel force F2 between the resin sheet and the release sheet.

Abstract: A cleaning sheet comprising a cleaning layer and a releasable protective film laminated on the cleaning layer, wherein each of the relative intensities of the fragment ions Of CH3Si+, C3H9Si+, C5H15Si2O+, C5H15Si3O3+, CH3SiO?, CH3SiO2? and Si+ in the cleaning layer, when the protective film is peeled off the cleaning layer, is 0.1 or less according to time-of-flight secondary ion mass spectrometry, relative to C2H3+ in the case of positive ion or O? in the case of negative ion.

Abstract: A cleaning sheet comprising a cleaning layer and a releasable protective film laminated on the cleaning layer, wherein each of the relative intensities of the fragment ions of CH3Si+, C3H9Si+, C5H15Si2O+, C5H15Si3O3+, C7H21Si3O2+, CH3SiO?, CH3SiO2? and Si+ in the cleaning layer, when the protective film is peeled off the cleaning layer, is 0.1 or less according to time-of-flight secondary ion mass spectrometry, relative to C2H3+ in the case of positive ion or O? in the case of negative ion.

Abstract: A thermosetting resin sheet for sealing an electronic component, that is excellent in adhesiveness, onto the electric component; a resin-sealed type semiconductor device high in reliability; and a method for producing the device are provided. The present invention relates to a thermosetting resin sheet for sealing an electronic component, comprising one or more resin components, one of the components being allowable to be a thermoplastic resin, and having a content by percentage of the thermoplastic resin of 30% or less by weight of all of the entire resin components.

Abstract: A method of manufacturing a semiconductor element is provided. The method includes the steps of: bonding a substrate for transferring and a functional layer that is formed on a substrate for forming a functional layer with a temporary fixing layer interposed therebetween; removing the substrate for forming a functional layer to expose the functional layer; bonding a final substrate to the exposed functional layer; and separating the temporary fixing layer and the substrate for transferring from the functional layer, wherein the temporary fixing layer has (A) a specific shear adhering strength or has (B) a specific weight loss rate.

Abstract: A method of manufacturing an LED according to an embodiment of the present invention includes back-grinding a substrate of an LED wafer including a light emitting element and the substrate, where the back-grinding includes fixing the LED wafer to a table via a double-sided pressure-sensitive adhesive sheet, and then grinding the substrate.

Abstract: A method of manufacturing an LED according to an embodiment of the present invention includes: forming a reflective layer on an outer side of a substrate of an LED wafer including the substrate and a light emitting element on one surface of the substrate; and attaching, prior to the forming a reflective layer, a heat-resistant pressure-sensitive adhesive sheet onto an outer side of the light emitting element.

Abstract: A method of manufacturing an LED according to an embodiment of the present invention includes: back-grinding a substrate of an LED wafer including the substrate and a light emitting element formed on one surface of the substrate; forming, after the back-grinding, a reflective layer on an outer side of the substrate; and attaching, on an outer side of the light emitting element of the LED wafer, a heat-resistant pressure-sensitive adhesive sheet.

Abstract: A method of manufacturing an LED including: back-grinding a substrate of an LED wafer including a light emitting element and the substrate; and attaching a protective sheet to the LED wafer one of prior to the back-grinding and after grinding the substrate in the back-grinding.

Abstract: A cleaning sheet including a cleaning layer which has a microasperity shape having an arithmetic average roughness Ra of 0.05 ?m or less and a maximum height Rz of 1.0 ?m or less. Preferably, a substantial surface area of the cleaning layer per a flat surface of 1 mm2 is 150% or more of a substantial surface area of a silicon wafer mirror surface per a flat area of 1 mm2. The cleaning sheet may be provided on at least one surface of a transfer member so that the transfer member has a cleaning function. When the cleaning sheet or the transfer member having a cleaning function is transferred in a substrate processing apparatus in place of a substrate to be processed therein, the cleaning sheet contacts and cleans a site of the substrate processing apparatus.

Abstract: A cleaning sheet including a cleaning layer which has a microasperity shape having an arithmetic average roughness Ra of 0.05 ?m or less and a maximum height Rz of 1.0 ?m or less. Preferably, a substantial surface area of the cleaning layer per a flat surface of 1 mm2 is 150% or more of a substantial surface area of a silicon wafer mirror surface per a flat area of 1 mm2. The cleaning sheet may be provided on at least one surface of a transfer member so that the transfer member has a cleaning function. When the cleaning sheet or the transfer member having a cleaning function is transferred in a substrate processing apparatus in place of a substrate to be processed therein, the cleaning sheet contacts and cleans a site of the substrate processing apparatus.

Abstract: Provided is a cleaning unit for removing foreign matter adhering to a probe needle of a probe card for a continuity test, the cleaning unit being capable of effectively removing the foreign matter adhering to the probe needle without abrading the probe needle. A cleaning sheet of the present invention is a cleaning sheet, including a cleaning layer for removing foreign matter adhering to a probe needle of a probe card for a continuity test, in which the cleaning layer has an arithmetic average roughness Ra in conformity with JIS-B-0601 of 100 nm or less.

Abstract: An electromagnetic wave shielding layer can be provided on the backside of a semiconductor element that is flip-chip connected to an adherend, and a semiconductor device having the electromagnetic wave shielding layer can be manufactured without deteriorating productivity. The present invention provides a film for the backside of a flip-chip type semiconductor to be formed on the backside of a semiconductor element that is flip-chip connected to an adherend, having an adhesive layer and an electromagnetic wave shielding layer.

Abstract: An object of the present invention is to decrease the influence of an electromagnetic wave emitted from one semiconductor chip on other semiconductor chips in the same package, amounted substrate, adjacent devices, and the package. The present invention provides an adhesive film for a semiconductor device having an adhesive layer and an electromagnetic wave shielding layer, in which the attenuation of the electromagnetic wave that penetrates the adhesive film for a semiconductor device is 3 dB or more in at least a portion of the frequency range of 50 MHz to 20 GHz.

Abstract: A semiconductor device having an electromagnetic wave shielding layer can be manufactured without decreasing productivity. The present invention provides a die bond film including an adhesive layer and an electromagnetic wave shielding layer made of a metal foil or a die bond film including an adhesive layer and an electromagnetic wave shielding layer formed by vapor deposition.

Abstract: Provided are a cleaning sheet and a transfer member provided with a cleaning function, which are excellent in foreign matter removing performance and transfer performance and which are capable of removing foreign matters each having a predetermined particle diameter particularly efficiently. The cleaning sheet of the present invention includes a cleaning layer substantially free of an adhesive ability, in which: the cleaning layer has an uneven portion having an average surface roughness Ra of 0.10 ?m or more; and the cleaning layer has a 180° peeling adhesion of less than 0.20 N/10 mm, which is defined by JIS-Z-0237 with respect to a mirror surface of a silicon wafer. The transfer member provided with a cleaning function of the present invention includes a transfer member and the cleaning layer of the present invention provided on at least one surface of the transfer member.

Abstract: A cleaning sheet including a cleaning layer which has a microasperity shape having an arithmetic average roughness Ra of 0.05 ?m or less and a maximum height Rz of 1.0 ?m or less. Preferably, a substantial surface area of the cleaning layer per a flat surface of 1 mm2 is 150% or more of a substantial surface area of a silicon wafer mirror surface per a flat area of 1 mm2. The cleaning sheet may be provided on at least one surface of a transfer member so that the transfer member has a cleaning function. When the cleaning sheet or the transfer member having a cleaning function is transferred in a substrate processing apparatus in place of a substrate to be processed therein, the cleaning sheet contacts and cleans a site of the substrate processing apparatus.