Abstract: A component of a process chamber is refurbished and cleaned to remove an intermetallic compound from the component. The component has a structure having a coating that includes a first metal layer over the intermetallic compound. To refurbish the component, the first metal layer is removed to form an exposed surface that at least partially includes the intermetallic compound. The exposed surface is bead blasted in a penetrative bead blasting step by propelling blasting beads having a bead diameter of less than about 180 micrometers with a gas that is pressurized to a pressure of less than about 310 kPa (45 psi), towards the exposed surface, thereby removing the intermetallic compound from the exposed surface of the structure to form a cleaned surface. A second metal layer is then formed over the cleaned surface.

Abstract: A substrate processing chamber component is capable of being exposed to an energized gas in a process chamber. The component has an underlying structure and first and second coating layers, the first coating layer comprising a first material having a first thermal expansion coefficient and a first surface having an average surface roughness of less than about 25 micrometers. The second coating layer is over the first surface of the first coating layer, the second coating layer comprising a second material having a second thermal expansion coefficient that differs by less than 5% from the first thermal expansion coefficient of the first material and a second surface having an average surface roughness of at least about 50 micrometers.

Abstract: A substrate processing chamber component is capable of being exposed to an energized gas in a process chamber. The component has an underlying structure and first and second coating layers. The first coating layer is formed over the underlying structure, and has a first surface with an average surface roughness of less than about 25 micrometers. The second coating layer is formed over the first coating layer, and has a second surface with an average surface roughness of at least about 50 micrometers. Process residues can adhere to the surface of the second coating layer to reduce the contamination of processed substrates.

Abstract: A substrate processing chamber component is capable of being exposed to an energized gas in a process chamber. The component has an underlying structure and first and second coating layers. The first coating layer is formed over the underlying structure, and has a first surface with an average surface roughness of less than about 25 micrometers. The second coating layer is formed over the first coating layer, and has a second surface with an average surface roughness of at least about 50 micrometers. Process residues can adhere to the surface of the second coating layer to reduce the contamination of processed substrates.

Abstract: A component of a process chamber is cleaned and refurbished. The component has a structure with an overlying coating having of a first layer. To refurbish the component, the first layer is removed to form an exposed surface on the structure. During or after the removal of the coating, the exposed surface is cleaned with a cleaning fluid, which deposits cleaning residue on the exposed surface. The exposed surface is heated in a substantially non-oxidizing atmosphere to a temperature that is sufficiently high to vaporize the cleaning residue from the surface, thereby forming a cleaned surface. A second layer is formed over the cleaned surface.

Abstract: A component of a process chamber is refurbished and cleaned to remove an intermetallic compound from the component. The component has a structure having a coating that includes a first metal layer over the intermetallic compound. To refurbish the component, the first metal layer is removed to form an exposed surface that at least partially includes the intermetallic compound. The exposed surface is bead blasted in a penetrative bead blasting step by propelling blasting beads having a bead diameter of less than about 180 micrometers with a gas that is pressurized to a pressure of less than about 310 kPa (45 psi), towards the exposed surface, thereby removing the intermetallic compound from the exposed surface of the structure to form a cleaned surface. A second metal layer is then formed over the cleaned surface.

Abstract: The present invention provides a method of manufacturing a lightly doped drain (LDD) structure using a polymer layer to define the LDD. The polymer layer is formed in an etch step which defines the gate electrode. The method begins by forming spaced field oxide regions 12 in a substrate 10. Next, a gate oxide layer 14, and a material layer 18 and a hard mask layer 22 are sequentially formed over the active area and the field oxide regions 12. A photo resist block 24 is formed over the hard mask layer 22 over the active area. The hard mask layer 22 is etched using the photo resist block 24 as a mask forming a hard mask block 22. The etch simultaneously forms a polymer layer 26 over the a top and sidewalls of the photo resist block 24 and over the sidewalls of the hard mask block. Impurities ions are implanted into the substrate in the active area using the polymer layer 26 as a mask forming highly doped drain regions 30 in the substrate 10. Next, the photo resist block 24 and the polymer layer 26 are removed.