Abstract: Semiconductor devices and methods for forming semiconductor devices include opening at least one contact via through a sacrificial material down to contacts. Sides of the at least one contact via are lined by selectively depositing a barrier on the sacrificial material, the barrier extending along sidewalls of the at least one contact via from a top surface of the sacrificial material down to a bottom surface of the sacrificial material proximal to the contacts such that the contacts remain exposed. A conductive material is deposited in the at least one contact via down to the contacts to form stacked contacts having the hard mask on sides thereof. The sacrificial material is removed.

Abstract: A physical unclonable function (PUF) device includes a ring oscillator, a plurality of band-pass filters, a demultiplexer, and a latch. The ring oscillator generates a frequency signal. Each passive band-pass filter performs filtering on the frequency signal to pass the frequency signal or block the frequency signal. The demultiplexer receives a set of challenge bits and delivers the frequency signal to a selected passive band-pass filter among the plurality of passive band-passed filters based on the challenge bit. The latch outputs a response bit in response to the filtering performed by the selected passive band-pass filter.

Abstract: Semiconductor devices and methods for forming semiconductor devices include opening at least one contact via through a sacrificial material down to contacts. Sides of the at least one contact via are lined by selectively depositing a barrier on the sacrificial material, the barrier extending along sidewalls of the at least one contact via from a top surface of the sacrificial material down to a bottom surface of the sacrificial material proximal to the contacts such that the contacts remain exposed. A conductive material is deposited in the at least one contact via down to the contacts to form stacked contacts having the hard mask on sides thereof. The sacrificial material is removed.

Abstract: Embodiments of the present invention are directed to techniques for providing a gate cut critical dimension (CD) shrink and active gate defect healing using selective deposition. The selective silicon on silicon deposition described herein effectively shrinks the gate cut CD to below lithographic limits and repairs any neighboring active gate damage resulting from a processing window misalignment by refilling the inadvertently removed sacrificial material. In a non-limiting embodiment of the invention, a sacrificial gate is formed over a shallow trench isolation region. A portion of the sacrificial gate is removed to expose a surface of the shallow trench isolation region. A semiconductor material is selectively deposited on exposed sidewalls of the sacrificial gate. A gate cut dielectric is formed on a portion of the shallow trench isolation between sidewalls of the semiconductor material.

Abstract: Semiconductor devices and methods for forming semiconductor devices include opening at least one contact via through a sacrificial material down to contacts. Sides of the at least one contact via are lined by selectively depositing a barrier on the sacrificial material, the barrier extending along sidewalls of the at least one contact via from a top surface of the sacrificial material down to a bottom surface of the sacrificial material proximal to the contacts such that the contacts remain exposed. A conductive material is deposited in the at least one contact via down to the contacts to form stacked contacts having the hard mask on sides thereof. The sacrificial material is removed.

Abstract: Semiconductor devices and methods for forming semiconductor devices include opening at least one contact via through a sacrificial material down to contacts. Sides of the at least one contact via are lined by selectively depositing a barrier on the sacrificial material, the barrier extending along sidewalls of the at least one contact via from a top surface of the sacrificial material down to a bottom surface of the sacrificial material proximal to the contacts such that the contacts remain exposed. A conductive material is deposited in the at least one contact via down to the contacts to form stacked contacts having the hard mask on sides thereof. The sacrificial material is removed.

Abstract: Embodiments of the present invention are directed to techniques for providing a gate cut critical dimension (CD) shrink and active gate defect healing using selective deposition. The selective silicon on silicon deposition described herein effectively shrinks the gate cut CD to below lithographic limits and repairs any neighboring active gate damage resulting from a processing window misalignment by refilling the inadvertently removed sacrificial material. In a non-limiting embodiment of the invention, a sacrificial gate is formed over a shallow trench isolation region. A portion of the sacrificial gate is removed to expose a surface of the shallow trench isolation region. A semiconductor material is selectively deposited on exposed sidewalls of the sacrificial gate. A gate cut dielectric is formed on a portion of the shallow trench isolation between sidewalls of the semiconductor material.

Abstract: The present invention provides a method of treating groundwater or other water stream(s) contaminated with an oxygenate to degrade said oxygenate which comprises: a) inoculating a biodegrader capable of degrading said oxygenate on a packed activated carbon bed through a rigid tubular instrument having a plurality of holes in the part of the rigid tubular instrument used for inoculation of the carbon bed; and b) flowing said groundwater, or other water stream contaminated with said oxygenate through a structure having a top, bottom and sides and a predetermined volume containing said bed of activated carbon having said biodegrader inoculated thereon. and an apparatus for the same. The method is particularly effective for treating water contaminated with methyl t-butyl ether (MTBE) and/or t-butyl alcohol (TBA).

Abstract: The present invention provides a method of treating groundwater or other water stream(s) contaminated with an oxygenate to degrade said oxygenate which comprises:

Abstract: Disclosed is a method for treating groundwater, or other water streams contaminated with oxygenate(s), particularly MTBE and TBA, characterized by improved biodegradation of MTBE, the biodegradation of TBA, and reduced frequency of the need to change the carbon bed, which comprises inoculating a biodegrader capable of degrading said oxygenate on an activated carbon bed through a rigid tubular instrument having a plurality of holes around the circumference of the end used for inoculation of the carbon bed by a method that optimizes dispersion and colonization; and flowing said groundwater, or other water stream contaminated with said oxygenate through a structure having a top, bottom and sides and a predetermined volume containing said bed of activated carbon having said biodegrader inoculated thereon. The invention is also an apparatus for biodegradation of oxygenate(s).